Data Sheet
PT7C5014AL series
Crystal Oscillator
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Features
•
•
•
•
•
•
Up to 60MHz operation
Capacitors C
G
(18pF) and C
D
(18pF) built-in
Inverter amplifier feedback resistor built-in
2.7 to 5.5 V supply voltage
CMOS output duty level
Clock output (f
O
, f
O
/2, f
O
/4, f
O
/8 or f
O
/16,
determined by internal connection, f
O
is oscillator
frequency)
•
•
•
Standby function
Power-save pull-up resistor built-in
Die form
Description
The
PT7C5014AL
series
are
fundamental
frequency crystal oscillator ICs. They are available for
frequencies up to 60MHz.
Ordering Information
Part no.
PT7C5014ALx-2DE
PT7C5014ALx-3DE
Package type
Die form
Die form
Note:
1.Below is the detailed definition of part no.
2. “-2” & “-3” show the different die thickness; “-2”:
220±20um; “-3”: 180±20um.
Application
•
PT7C
5014
A
L
Used for crystal oscillator
1
Device Type
Clock Series
XO 5014 Series
Series Type
Output frequency
Suffix
1
2
3
4
5
Built-in capacitance
(pF)
C
G
C
D
f
output
(V)
Series Configuration
Part No.
PT7C5014AL1
PT7C5014AL2
PT7C5014AL3
PT7C5014AL4
PT7C5014AL5
Output
freq.
fo
f
o
/2
f
o
/4
f
o
/8
f
o
/16
18
18
4~60
4~60
f
O
f
O
/2
f
O
/4
f
O
/8
f
O
/16
Recommended operating freq. (MHz)
*1
V
DD
=2.7 to 3.6V
V
DD
=4.5 to 5.5V
C
L
=15pF
C
L
=30pF
C
L
=30pF
Standby
output state
4~60
High
impedance
Note*1:
The operating frequency is a yardstick value derived form the crystal used for PTI characteristics authentication.
However, the oscillator for frequency band is not guaranteed. Specifically, the characteristics can vary greatly due to crystal
characteristics and mounting conditions, so the oscillation of components must be carefully evaluated.
See Recommended Operating Conditions in Page 4.
PT0238(04/06)
1
Ver:0
Data Sheet
PT7C5014AL series
Crystal Oscillator
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Block Diagram
Function Description
Standby Function
When INHN goes LOW, the oscillator stops and the output on Q becomes high impedance.
INHN
HIGH (or open)
Low
Q
Any fo, fo/2, fo/4, fo/8, fo/16 output frequency
Normal operation
High impedance
Oscillator
Power-save Pull-up Resistance
The INHN pull-up resistance changes in response to the input level (HIGH or LOW). When INHN goes LOW (standby state), the
pull-up resistance becomes large to reduce the current consumption during standby.
PT0238(04/06)
2
Ver:0
Data Sheet
PT7C5014AL series
Crystal Oscillator
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Pad Configuration
Sensor
VDD
Q
Die No.
GND
INHN
XT
XTN
Pad Coordinate File
Pad Name
X Coordinate
Y Coordinate
Pad Name
X Coordinate
Y Coordinate
104.80
294.80
512.70
sensor
-50
730.00
XTN
550.50
VDD
104.90
503.50
GND
632.90
INHN
104.80
307.50
Q
632.90
XT
244.90
104.80
Note:
PT7C5014ALx-2: Substrate is connected to GND or VDD or floating.
PT7C5014ALx-3: Substrate is connected to GND or floating.
Die Size:
820µm*780µm (Including scribe line size.)
Die Thickness:
PT7C5014ALx-2: 220±20µm; PT7C5014ALx-3: 180±20µm( no coating);
Pad Size:
100µm*100µm
Pad Description
Pin
1
2
3
4
5
6
Sym.
XTN
XT
INHN
V
DD
GND
Q
Type
O
I
I
P
P
O
Amplifier output.
Amplifier input.
