BFP92A / BFP92AW
Vishay Semiconductors
Silicon NPN Planar RF Transistor
Features
•
•
•
•
•
High power gain
Low noise figure
e3
High transition frequency
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
2
1
SOT-143
3
4
2
1
SOT-343
Applications
RF amplifier up to GHz range specially for wide band
antenna amplifier.
3
4
Mechanical Data
Typ:
BFP92A
Case:
SOT-143 Plastic case
Weight:
approx. 8.0 mg
Marking:
92V
Pinning:
1 = Collector, 2 = Emitter
3 = Base, 4 = Emitter
Typ:
BFP92AW
Case:
SOT-343 Plastic case
Weight:
approx. 6.0 mg
Marking:
W92
Pinning:
1 = Collector, 2 = Emitter,
3 = Base, 4 = Emitter
Electrostatic sensitive device.
Observe precautions for handling.
13579
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
T
amb
≤
60 °C
Test condition
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Value
20
15
2
30
200
150
- 65 to + 150
Unit
V
V
V
mA
mW
°C
°C
Document Number 85019
Rev. 1.4, 15-Apr-05
www.vishay.com
1
BFP92A / BFP92AW
Vishay Semiconductors
Maximum Thermal Resistance
Parameter
Junction ambient
1)
1)
Test condition
Symbol
R
thJA
Value
450
Unit
K/W
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35
µm
Cu
Electrical DC Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector-emitter cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown
voltage
Collector-emitter saturation
voltage
Test condition
V
CE
= 20 V, V
BE
= 0
V
CB
= 15 V, I
E
= 0
V
EB
= 2 V, I
C
= 0
I
C
= 1 mA, I
B
= 0
I
C
= 30 mA, I
B
= 3 mA
Symbol
I
CES
I
CBO
I
EBO
V
(BR)CEO
V
CEsat
h
FE
50
15
0.1
100
0.4
150
Min
Typ.
Max
100
100
10
Unit
µA
nA
µA
V
V
DC forward current transfer ratio V
CE
= 10 V, I
C
= 14 mA
Electrical AC Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
Power gain
Linear output voltage - two tone
intermodulation test
Third order intercept point
Test condition
V
CE
= 10 V, I
C
= 14 mA,
f = 500 MHz
V
CB
= 10 V, f = 1 MHz
V
CE
= 10 V, f = 1 MHz
V
EB
= 0.5 V, f = 1 MHz
V
CE
= 10 V, Z
S
= 50
Ω,
f = 800 MHz, I
C
= 2 mA
V
CE
= 10 V, Z
L
= Z
Lopt
,
I
C
= 14 mA, f = 800 MHz
V
CE
= 10 V, I
C
= 14 mA,
d
IM
= 60 dB, f
1
= 806 MHz,
f
2
= 810 MHz, Z
S
= Z
L
= 50
Ω
V
CE
= 10 V, I
C
= 14 mA,
f = 800 MHz
Symbol
f
T
C
cb
C
ce
C
eb
F
G
pe
V
1
= V
2
Min
Typ.
6
0.25
0.2
0.7
1.8
18
120
Max
Unit
GHz
pF
pF
pF
dB
dB
mV
IP
3
24
dBm
www.vishay.com
2
Document Number 85019
Rev. 1.4, 15-Apr-05
BFP92A / BFP92AW
Vishay Semiconductors
Common Emitter S-Parameters
Z
0
= 50
Ω,
T
amb
= 25 °C, unless otherwise specified
V
CE
/V
I
C
/mA
f/MHz
LIN
MAG
5
2
100
300
500
800
1000
1200
1500
1800
2000
2200
2500
2800
3000
5
5
100
300
500
800
1000
1200
1500
1800
2000
2200
2500
2800
3000
5
10
100
300
500
800
1000
1200
1500
1800
2000
2200
2500
2800
3000
0.905
0.795
0.677
0.552
0.499
0.478
0.463
0.464
0.478
0.492
0.501
0.532
0.550
0.790
0.619
0.499
0.427
0.405
0.405
0.415
0.430
0.447
0.465
0.484
0.518
0.533
0.647
0.475
0.410
0.390
0.385
0.394
0.414
0.435
0.447
0.468
0.491
0.522
0.538
S11
ANG
deg
-16.8
-47.3
-72.7
-103.8
-121.0
-136.4
-156.6
-173.5
177.2
166.5
153.6
143.0
136.4
-27.1
-72.1
-103.6
-137.5
-152.9
-166.6
178.0
165.6
157.7
149.9
140.2
130.8
126.3
-41.7
-100.6
-133.3
-161.5
-174.9
175.6
164.5
153.5
148.0
141.7
133.6
126.2
122.0
6.54
5.72
4.83
3.76
3.24
2.84
2.43
2.10
1.94
1.81
1.64
1.49
1.40
14.00
10.70
8.01
5.60
4.65
3.98
3.29
2.80
2.57
2.38
2.12
1.92
1.80
22.60
14.47
9.86
6.55
5.35
4.53
3.70
3.13
2.86
2.64
2.36
2.12
1.98
LIN
MAG
S21
ANG
deg
165.6
142.2
124.5
105.3
95.7
87.2
75.5
66.0
59.6
53.5
44.5
36.3
31.6
159.0
129.4
111.4
94.6
86.6
79.5
69.7
61.5
55.9
50.7
42.8
35.3
31.1
151.4
118.3
102.2
88.2
81.3
75.1
66.4
58.9
53.7
49.0
41.7
34.6
30.7
0.019
0.049
0.068
0.083
0.088
0.092
0.096
0.098
0.100
0.100
0.107
0.106
0.108
0.017
0.039
0.050
0.059
0.065
0.070
0.078
0.086
0.092
0.097
0.109
0.113
0.117
0.015
0.030
0.038
0.048
0.055
0.062
0.074
0.084
0.092
0.098
0.111
0.116
0.122
LIN
MAG
S12
ANG
deg
78.3
60.4
48.5
37.3
33.1
29.9
26.7
25.1
24.9
24.9
25.2
24.8
24.8
74.0
54.0
45.9
42.3
41.8
41.8
41.8
42.1
41.7
41.8
38.9
38.7
37.7
69.2
52.9
50.1
51.4
52.4
52.8
52.3
51.7
50.8
49.5
46.2
45.2
43.8
0.973
0.896
0.802
0.707
0.671
0.643
0.614
0.592
0.583
0.578
0.572
0.569
0.556
0.942
0.765
0.634
0.549
0.524
0.508
0.490
0.474
0.469
0.465
0.459
0.455
0.443
0.889
0.637
0.519
0.462
0.451
0.442
0.432
0.421
0.418
0.416
0.410
0.404
0.392
LIN
MAG
S22
ANG
deg
-6.9
-17.2
-23.3
-28.7
-31.4
-33.9
-37.9
-42.2
-45.4
-48.3
-53.5
-59.9
-64.3
-11.7
-24.6
-28.1
-29.8
-31.0
-32.3
-35.8
-39.9
-43.1
-46.1
-51.9
-58.4
-62.8
-16.7
-28.3
-27.9
-26.9
-27.6
-28.9
-32.6
-36.8
-40.3
-43.3
-49.4
-56.2
-60.7
Document Number 85019
Rev. 1.4, 15-Apr-05
www.vishay.com
3
Power technology
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