MSD75-08 datasheet, PDF - EEWORLD Datasheet

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MSD75-08: DescriptionBridge Rectifier Diode, 3 Phase, 75A, 800V V(RRM), Silicon, CASE M2, 5 PIN; CategoryDiscrete semiconductor diode; File Size148KB，3 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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MSD75-08 Overview

Bridge Rectifier Diode, 3 Phase, 75A, 800V V(RRM), Silicon, CASE M2, 5 PIN

MSD75-08 Parametric

Parameter Name	Attribute value
Objectid	2102648419
package instruction	CASE M2, 5 PIN
Contacts	5
Manufacturer packaging code	CASE M2
Reach Compliance Code	compliant
ECCN code	EAR99
Minimum breakdown voltage	800 V
Configuration	BRIDGE, 6 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.6 V
JESD-30 code	R-XUFM-X5
Maximum non-repetitive peak forward current	750 A
Number of components	6
Phase	3
Number of terminals	5
Maximum operating temperature	150 °C
Minimum operating temperature	-40 °C
Maximum output current	75 A
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	800 V
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER

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MSD75

Glass Passivated Three

Phase Rectifier Bridge

V

RRM

800 to 1800V

I

D

75 Amp

Applications

Circuit

Three phase rectifiers for power supplies

Rectifiers for DC motor field supplies

Battery charger rectifiers

Input rectifiers for variable frequency drives

+

MSD

~

-

Features

Three phase bridge rectifier

Blocking voltage: 800 to 1800V

Heat transfer through aluminum oxide DCB

ceramic isolated metal baseplate

Glass passivated chip

Module Type

TYPE

MSD75 – 08

MSD75 – 12

MSD75 – 16

MSD75 – 18

V

RRM

800V

1200V

1600V

1800V

V

RSM

900V

1300V

1700V

1900V

Maximum Ratings

Symbol

ID

IFSM

it

Visol

Tvj

Tstg

Mt

Ms

Weight

2

Conditions

Tc=110℃

T=10mS Tvj =45℃

a.c.50Hz;r.m.s.;1min

Values

75

750

2800

3000

-40 to 150

-40 to 125

Units

A

2

s

V

℃

Nm

g

To terminals(M5)

To heatsink(M5)

Module

5±15%

135

Thermal Characteristics

Symbol

Conditions

Rth(j-c)

Rth(c-s)

Per diode

Module

Values

1.1

0.07

Units

℃/W

Electrical Characteristics

Symbol

Conditions

VFM

IRD

T=25℃ IFM =150A

Tvj =25℃ VRD=VRRM

Tvj =150℃ VRD=VRRM

Values

1.6

≤0.3

≤5

Units

V

mA

MSD75-Rev 1

Dec, 2009

www.microsemi.com

1/4

MSD75-08 Related Products

	MSD75-08	MSD75-12	MSD75-16
Description	Bridge Rectifier Diode, 3 Phase, 75A, 800V V(RRM), Silicon, CASE M2, 5 PIN	Bridge Rectifier Diode, 3 Phase, 75A, 1200V V(RRM), Silicon, CASE M2, 5 PIN	Bridge Rectifier Diode, 3 Phase, 1600V V(RRM), Silicon, CASE M2, 5 PIN
Objectid	2102648419	2102648422	1464743960
package instruction	CASE M2, 5 PIN	R-XUFM-X5	CASE M2, 5 PIN
Contacts	5	5	5
Manufacturer packaging code	CASE M2	CASE M2	CASE M2
Reach Compliance Code	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99
Minimum breakdown voltage	800 V	1200 V	1600 V
Configuration	BRIDGE, 6 ELEMENTS	BRIDGE, 6 ELEMENTS	BRIDGE, 6 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
JESD-30 code	R-XUFM-X5	R-XUFM-X5	R-XUFM-X5
Maximum non-repetitive peak forward current	750 A	750 A	750 A
Number of components	6	6	6
Phase	3	3	3
Number of terminals	5	5	5
Maximum operating temperature	150 °C	150 °C	150 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Certification status	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	800 V	1200 V	1600 V
surface mount	NO	NO	NO
Terminal form	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Terminal location	UPPER	UPPER	UPPER
Maximum forward voltage (VF)	1.6 V	1.6 V	-
Maximum output current	75 A	75 A	-

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