4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL816 Series
Schematic
Features:
•
Current transfer ratio
(CTR: 50~600% at I
F
=5mA, V
CE
=5V)
(CTR: 63~320% at I
F
=10mA, V
CE
=5V)
•
High isolation voltage between inputs
and output (Viso=5000 V rms)
•
Creepage distance >7.62 mm
•
Operating temperature up to +110°C
•
Compact small outline package
•
Pb free and RoHS compliant.
•
UL approved (No. E214129)
•
VDE approved (No. 132249)
•
SEMKO approved
•
NEMKO approved
•
DEMKO approved
•
FIMKO approved
•
CSA approved
Pin Configuration
1. Anode
2. Cathode
3. Emitter
4. Collector
Description
The EL816 series of devices each consist of an infrared emitting diodes,
optically coupled to a phototransistor detector.
They are packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option.
Applications
•
Programmable controllers
•
System appliances, measuring instruments
•
Telecommunication equipments
•
Home appliances, such as fan heaters, etc.
•
Signal transmission between circuits of different potentials and impedances
1
Copyright © 2010, Everlight All Rights Reserved. Release Date : May 13, 2013. Issue No: DPC-0000009 Rev. 10
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DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL816 series
Absolute Maximum Ratings (Ta=25℃)
Parameter
Forward current
Peak forward current (1us, pulse)
Input
Reverse voltage
Power Dissipation
No derating required up to T
a
= 100°C
Power dissipation
Derating factor (above T
a
= 80°C)
Output
Collector current
Collector-Emitter voltage
Emitter-Collector voltage
Total Power Dissipation
Isolation Voltage*
1
Operating Temperature
Storage Temperature
Soldering Temperature*
2
Symbol
I
F
I
FP
V
R
P
D
Rating
60
1
6
100
Unit
mA
A
V
mW
150
P
C
5.8
I
C
V
CEO
V
ECO
P
TOT
V
ISO
T
OPR
T
STG
T
SOL
50
80
6
200
5000
-55 to 110
-55 to 125
260
mW
mW/°C
mA
V
V
mW
V rms
°C
°C
°C
Notes:
*1
AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1, 2 are shorted together, and pins 3, 4 are shorted together.
*
2 For 10 seconds
2
Copyright © 2010, Everlight All Rights Reserved. Release Date : May 21, 2013. Issue No:DPC-0000009 Rev. 10
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DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL816 series
Electro-Optical Characteristics (Ta=25℃ unless specified otherwise)
Input
Parameter
Forward Voltage
Reverse Current
Input capacitance
Symbol
V
F
I
R
C
in
Min.
-
-
-
Typ.
1.2
-
30
Max.
1.4
10
250
Unit
V
μA
pF
Condition
I
F
= 20mA
V
R
= 4V
V = 0, f = 1kHz
Output
Parameter
Collector-Emitter dark
current
Collector-Emitter
breakdown voltage
Emitter-Collector
breakdown voltage
Symbol
I
CEO
BV
CEO
BV
ECO
Min
-
80
6
Typ.
-
-
-
Max.
100
-
-
Unit
nA
V
V
Condition
V
CE
= 20V, I
F
= 0mA
I
C
= 0.1mA
I
E
= 0.1mA
Transfer Characteristics
Parameter
EL816
EL816A
EL816B
EL816C
EL816D
Current
Transfer
ratio
EL816X
EL816Y
EL816I
EL816J
EL816K
EL816I
EL816J
EL816K
CTR
22
34
56
-
-
-
-
-
-
CTR
Symbol
Min
50
80
130
200
300
100
150
63
100
160
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
600
160
260
400
600
200
300
125
200
320
%
I
F
= 1mA ,V
CE
= 5V
I
F
= 10mA ,V
CE
= 5V
%
I
F
= 5mA ,V
CE
= 5V
Unit
Condition
3
Copyright © 2010, Everlight All Rights Reserved. Release Date : May 21, 2013. Issue No:DPC-0000009 Rev. 10
www.everlight.com
DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL816 series
Transfer Characteristics (T
a
=25°C unless specified otherwise) Continuity
Max.
0.2
-
1.0
-
18
18
Unit
V
Ω
pF
kHz
µs
µs
Parameter
Collector-Emitter
saturation voltage
Isolation resistance
Floating capacitance
Cut-off frequency
Rise time
Fall time
Symbol
V
CE(sat)
R
IO
C
IO
fc
t
r
t
f
Min
-
5×10
10
-
-
-
-
Typ.
0.1
-
0.6
80
4
3
Condition
I
F
= 20mA ,I
C
= 1mA
V
IO
= 500Vdc,
40~60% R.H.
V
IO
= 0, f = 1MHz
V
CE
= 5V, I
C
= 2mA
R
L
= 100Ω, -3dB
V
CE
= 2V, I
C
= 2mA,
R
L
= 100Ω
* Typical values at T
a
= 25°C
4
Copyright © 2010, Everlight All Rights Reserved. Release Date : May 21, 2013. Issue No:DPC-0000009 Rev. 10
www.everlight.com
DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL816 series
Typical Electro-Optical Characteristics Curves
5
Copyright © 2010, Everlight All Rights Reserved. Release Date : May 21, 2013. Issue No:DPC-0000009 Rev. 10
www.everlight.com
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