30WQ10GPbF
Vishay High Power Products
Schottky Rectifier, 3.5 A
FEATURES
Base
cathode
4, 2
• Popular D-PAK outline
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
Available
RoHS*
COMPLIANT
D-PAK
1
Anode
3
Anode
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for industrial level
DESCRIPTION
PRODUCT SUMMARY
I
F(AV)
V
R
3.5 A
100 V
The 30WQ10GPbF surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and small foot prints on PC board. Typical applications are in
disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 µs sine
3 Apk, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform
VALUES
3.5
100
440
0.63
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
30WQ10GPbF
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
Maximum peak one cycle non-repetitive
surge current
See fig. 7
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 135 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 1 A, L = 10 mH
Current decaying linearly to zero in 1 µs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated load
condition and with rated
V
RRM
applied
VALUES
3.5
440
70
5.0
0.5
mJ
A
A
UNITS
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94201
Revision: 18-Apr-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1
30WQ10GPbF
Vishay High Power Products
Schottky Rectifier, 3.5 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
3A
Maximum forward voltage drop
See fig. 1
V
FM (1)
6A
3A
6A
Maximum reverse leakage current
See fig. 2
Threshold voltage
Forward slope resistance
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
I
RM (1)
V
F(TO)
r
t
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
T
J
= T
J
maximum
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
TEST CONDITIONS
T
J
= 25 °C
VALUES
0.81
0.96
0.63
0.74
0.15
4.9
0.48
30.89
92
5.0
10 000
mA
V
mΩ
pF
nH
V/µs
V
UNITS
T
J
= 125 °C
V
R
= Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Approximate weight
Marking device
Note
(1)
SYMBOL
T
J (1)
, T
Stg
R
thJC
DC operation
See fig. 4
TEST CONDITIONS
VALUES
- 40 to 150
4.70
0.3
0.01
UNITS
°C
°C/W
g
oz.
Case style D-PAK (similar to TO-252AA)
30WQ10G
dP
tot
1
------------ < ------------- thermal runaway condition for a diode on its own heatsink
-
-
dT
J
R
thJA
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2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94201
Revision: 18-Apr-08
30WQ10GPbF
Schottky Rectifier, 3.5 A
Vishay High Power Products
10
I
F
- Instantaneous Forward Current (A)
100
T
J
= 150 °C
I
R
- Reverse Current (mA)
1
T
J
= 125 °C
T
J
= 100 °C
0.1
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 75 °C
0.01
T
J
= 50 °C
T
J
= 25 °C
0.001
1
0.4
0.0001
0.8
1.2
1.6
2.0
2.4
2.8
3.2
0
20
40
60
80
100
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
100
I
R
- Reverse Current (mA)
T
J
= 25 °C
10
0
20
40
60
80
100
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
P
DM
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
t
1
t
2
Single pulse
(thermal resistance)
0.1
0.00001
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Document Number: 94201
Revision: 18-Apr-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3
30WQ10GPbF
Vishay High Power Products
Schottky Rectifier, 3.5 A
155
3.5
Allowable Case Temperature (°C)
145
Average Power Loss (W)
150
3.0
2.5
2.0
1.5
DC
140
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
135
130
125
120
Square
wave
(D = 0.50)
80 %
Rated
V
RR
applied
DC
1.0
0.5
0
See note (1)
115
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
0
1
2
3
4
5
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
I
FSM
- Non-Repetitive Surge Current (A)
1000
100
At any rated load condition
and
with
rated
V
RRM
applied
following surge
10
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
(1)
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
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4
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94201
Revision: 18-Apr-08
30WQ10GPbF
Schottky Rectifier, 3.5 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
30
1
1
2
3
4
5
6
-
-
-
-
-
-
W
2
Q
3
10
4
G
5
TRL PbF
6
7
Current rating (3.5 A)
Package:
W = D-PAK (TO-252AA)
Q = Schottky “Q” series
Voltage code x 10 = V
RRM
(10 = 100 V)
Schottky generation
None = Tube (75 pieces)
TR = Tape and reel
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
7
-
None = Standard production
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
http://www.vishay.com/doc?95016
http://www.vishay.com/doc?95059
http://www.vishay.com/doc?95033
Document Number: 94201
Revision: 18-Apr-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
5
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