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MT41K1G8TRF-125:E TR

Description
IC ddr3 sdram 8gbit 800mhz fbga
Categorystorage   
File Size311KB,13 Pages
ManufacturerMicron
Websitehttp://www.micron.com/
Environmental Compliance  
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MT41K1G8TRF-125:E TR Overview

IC ddr3 sdram 8gbit 800mhz fbga

8Gb: x4, x8 TwinDie DDR3L SDRAM
Description
TwinDie™ 1.35V DDR3L SDRAM
MT41K2G4 – 128 Meg x 4 x 8 Banks x 2 Ranks
MT41K1G8 – 64 Meg x 8 x 8 Banks x 2 Ranks
Description
The 8Gb (TwinDie™) DDR3L SDRAM (1.35V) uses
Micron’s 4Gb DDR3L SDRAM die (essentially two
ranks of the 4Gb DDR3L SDRAM). Refer to Micron’s
4Gb DDR3 SDRAM data sheet for the specifications
not included in this document. Specifications for base
part number MT41K1G4 correlate to TwinDie manu-
facturing part number MT41K2G4; specifications for
base part number MT41K512M8 correlate to TwinDie
manufacturing part number MT41K1G8.
Options
• Configuration
– 128 Meg x 4 x 8 banks x 2 ranks
– 64 Meg x 8 x 8 banks x 2 ranks
• FBGA package (Pb-free)
– 78-ball FBGA
(10.5mm x 12mm x 1.2mm) Die
Rev :D
– 78-ball FBGA
(9.5mm x 11.5mm x 1.2mm) Die
Rev :E
• Timing – cycle time
1
– 1.071ns @ CL = 13 (DDR3L-1866)
– 1.25ns @ CL = 11 (DDR3L-1600)
– 1.5ns @ CL = 9 (DDR3L-1333)
– 1.87ns @ CL = 7 (DDR3L-1066)
• Self refresh
– Standard
• Operating temperature
– Commercial (0°C
T
C
95°C)
– Industrial (-40°C
T
C
95°C) Rev. E
• Revision
Note:
1. CL = CAS (READ) latency.
Marking
2G4
1G8
THE
TRF
Features
• Uses 4Gb Micron die
• Two ranks (includes dual CS#, ODT, CKE, and ZQ
balls)
• Each rank has eight internal banks for concurrent
operation
• V
DD
= V
DDQ
= 1.35V (1.283–1.45V); backward com-
patible to V
DD
= V
DDQ
= 1.5V ±0.075V
• 1.35V center-terminated push/pull I/O
• JEDEC-standard ball-out
• Low-profile package
• T
C
of 0°C to 95°C
– 0°C to 85°C: 8192 refresh cycles in 64ms
– 85°C to 95°C: 8192 refresh cycles in 32ms
– Industrial temperature (IT) available (Rev. E)
Table 1: Key Timing Parameters
Speed Grade
-107
1
,
2
,
3
1
,
2
-107
-125
-15E
-187E
None
None
IT
:D/:E
Data Rate (MT/s)
1866
1600
1333
1066
Target
t
RCD-
t
RP-CL
13-13-13
11-11-11
9-9-9
7-7-7
t
RCD
(ns)
t
RP
(ns)
CL (ns)
13.91
13.75
13.5
13.1
13.91
13.75
13.5
13.1
13.91
13.75
13.5
13.1
-125
-15E
1
-187E
Notes:
1. Backward compatible to 1066, CL = 7 (-187E).
2. Backward compatible to 1333, CL = 9 (-15E).
3. Backward compatible to 1600, CL = 11 (-125).
PDF: 09005aef84787542
DDR3L_8Gb_x4_x8_2CS_TwinDie.pdf - Rev. F 05/13 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2011 Micron Technology, Inc. All rights reserved.

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