IL215A/216A/217A
PHOTOTRANSISTOR
SMALL OUTLINE
SURFACE MOUNT OPTOCOUPLER
• FEATURES
• High Current Transfer Ratio, I
F
=1 mA
IL215A—20% Minimum
IL216A—50% Minimum
IL217A—100% Minimum
• Isolation Voltage, 2500 VAC
RMS
• Electrical Specifications Similar to
Standard 6 Pin Coupler
• Industry Standard SOIC-8 Surface
Mountable Package
• Standard Lead Spacing, .05"
• Available in Tape and Reel Option
(Conforms to EIA Standard RS481A)
• Compatible with Dual Wave, Vapor Phase
and IR Reflow Soldering
• Underwriters Lab File #E52744
(Code Letter P)
DESCRIPTION
The IL215A/216A/217A are optically coupled pairs
with a Gallium Arsenide infrared LED and a silicon
NPN phototransistor. Signal information, including
a DC level, can be transmitted by the device while
maintaining a high degree of electrical isolation
between input and output. The IL215A//216A/217A
comes in a standard SOIC-8 small outline package
for surface mounting which makes it ideally suited
for high density applications with limited space. In
addition to eliminating through-holes requirements,
this package conforms to standards for surface
mounted devices.
The high CTR at low input current is designed for
low power consumption requirements such as
CMOS microprocessor interfaces.
Maximum Ratings
Emitter
Peak Reverse Voltage .....................................6.0 V
Continuous Forward Current ........................ 60 mA
Power Dissipation at 25°C............................90 mW
Derate Linearly from 25°C ......................1.2 mW/°C
Detector
Collector-Emitter Breakdown Voltage ...............30 V
Emitter-Collector Breakdown Voltage .................7 V
Collector-Base Breakdown Voltage ..................70 V
Power Dissipation ......................................150 mW
Derate Linearly from 25°C ......................2.0 mW/°C
Package
Total Package Dissipation at 25°C Ambient
(LED + Detector).....................................280 mW
Derate Linearly from 25°C ......................3.3 mW/°C
Storage Temperature .................. –55°C to +150°C
Operating Temperature .............. –55°C to +100°C
Soldering Time at 260°C ............................. 10 sec.
Dimensions in inches (mm)
.120±.005
(3.05±.13)
.240
(6.10)
Pin One ID
.192±.005
(4.88±.13)
.004 (.10)
.008 (.20)
Anode
.154±.005 Cathode
C
L (3.91±.13)
NC
NC
.016 (.41)
.015±.002
(.38±.05)
.008 (.20)
.050 (1.27)
typ.
.021 (.53)
1
2
3
4
8
7
6
5
NC
Base
Collector
Emitter
40°
7°
.058±.005
(1.49±.13)
.125±.005
(3.18±.13)
Lead
Coplanarity
±.0015
(.04)
max.
5° max.
R.010
(.25) max.
.020±.004
(.15±.10)
2 plcs.
Characteristics
(T
A
=25°C)
Symbol
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
Breakdown Voltage
Collector-Emitter
Emitter-Collector
Dark Current,
Collector-Emitter
Capacitance,
Collector-Emitter
Package
DC Current Transfer
Ratio
IL215A
IL216A
IL217A
Saturation Voltage,
Collector-Emitter
Isolation Test Voltage
Capacitance,
Input to Output
Resistance,
Input to Output
Switching Time
CTR
DC
20
50
100
V
CEsat
V
IO
C
IO
2500
0.5
50
80
130
0.5
VAC
RMS
pF
%
I
F
=10 mA,
V
CE
=5 V
B
VCEO
B
VECO
I
CEOdark
C
CE
30
7
5
10
50
V
V
nA
pF
I
C
=10
µA
I
E
=10
µA
V
CE
=10 V
I
F
=0
V
CE
=0
V
F
I
R
C
O
1.0
0.1
25
1.5
100
V
µA
pF
I
F
=1 mA
V
R
=6.0 V
V
R
=0
Min.
Typ.
Max.
