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M29W800DB70ZE6E

Description
IC flash 8mbit 70ns 48tfbga
Categorystorage   
File Size1MB,52 Pages
ManufacturerMicron
Websitehttp://www.micron.com/
Environmental Compliance  
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M29W800DB70ZE6E Overview

IC flash 8mbit 70ns 48tfbga

M29W800DT
M29W800DB
8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block)
3 V supply flash memory
Features
Supply voltage
– V
CC
= 2.7 V to 3.6 V for program, erase
and read
Access times: 45, 70, 90 ns
Programming time
– 10
μs
per byte/word typical
19 memory blocks
– 1 boot block (top or bottom location)
– 2 parameter and 16 main blocks
Program/erase controller
– Embedded byte/word program algorithms
Erase suspend and resume modes
– Read and program another block during
erase suspend
Unlock bypass program command
– Faster production/batch programming
Temporary block unprotection mode
Common flash interface
– 64-bit security code
Low power consumption
– Standby and automatic standby
100,000 program/erase cycles per block
Electronic signature
– Manufacturer code: 0020h
– Top device code M29W800DT: 22D7h
– Bottom device code M29W800DB: 225Bh
TFBGA48 (ZE)
6 x 8 mm
TSOP48 (N)
12 x 20 mm
SO44 (M)
FBGA
April 2009
Rev 11
1/52
www.numonyx.com
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