Description
Crystal oscillator connected between XT and XTN
Output state control input. High impedance when LOW. Pull-up resistor built in.
Supply voltage
Ground
Output. Output frequency (fo, fo/2, fo/4, fo/8, fo/16) determined by internal connection, fo is
oscillator frequency.
Cb
F (MHz)
40
50
R (Ω)
8.23
16.12
L (mH)
5.72
6.88
Ca (fF)
2.77
1.48
Cb (pF)
2.20
1.15
L
Ca
R
PT0238(04/06)
3
Ver:0
Data Sheet
PT7C5014AL series
Crystal Oscillator
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Maximum Ratings
Note:
oC to +150oC
Storage Temperature ................................................................................- 65
Stresses greater than those listed under MAXIMUM
Ambient Temperature with Power Applied................................................- 40oC to +85oC RATINGS may cause permanent damage to the
Supply Voltage to Ground Potential (V
DD
to GND) ...............- 0.5V to +7.0V device. This is a stress rating only and functional
DC Input (All Other Inputs except V
DD
& GND) ... -0.5V to V
DD
+0.5V operation of the device at these or any other condi-
DC Output............................................................... -0.5V to V
DD
+0.5V tions above those indicated in the operational sec-
DC Output Current (all outputs) ................................................... 12mA tions of this specification is not implied. Exposure to
absolute maximum rating conditions for extended
periods may affect reliability.
Recommended Operating Conditions
3 V operation
Sym.
V
DD
V
IN
T
A
f
OSC
Parameter
Supply voltage
Input voltage
Operating temperature
Operating frequency
All series
GND=0V
C
L
≤
15pF
C
L
≤
30pF
GND=0V
Series
Conditions
Min
2.7
0
-40
4
4
Typ
-
-
-
-
-
Max
3.6
V
DD
+85
60
60
Unit
V
V
°C
MHz
MHz
5 V operation
Sym.
V
DD
V
IN
T
A
f
OSC
Parameter
Supply voltage
Input voltage
Operating temperature
Operating frequency
All series
GND=0V, C
L
≤
30pF
GND=0V
Series
Conditions
Min
4.5
0
-40
4
Typ
-
-
-
-
Max
5.5
V
DD
+85
60
Unit
V
V
°C
MHz
PT0238(04/06)
4
Ver:0
Data Sheet
PT7C5014AL series
Crystal Oscillator
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DC Electrical Characteristics
3V operation: V
DD
= 2.7 to 3.6V, T
A
= -40 to 85°C, unless otherwise noted.
Sym.
Parameter
Condition
PT7C5014AL1
Measurement cct 3, load cct 1,
INHN = open, C
L
= 15pF
f = 60 MHz
PT7C5014AL2
PT7C5014AL3
PT7C5014AL4
PT7C5014AL5
Min
-
-
-
-
-
-
0.7 V
DD
-
2
Typ
6.5
4
3
2.5
2
-
-
-
6
100
-
-
300
18
18
2.4
0.3
Max
13
8
6
5
4
5
-
0.3 V
DD
18
300
10
Unit
I
DD
Current consumption
mA
I
ST
Standby current
Measurement cct 3, INHN=LOW
INHN pin
INHN pin
Measurement cct 4,
µA
V
V
MΩ
kΩ
µA
V
IH
High level input voltage
V
IL
Low level input voltage
R
UP1
R
UP2
I
Z
R
f
C
G
C
D
Output leakage current
Feedback resistance
Built-in capacitance
INHN pull-up resistance
30
Q: measurement cct2, INHN=LOW
Measurement cct 5
Design value, determined by the internal wafer pattern
15.3
2.1
-
V
OH
= V
DD
V
OL
= GND
-
-
100
15.3
10
600
20.7
pF
20.7
-
0.4
V
V
kΩ
V
OH
High level output voltage Q: measurement cct1, V
DD
= 2.7V, I
OH
=4mA
V
OL
Low level output voltage
Q: measurement cct2, V
DD
= 2.7V, I
OL
=4mA
PT0238(04/06)
5
Ver:0
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