SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
KTC8050S
EPITAXIAL PLANAR NPN TRANSISTOR
L
E
B
L
FEATURE
・Complementary
to KTC8550S.
A
ex) KTC8050S-RTK/HU
Q
G
・Suffix
U : Qualified to AEC-Q101.
2
H
3
1
P
P
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
*
T
j
T
stg
RATING
35
30
5
800
-800
350
150
-55½150
UNIT
V
V
V
mA
mA
mW
℃
℃
M
* P
C
: Package Mounted On 99.5% Alumina (10×8×0.6㎜)
Marking
h
FE
Rank
Lot No.
Type Name
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Note : h
FE
(1) Classification
C : 100½200,
SYMBOL
I
CBO
V
(BR)CBO
V
(BR)CEO
h
FE
(1) (Note)
h
FE
(2)
V
CE(sat)
V
BE
f
T
C
ob
D : 150½300
TEST CONDITION
V
CB
=15V, I
E
=0
I
C
=0.5mA, I
E
=0
I
C
=1mA, I
B
=0
V
CE
=1V, I
C
=50mA
V
CE
=1V, I
C
=350mA
I
C
=500mA, I
B
=20mA
V
CE
=1V, I
C
=500mA
V
CE
=5V, I
C
=10mA
V
CB
=10V, f=1MHz, I
E
=0
MIN.
-
35
30
100
60
-
-
-
-
TYP.
-
-
-
-
-
-
-
120
13
MAX.
50
-
-
300
-
0.5
1.2
-
-
V
V
MHz
pF
UNIT
nA
V
V
2018. 04. 10
Revision No : 2
K
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
BK
J
MAXIMUM RATING (Ta=25℃)
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
Q
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
0.1 MAX
C
N
D
1/2
KTC8050S
I
C
- V
CE
1k
COLLECTOR CURRENT I
C
(mA)
800
600
400
200
0
0
1
2
3
4
5
COMMON EMITTER
Ta=25 C
h
FE
- I
C
1k
7
6
5
4
3
2
I
B
=1mA
0
COMMON EMITTER
V
CE
=1V
Ta=100 C
Ta=25 C
Ta=-25 C
DC CURRENT GAIN h
FE
6
8
500
300
100
50
30
10
1
3
10
30
100
300
1k
COLLECTOR CURRENT I
C
(mA)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
V
CE(sat)
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
1
0.5
0.3
0
10
a=
T
C
I
C
- V
BE
1k
COLLECTOR CURRENT I
C
(mA)
500
300
100
Ta=25
C
Ta=
100
COMMON EMITTER
I
C
/I
B
=25
COMMON EMITTER
V
CE
=1V
Ta=-25 C
0.05
0.03
Ta=25 C
Ta=100 C
10
5
3
1
0
0.2
0.01
1
3
10
30
100
300
1k
COLLECTOR CURRENT I
C
(mA)
0.4
0.6
Ta=-2
5
0.1
25 C
-25 C
50
30
C
C
0.8
1.0
1.2
BASE-EMITTER VOLTAGE V
BE
(V)
Pc - Ta
COLLECTOR POWER DISSIPATION
Pc (mW)
500
400
300
200
100
0
1
MOUNTED ON 99.5%
ALUMINA 10x8x0.6mm
1
2
Ta=25 C
2
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE Ta ( C)
2018. 04. 10
Revision No : 2
2/2
Integrated technical exchanges
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