IRHNA63260 datasheet, PDF - EEWORLD Datasheet

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IRHNA63260: DescriptionPower Field-Effect Transistor,; CategoryDiscrete semiconductor The transistor; File Size759KB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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IRHNA63260 Overview

Power Field-Effect Transistor,

IRHNA63260 Parametric

Parameter Name	Attribute value
Maker	Infineon
package instruction	CHIP CARRIER, R-CBCC-N3
Reach Compliance Code	compliant
Avalanche Energy Efficiency Rating (Eas)	268 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (Abs) (ID)	56 A
Maximum drain current (ID)	56 A
Maximum drain-source on-resistance	0.028 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-CBCC-N3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	250 W
Maximum pulsed drain current (IDM)	224 A
Guideline	RH - 300K Rad(Si)
surface mount	YES
Terminal form	NO LEAD
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	150 ns
Maximum opening time (tons)	200 ns
Base Number Matches	1

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PD-94342I

IRHNA67260

JANSR2N7583U2

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-2)

Product Summary

Part Number

IRHNA67260

IRHNA63260

Radiation Level

100 kRads(Si)

300 kRads(Si)

RDS(on)

0.028

56A*

QPL Part Number

JANSR2N7583U2

JANSF2N7583U2

SMD-2

200V, N-CHANNEL

REF: MIL-PRF-19500/760

TECHNOLOGY

Description

IR HiRel R6 technology provides high performance power

MOSFETs for space applications. These devices have been

characterized for both Total Dose and Single Event Effect

(SEE) with useful performance up to LET of 90 (MeV/(mg/cm

The combination of low RDS(on) and low gate charge reduces

the power losses in switching applications such as DC-DC

converters and motor controllers. These devices retain all of the

well established advantages of MOSFETs such as voltage

control, fast switching and temperature stability of electrical

parameters.

Features



Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Simple Drive Requirements

Hermetically Sealed

Electrically Isolated

Ceramic Package

Light Weight

Surface Mount

ESD Rating: Class 3A per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Symbol

@ V

= 12V, T

= 25°C

@ T

= 25°C

dv/dt

STG

Pre-Irradiation

Parameter

Value

56*

224

250

2.0

±20

268

5.0

-55 to + 150

300 (for 5s)

3.3 (Typical)

W/°C

V/ns

°C

Units

Continuous Drain Current

Pulsed Drain Current



Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy



Avalanche Current



Repetitive Avalanche Energy



Peak Diode Recovery dv/dt



Operating Junction and

Storage Temperature Range

Lead Temperature

Weight

@ V

= 12V, T

= 100°C Continuous Drain Current

* Current is limited by package

For Footnotes, refer to the page 2.

International Rectifier HiRel Products, Inc.

2018-10-24

IRHNA63260 Related Products

	IRHNA63260	IRHNA67260D
Description	Power Field-Effect Transistor,	Power Field-Effect Transistor,
Maker	Infineon	Infineon
package instruction	CHIP CARRIER, R-CBCC-N3	SMD-2, 3 PIN
Reach Compliance Code	compliant	compliant
Avalanche Energy Efficiency Rating (Eas)	268 mJ	268 mJ
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V	200 V
Maximum drain current (Abs) (ID)	56 A	56 A
Maximum drain current (ID)	56 A	56 A
Maximum drain-source on-resistance	0.028 Ω	0.028 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-CBCC-N3	R-CBCC-N3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR
Package form	CHIP CARRIER	CHIP CARRIER
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	250 W	250 W
Maximum pulsed drain current (IDM)	224 A	224 A
Guideline	RH - 300K Rad(Si)	RH - 100K Rad(Si)
surface mount	YES	YES
Terminal form	NO LEAD	NO LEAD
Terminal location	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Maximum off time (toff)	150 ns	150 ns
Maximum opening time (tons)	200 ns	200 ns
Base Number Matches	1	1

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