FJP9100
FJP9100
High Voltage Power Darlington Transistor
• Built-in Resistor at Base-Emitter : R
1
(Typ.)=2000
Ω
• Built-in Resistor at Base : R
B
(Typ.)=700
±
100Ω
1
1.Base
TO-220
2.Collector
3.Emitter
NPN Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Value
600
275
10
4
6
0.5
40
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
°C
°C
R
1
B
R
B
Equivalent Circuit
C
R
1
≅
2000Ω
R B
≅
700Ω
E
* Pulse Test: PW=300µs, duty Cycle=2% Pulsed
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CER
BV
CEO
(sus)
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
C
ob
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Sustaining Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Test Condition
I
C
= 500µA, I
E
= 0
I
C
= 1mA, R
BE
= 330
Ω
I
C
= 1.5A, I
B
= 50mA, L=25mH
I
E
= 500µA, I
C
= 0
V
CB
= 600V, I
E
= 0
V
EB
= 10V, I
C
= 0
V
CE
= 5V, I
C
= 0.5A
V
CE
= 5V, I
C
= 3A
I
C
= 2A, I
B
= 5mA
I
C
= 2A, I
B
= 5mA
V
CB
= 10V, I
E
= 0, f=1MHz
110
1000
1000
Min.
600
600
275
10
0.1
0.1
5000
1.5
6.0
V
V
pF
Typ.
Max.
Units
V
V
V
V
mA
mA
©2003 Fairchild Semiconductor Corporation
Rev. A, May 2003
FJP9100
Typical Characteristics
5
10k
I
B
= 1.4mA
Ta = 75 C
Ta = 125 C
o
o
I
C
[A], COLLECTOR CURRENT
4
DC CURRENT GAIN
1k
3
Ta = 25 C
Ta = - 25 C
o
o
I
B
= 0.6mA
2
I
B
= 0.4mA
100
1
I
B
= 0
0
0
1
2
3
4
5
6
7
10
0.1
V
CE
= 5V
1
10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characterstic
Figure 2. DC current Gain
100
100
V
CE
(sat) [V], SATURATION VOLTAGE
I
C
= 400 I
B
I
C
= 400 I
B
Ta = 125 C
10
o
V
BE
(sat), SATURATION VOLTAGE
10
Ta = 75 C
o
Ta = 125 C
Ta = 75 C
1
o
o
1
Ta = 25 C
o
o
Ta = 25 C
Ta = - 25 C
o
o
Ta = - 25 C
0.1
0.1
1
10
0.1
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
10k
1000
f = 1MHz, I
E
= 0
R
1
1k
Cob [pF], OUPUT CAPACITANCE
150
R
B
& R
1
[
Ω
], RESISTANCE
100
R
B
100
-50
-25
0
o
25
50
75
100
125
10
1
10
100
T
A
[ C], ABBIENT TEMPERATURE
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 5. R
B
& R
1
vs. Ambient Temperature
Figure 6. Output Capacitance
©2003 Fairchild Semiconductor Corporation
Rev. A, May 2003
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2003 Fairchild Semiconductor Corporation
Rev. I2
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