Unit
Condition
I
F
=1 mA,
I
C
=0.1 mA
R
IO
t
on
,t
off
100
3.0
GΩ
µs
I
C
=2 mA,
R
E
=100
Ω,
V
CE
=10 V
5–1
This document was created with FrameMaker 4.0.4
Figure 1. Forward voltage versus forward current
1.4
Vf-Forward Voltage - V
1.3
1.2
1.1
1.0
0.9
Ta = 100°C
0.8
0.7
.1
1
10
If- Forward Current - mA
100
Ta = 25°C
Ta = -55°C
Figure 5. Collector-base photocurrent versus
LED current
Icb - Collector-base Current -
µA
1000
100
10
1
.1
.1
1
10
100
Ta = 25°C
Vcb = 9.3 V
IF - LED Current - mA
Figure 2. Normalized non-saturated and saturated
CTRce versus LED current
NCT Rce - Normalized CTRce
Figure 6. Collector-emitter leakage current versus
temperature
Collector emitter leakage current versus temperature
Iceo - Collector-Emitter - nA
10
10
10
5
4
3
1.5
Normalized to:
Vce = 10 V
IF = 10 mA
Ta = 25
°C
Vce = 5 V
1.0
10 2
10
10
1
0
Vce = 10V
TYPICAL
0.5
Vce = 0.4 V
0.0
.1
1
10
IF - LED Current - mA
100
10 -1
10 -2
-20
0
20
40
60
80
100
Ta - Ambient Temperature -
°C
Figure 3. Collector-emitter current versus LED current
150
Ta = 25°C
Figure 7. Normalized saturated HFE versus base
current and temperature
2.0
70°C
50°C
1.5
1.0
Vce = 0.4 V
0.5
0.0
1
10
100
Ib - Base Current -
µA
1000
25°C
Normalized to:
Ib = 20µA
Vce = 10 V
Ta = 25
°C
Vce = 10 V
100
50
Vce = 0.4 V
0
.1
1
10
IF - LED Current - mA
100
Figure 4. Normalized collector-base photocurrent
versus LED current
Figure 8. Normalized non-saturated and saturated
CTRce versus LED current
NCTRce - Normalized CTRce
NIcb - Normalized Icb
100
Normalized to:
Vcb = 9.3 V
10
IF = 1 mA
Ta = 25
°C
1
.1
.1
1
10
IF - LED Current - mA
100
NHFE(sat) - Normalized
Saturated HFE
Ice - Collector-emitter
Current - mA
2.0
1.5
1.0
0.5
Normalized to:
Ta = 25
°C
Vce = 5 V
IF = 1 mA
Vce = 5 V
Vce = .4 V
0.0
.1
1
10
IF - LED Current - mA
100
IL215A/216A/217A
5–2
Figure 9. Normalized non-saturated and saturated
collector-emitter current versus LED current
100
Normalized to:
Ta = 25°C
Vce = 5 V
IF = 1 mA
Vce = 5 V
Vce = .4 V
Figure 13. Low to high propagation delay versus
LED current and load resistor
7
80
tpLH - Low-High Propagation
Delay -
µs
NIce - Normalized Ice
10KΩ
60
40
20
0
0
5
10
15
IF - LED Current - mA
20
4.7KΩ
2KΩ
Ta = 25°C, Vcc = 5 V, Vth = 1.5 V
10
1
.1
.01
.1
1
10
IF - LED Current - mA
100
Figure 10. Normalized collector-base photocurrent
versus LED current
100
Normalized to:
Ta = 25°C
Vce = 5 V
IF = 1 mA
Figure 14. Normalized non-saturated HFE versus
base current and temperature
1.2
NHFE - Normalized HFE
70°C
50°C
1.0
0.8
0.6
0.4
1
25°C
-20°C
NIcb - Normalized Icb
10
1
.1
.01
.01
Normalized to:
Ib = 20µA
Vce = 10 V
Ta = 25°C
.1
1
10
100
IF - LED Current - mA
1000
10
100
Ib - Base Current -
µA
1000
Figure 11. Collector-base photocurrent versus LED
current
1000
Icb - Collector-base
photocurrent -µa
Figure 15. Typical switching characteristics versus
base resistance (saturated operation)
100
Input:
IF =10mA
50 Pulse width=100 mS
Duty cycle=50%
Ta = 25°C
Vcb = 9.3 V
100
10
1
.1
.01
.1
1
10
100
IF - LED Current - mA
1000
Switching time (µs)
T
OF
F
10
5
T
ON
1.0
10K
50K 100K
500K 1M
Base-emitter resistance, RBE (Ω)
Figure 12. High to low propagation delay versus
LED current and load resistor
tpHL - High-Low Propagation
Delay -
µs
20
10KΩ
15
10
5
0
0
5
10
15
IF - LED Current - mA
20
2KΩ
4.7KΩ
Ta = 25°C
Vcc = 5 V
Vth = 1.5 V
Figure 16. Typical switching timesversus load
resistance
1000
Input:
500 I
F
=10 mA
Pulse width=100 mS
Duty cycle=50%
100
50
10
5
1
Switching time (µS)
T
O
FF
T
ON
0.1
0.5 1
5
10
50 100
Load resistance RL (KΩ)
IL215A/216A/217A
5–3
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