3SK197
Silicon N Channel Dual Gate MOS FET
VHF RF Amplifier
VHF TV Tuner RF Amplifier, Frequency Converter
Features
• Compact package
• High conversion gain (24 dB typ.)
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
MPAK-4
2
3
Item
Symbol Rating
Unit
——————————————————————–
Drain to source voltage
V
DS
12
V
——————————————————————–
Gate 1 to source voltage
V
G1S
±10
V
——————————————————————–
Gate 2 to source voltage
V
G2S
±10
V
——————————————————————–
Drain current
I
D
35
mA
——————————————————————–
Channel dissipation
Pch
150
mW
——————————————————————–
Channel temperature
Tch
125
°C
——————————————————————–
Storage temperature
Tstg
–55 to +125 °C
——————————————————————–
1
4
1.
2.
3.
4.
Source
Gate 1
Gate 2
Drain
3SK197
Table 2 Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min Typ Max Unit Test condition
———————————————————————————————————————————————–
Drain to source breakdown voltage
V
(BR)DSX
12
—
—
V
V
G1S
= V
G2S
= –5 V,
I
D
= 200 µA
———————————————————————————————————————————————–
Gate 1 to source breakdown voltage
V
(BR)G1SS
±10 —
—
V
I
G1
= ±10 µA,
V
G2S
= V
DS
= 0
———————————————————————————————————————————————–
Gate 2 to source breakdown voltage
V
(BR)G2SS
±10 —
—
V
I
G2
= ±10 µA,
V
G1S
= V
DS
= 0
———————————————————————————————————————————————–
Gate 1 cutoff current
I
G1SS
—
—
±100 nA
V
G1S
= ±8 V,
V
G2S
= V
DS
= 0
———————————————————————————————————————————————–
Gate 2 cutoff current
I
G2SS
—
—
±100 nA
V
G2S
= ±8 V,
V
G1S
= V
DS
= 0
———————————————————————————————————————————————–
Gate 1 to source cutoff voltage
V
G1S(off)
0
—
–1
V
V
DS
= 10 V, V
G2S
= 3 V,
I
D
= 100 µA
———————————————————————————————————————————————–
Gate 2 to source cutoff voltage
V
G2S(off)
0
—
–1
V
V
DS
= 10 V, V
G1S
= 3 V,
I
D
= 100 µA
———————————————————————————————————————————————–
Drain current
I
DSS
1
4
10
mA
V
DS
= 6 V, V
G2S
= 3 V,
V
G1S
= 0
———————————————————————————————————————————————–
Forward transfer admittance
|y
fs
|
20
27
—
mS
V
DS
= 6 V, V
G2S
= 4.5 V,
I
D
= 5 mA, f = 1 kHz
———————————————————————————————————————————————–
Input capacitance
Ciss
—
4.3
5.5
pF
V
DS
= 6 V, V
G2S
= 3 V,
———————————————————————————————————–
I
D
= 10 mA, f = 1 MHz
Output capacitance
Coss
—
2.2
3
pF
———————————————————————————————————–
Reverse transfer capacitance
Crss
—
0.03 0.04 pF
———————————————————————————————————————————————–
Power gain
PG
28
30
—
dB
V
DS
= 6 V, V
G2S
= 3 V,
———————————————————————————————————–
I
D
= 10 mA, f = 200 MHz
Noise figure
NF
—
1.4
2.5
dB
———————————————————————————————————————————————–
Conversion gain
CG
20
24.6 —
dB
V
DS
= 6 V, V
G2S
= 4.5 V,
I
D
= 2 mA, f = 200 MHz,
f
OSC
= 230 NHz
———————————————————————————————————————————————–
• Marking is “WI-”.
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