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FDD45AN06LA0-F085

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size164KB,11 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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FDD45AN06LA0-F085 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

FDD45AN06LA0-F085 Parametric

Parameter NameAttribute value
MakerFairchild
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)25 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)55 W
surface mountYES
Base Number Matches1
FDD45AN06LA0
February 2004
FDD45AN06LA0
N-Channel PowerTrench
®
MOSFET
60V, 22A, 45mΩ
Features
• r
DS(ON)
= 39mΩ (Typ.), V
GS
= 5V, I
D
= 22A
• Q
g
(tot) = 8.3nC (Typ.), V
GS
= 5V
• Low Miller Charge
• Low Q
RR
Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 83535
Applications
• Motor / Body Load Control
• ABS Systems
• Powertrain Management
• Injection Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 12V and 24V systems
DRAIN (FLANGE)
D
GATE
SOURCE
G
TO-252AA
FDD SERIES
S
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
I
D
Continuous (T
C
= 25 C, V
GS
= 5V)
Continuous (T
C
= 100 C, V
GS
= 5V)
Continuous (T
A
= 25 C, V
GS
= 5V, R
θJA
= 52 C/W)
Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25 C
Operating and Storage Temperature
o
o
o
o
o
Parameter
Ratings
60
±20
25
22
16
5.2
Figure 4
15
55
0.37
-55 to 175
Units
V
V
A
A
A
A
A
mJ
W
W/
o
C
o
C
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in copper pad area
2
2.73
100
52
o
o
o
C/W
C/W
C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certificatio
n.
©2004 Fairchild Semiconductor Corporation
FDD45AN06LA0 Rev. A

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