Linear L2
TM
Power MOSFETs
w/ Extended FBSOA
N-Channel Enhancement Mode
Avalanche Rated
IXTA15N50L2
IXTP15N50L2
IXTH15N50L2
V
DSS
I
D25
R
DS(on)
=
=
≤
500V
15A
480mΩ
Ω
TO-263 AA (IXTA)
G
S
D (Tab)
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, Pulse Width Limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
Maximum Ratings
500
500
±20
±30
15
35
15
750
300
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
g
Features
G
D
G
DS
TO-220AB (IXTP)
D (Tab)
TO-247 (IXTH)
S
D
(Tab)
D
= Drain
Tab = Drain
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220 & TO-247)
TO-263
TO-220
TO-247
300
260
1.13/10
2.5
3.0
6.0
G = Gate
S = Source
Designed for Linear Operation
International Standard Packages
Avalanche Rated
Molding Epoxies Meet UL 94 V-0
Flammability Classification
Guaranteed FBSOA at 75°C
Advantages
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 250μA
V
DS
= V
GS
, I
D
= 250μA
V
GS
=
±
20V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 125°C
Characteristic Values
Min.
Typ. Max.
500
2.5
4.5
V
V
Easy to Mount
Space Savings
High Power Density
Applications
Solid State Circuit Breakers
Soft Start Controls
Linear Amplifiers
Programmable Loads
Current Regulators
±100
nA
25
μA
200
μA
480 mΩ
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1
© 2011 IXYS CORPORATION, All Rights Reserved
DS100054B(12/11)
IXTA15N50L2 IXTP15N50L2
IXTH15N50L2
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
(TO-220)
(TO-247)
0.50
0.25
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
Resistive Switching Times
V
GS
= 10V, 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 10Ω (External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 10V, I
D
= 0.5 • I
D25
, Note 1
Characteristic Values
Min.
Typ.
Max.
4.5
6.3
4080
265
68
38
73
110
65
123
20
72
8.0
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.42
°C/W
°C/W
°C/W
1 = Gate
2 = Drain
3 = Source
TO-247 Outline
Safe Operating Area Specification
Symbol
SOA
Test Conditions
V
DS
= 400V, I
D
= 375mA, T
C
= 75°C, t
p
= 2s
Characteristic Values
Min.
Typ.
Max.
150
W
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
Note
V
GS
= 0V
Repetitive, pulse width limited by T
JM
I
F
= 15A, V
GS
= 0V, Note 1
I
F
= 15A, -di/dt = 100A/μs, V
R
= 100V, V
GS
= 0V
1: Pulse test, t
≤
300μs, duty cycle, d
≤
2%.
570
Characteristic Values
Min.
Typ.
Max.
15
60
1.5
A
A
V
ns
TO-220 Outline
TO-263 Outline
Pins:
1 - Gate
3 - Source
2 - Drain
1 = Gate
2 = Drain
3 = Source
4 = Drain
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTA15N50L2 IXTP15N50L2
IXTH15N50L2
Fig. 1. Output Characteristics @ T
J
=25ºC
16
14
12
V
GS
= 20V
12V
10V
9V
8V
40
35
30
V
GS
= 20V
14V
12V
10V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
I
D
- Amperes
I
D
- Amperes
10
8
6
4
2
0
0
1
2
3
4
5
25
9V
20
8V
15
10
5
0
6V
5V
0
5
10
15
20
25
30
7V
6V
5V
7V
6
7
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics @ T
J
= 125ºC
16
14
12
8V
V
GS
= 20V
10V
9V
2.8
Fig. 4. R
DS(on)
Normalized to I
D
= 7.5A Value vs.
Junction Temperature
V
GS
= 10V
2.4
R
DS(on)
- Normalized
2.0
I
D
= 15A
I
D
= 7.5A
I
D
- Amperes
10
8
6
4
2
0
0
2
4
6
8
10
12
14
6V
7V
1.6
1.2
0.8
5V
0.4
-50
-25
0
25
50
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 7.5A Value vs.
Drain Current
3.0
V
GS
= 10V
2.6
T
J
= 125ºC
16
14
12
2.2
Fig. 6. Maximum Drain Current vs.
Case Temperature
R
DS(on)
- Normalized
I
D
- Amperes
T
J
= 25ºC
10
8
6
4
1.8
1.4
1.0
2
0.6
0
5
10
15
20
25
30
35
0
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
T
C
- Degrees Centigrade
© 2011 IXYS CORPORATION, All Rights Reserved
IXTA15N50L2 IXTP15N50L2
IXTH15N50L2
Fig. 7. Input Admittance
18
16
10
14
25ºC
12
T
J
= - 40ºC
Fig. 8. Transconductance
10
8
6
4
T
J
= 125ºC
25ºC
- 40ºC
g
f s
- Siemens
12
8
125ºC
I
D
- Amperes
6
4
2
2
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
0
0
2
4
6
8
10
12
14
16
18
20
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
45
40
35
30
25
20
15
10
5
0
0.5
0.6
0.7
0.8
0.9
1
T
J
= 125ºC
T
J
= 25ºC
2
0
0
20
40
16
14
12
V
DS
= 250V
I
D
= 7.5A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
V
GS
- Volts
10
8
6
4
60
80
100
120
140
160
180
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
10,000
1
Fig. 12. Maximum Transient Thermal Impedance
Capacitance - PicoFarads
Ciss
Coss
Z
(th)JC
- ºC / W
35
40
1,000
0.1
100
Crss
f
= 1 MHz
10
0
5
10
15
20
25
30
0.01
0.0001
0.001
0.01
0.1
1
10
V
DS
- Volts
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA15N50L2 IXTP15N50L2
IXTH15N50L2
Fig. 13. Forward-Bias Safe Operating Area
@ T
C
= 25ºC
100
100
Fig. 14. Forward-Bias Safe Operating Area
@ T
C
= 75ºC
R
DS(on)
Limit
25µs
10
100µs
R
DS(on)
Limit
25µs
10
I
D
- A m p e re s
1ms
I
D
- A m p e re s
100µs
1ms
1
10ms
10ms
1
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
100ms
DC
T
J
= 150ºC
T
C
= 75ºC
Single Pulse
DC
100ms
0.1
10
100
1000
0.1
10
100
1000
V
DS
- Volts
V
DS
- Volts
© 2011 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_15N50L2(6R)12-22-11-A
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