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FLM1314-12F

Description
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size118KB,4 Pages
ManufacturerFUJITSU
Websitehttp://edevice.fujitsu.com/fmd/en/index.html
Download Datasheet Parametric View All

FLM1314-12F Overview

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 3 PIN

FLM1314-12F Parametric

Parameter NameAttribute value
MakerFUJITSU
package instructionFLANGE MOUNT, R-CDFM-F2
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage15 V
Maximum drain current (ID)5 A
FET technologyJUNCTION
highest frequency bandKU BAND
JESD-30 codeR-CDFM-F2
Number of components1
Number of terminals2
Operating modeDEPLETION MODE
Maximum operating temperature175 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment75 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsGALLIUM ARSENIDE
Base Number Matches1
FLM1314-12F
X, Ku-Band Internally Matched FET
FEATURES
High Output Power: P1dB = 41.0dBm (Typ.)
High Gain: G1dB = 6.0dB (Typ.)
High PAE:
η
add = 23% (Typ.)
Low IM3 = -45dBc@Po = 29.0dBm
Broad Band: 13.75 ~ 14.5GHz
Impedance Matched Zin/Zout = 50Ω
Hermetically Sealed
DESCRIPTION
The FLM1314-12F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
PT
Tstg
Tch
Tc = 25°C
Condition
Rating
15
-5
75
-65 to +175
175
Unit
V
V
W
°C
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 48.0 and -6.6 mA respectively with
gate resistance of 50Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Gain Flatness
3rd Order Intermodulation
Distortion
Thermal Resistance
Channel Temperature Rise
CASE STYLE: IB
Symbol
IDSS
gm
Vp
VGSO
P1dB
G1dB
Idsr
η
add
∆G
IM3
Rth
∆T
ch
f = 14.5GHz,
∆f
= 10 MHz
2-Tone Test
Pout = 29.0dBm S.C.L.
Channel to Case
10V x Idsr x Rth
VDS =10V,
IDS = 0.65 IDSS (Typ.),
f = 13.75 ~ 14.5 GHz,
ZS = ZL= 50 ohm
Test Conditions
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 4200mA
VDS = 5V, IDS = 335mA
IGS = -335µA
Min.
-
-
-0.5
-5.0
40.5
5.0
-
-
-
-42
-
-
Limit
Typ. Max.
6.7
6700
-1.5
-
41.0
6.0
10
-
-3.0
-
-
-
Unit
A
mS
V
V
dBm
dB
mA
%
dB
dBc
°C/W
°C
4200 5000
23
-
-45
1.8
-
-
±0.6
-
2.0
80
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.0
September 2001
1
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