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25F120

Description
25 A, 1200 V, SILICON, RECTIFIER DIODE, DO-203AA
CategoryDiscrete semiconductor    diode   
File Size55KB,6 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

25F120 Overview

25 A, 1200 V, SILICON, RECTIFIER DIODE, DO-203AA

25F120 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeDO-4
package instructionO-MUPM-D1
Contacts1
Reach Compliance Codecompliant
ECCN codeEAR99
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.9 V
JEDEC-95 codeDO-203AA
JESD-30 codeO-MUPM-D1
JESD-609 codee0
Maximum non-repetitive peak forward current373 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature175 °C
Maximum output current25 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1200 V
surface mountNO
Terminal surfaceTIN LEAD
Terminal formSOLDER LUG
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Bulletin I2018 rev. B 09/98
25F(R) SERIES
STANDARD RECOVERY DIODES
Stud Version
Features
High surge current capability
Avalanche types available
Stud cathode and stud anode version
Wide current range
Types up to 1200V V
RRM
25 A
TypicalApplications
Battery charges
Converters
Power supplies
Machine tool controls
Major Ratings and Characteristics
Parameters
I
F(AV)
@ T
C
I
F(RMS)
I
FSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
RRM
T
J
range
range
25F(R)
25
120
40
356
373
636
580
100 to 1200
- 65 to 175
Units
A
°C
A
A
A
A
2
s
A
2
s
V
°C
case style
DO-203AA (DO-4)
www.irf.com
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