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MSD75-12

Description
Bridge Rectifier Diode, 3 Phase, 75A, 1200V V(RRM), Silicon, CASE M2, 5 PIN
CategoryDiscrete semiconductor    diode   
File Size148KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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MSD75-12 Overview

Bridge Rectifier Diode, 3 Phase, 75A, 1200V V(RRM), Silicon, CASE M2, 5 PIN

MSD75-12 Parametric

Parameter NameAttribute value
Objectid2102648422
package instructionR-XUFM-X5
Contacts5
Manufacturer packaging codeCASE M2
Reach Compliance Codecompliant
ECCN codeEAR99
Minimum breakdown voltage1200 V
ConfigurationBRIDGE, 6 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.6 V
JESD-30 codeR-XUFM-X5
Maximum non-repetitive peak forward current750 A
Number of components6
Phase3
Number of terminals5
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current75 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1200 V
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
MSD75
Glass Passivated Three
Phase Rectifier Bridge
V
RRM
800 to 1800V
I
D
75 Amp
Applications
Circuit
Three phase rectifiers for power supplies
Rectifiers for DC motor field supplies
Battery charger rectifiers
Input rectifiers for variable frequency drives
+
MSD
~
~
~
-
Features
Three phase bridge rectifier
Blocking voltage: 800 to 1800V
Heat transfer through aluminum oxide DCB
ceramic isolated metal baseplate
Glass passivated chip
Module Type
TYPE
MSD75 – 08
MSD75 – 12
MSD75 – 16
MSD75 – 18
V
RRM
800V
1200V
1600V
1800V
V
RSM
900V
1300V
1700V
1900V
Maximum Ratings
Symbol
ID
IFSM
it
Visol
Tvj
Tstg
Mt
Ms
Weight
2
Conditions
Tc=110℃
T=10mS Tvj =45℃
T=10mS Tvj =45℃
a.c.50Hz;r.m.s.;1min
Values
75
750
2800
3000
-40 to 150
-40 to 125
Units
A
A
A
2
s
V
Nm
Nm
g
To terminals(M5)
To heatsink(M5)
Module
5±15%
5±15%
135
Thermal Characteristics
Symbol
Conditions
Rth(j-c)
Rth(c-s)
Per diode
Module
Values
1.1
0.07
Units
℃/W
℃/W
Electrical Characteristics
Symbol
Conditions
VFM
IRD
T=25℃ IFM =150A
Tvj =25℃ VRD=VRRM
Tvj =150℃ VRD=VRRM
Values
1.6
≤0.3
≤5
Units
V
mA
mA
MSD75-Rev 1
Dec, 2009
www.microsemi.com
1/4

MSD75-12 Related Products

MSD75-12 MSD75-08 MSD75-16
Description Bridge Rectifier Diode, 3 Phase, 75A, 1200V V(RRM), Silicon, CASE M2, 5 PIN Bridge Rectifier Diode, 3 Phase, 75A, 800V V(RRM), Silicon, CASE M2, 5 PIN Bridge Rectifier Diode, 3 Phase, 1600V V(RRM), Silicon, CASE M2, 5 PIN
Objectid 2102648422 2102648419 1464743960
package instruction R-XUFM-X5 CASE M2, 5 PIN CASE M2, 5 PIN
Contacts 5 5 5
Manufacturer packaging code CASE M2 CASE M2 CASE M2
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Minimum breakdown voltage 1200 V 800 V 1600 V
Configuration BRIDGE, 6 ELEMENTS BRIDGE, 6 ELEMENTS BRIDGE, 6 ELEMENTS
Diode component materials SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
JESD-30 code R-XUFM-X5 R-XUFM-X5 R-XUFM-X5
Maximum non-repetitive peak forward current 750 A 750 A 750 A
Number of components 6 6 6
Phase 3 3 3
Number of terminals 5 5 5
Maximum operating temperature 150 °C 150 °C 150 °C
Minimum operating temperature -40 °C -40 °C -40 °C
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Certification status Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 1200 V 800 V 1600 V
surface mount NO NO NO
Terminal form UNSPECIFIED UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER UPPER
Maximum forward voltage (VF) 1.6 V 1.6 V -
Maximum output current 75 A 75 A -
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