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ASI1N23WG

Description
SILICON MIXER DIODE
File Size14KB,1 Pages
ManufacturerASI [ASI Semiconductor, Inc]
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ASI1N23WG Overview

SILICON MIXER DIODE

1N23WG
SILICON MIXER DIODE
DESCRIPTION:
The
ASI 1N23WG
is a Silicon Mixer
Diode Designed for Applications
Operating From 8.0 to 12.4 GHz.
PACKAGE STYLE DO- 23
FEATURES:
High burnout resistance
Low noise figure
Hermetically sealed package
Matched pairs available by adding
suffix “M” or “MR” for matched forward
and reverse
MAXIMUM RATINGS
I
F
V
R
P
DISS
T
J
T
STG
20 mA
1.0 V
2.0
(ERGS)
@ T
C
= 25 °C
-55 °C to +150 °C
-55 °C to +150 °C
NONE
CHARACTERISTICS
SYMBOL
NF
V
SWR
Z
IF
frange
R
L
= 22
T
C
= 25 °C
TEST CONDITIONS
F = 9375 MHz
R
L
= 100
P
lo
= 1.0 mW
I
F
= 30 MHz
N
Fif
= 1.5 dB
MINIMUM TYPICAL
MAXIM
6.5
1.3
UNITS
dB
f = 1000 Hz
335
8.0
465
12.4
GHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1

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