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2N1259

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size138KB,1 Pages
ManufacturerSemiconductor Technology Inc
Download Datasheet Parametric View All

2N1259 Overview

Transistor

2N1259 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.1 A
ConfigurationSingle
Minimum DC current gain (hFE)25
JESD-609 codee0
Maximum operating temperature200 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.275 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1

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