SEMICONDUCTOR
TECHNICAL DATA
POWER AMPLIFIER APPLICATION.
POWER SWITCHING APPLICATION.
C
KTA1715
EPITAXIAL PLANAR PNP TRANSISTOR
A
B
E
F
G
D
FEATURES
Low Collector Saturation Voltage
: V
CE(sat)
=-0.5V(Max.) (I
C
=-1A)
High Speed Switching Time : t
stg
=1 S(Typ.)
Complementary to KTC2814.
H
J
K
L
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power
Dissipation
Junction Temperature
Storage Temperature Range
Ta=25
Tc=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
RATING
-50
-50
-5
-2
1.5
10
150
-55 150
UNIT
V
V
V
A
W
1. EMITTER
2. COLLECTOR
3. BASE
N
M
O
1
2
3
P
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
MILLIMETERS
8.3 MAX
5.8
0.7
_
Φ3.2 +
0.1
3.5
_
11.0
+
0.3
2.9 MAX
1.0 MAX
1.9 MAX
_
0.75
+
0.15
_
15.50
+
0.5
_
2.3
+
0.1
_
0.65
+
0.15
1.6
3.4 MAX
TO-126
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Turn On Time
Switching
Time
Storage Time
Fall Time
Note : h
FE
(1) Classification
SYMBOL
I
CBO
I
EBO
V
(BR)CEO
h
FE
(1) (Note)
h
FE
(2)
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
240
TEST CONDITION
V
CB
=-50V, I
E
=0
V
EB
=-5V, I
C
=0
I
C
=-10mA, I
B
=0
V
CE
=-2V, I
C
=-0.5A
V
CE
=-2V, I
C
=-1.5A
I
C
=-1A, I
B
=-0.05A
I
C
=-1A, I
B
=-0.05A
V
CE
=-2V, I
C
=-0.5A
V
CB
=-10V, I
E
=0, f=1MHz
20µs
I
B2
I
B1
INPUT
OUTPUT
I
B2
30Ω
I
B1
-I
B1
=I
B2
=0.05A
DUTY CYCLE < 1%
=
V
CC
=-30V
MIN.
-
-
-50
70
40
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
100
30
0.1
1.0
0.1
MAX.
-0.1
-0.1
-
240
-
-0.5
-1.2
-
-
-
-
-
UNIT
A
A
V
V
V
MHz
pF
S
O:70 140, Y:120
2003. 7. 24
Revision No : 3
1/3
KTA1715
STATIC CHARACTERISTICS
COLLECTOR CURRENT
I
C
(A)
-2.0
-1.6
-1.2
-0.8
-0.4
0
BASE-EMITTER
VOLTAGE V
BE
(V)
-0.4
-0.8
-1.2
-30 -20 -10
BASE CURRENT
I
B
(mA)
COMMON
EMITTER
Ta=25 C
I
B
=-2mA
0
V
C
E
V
CE
- I
C
-18
-15
-12
-10
-8
-6
-4
-25
-20
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
-1.2
-1.0
-10
COMMON EMITTER
Ta=25 C
I
B
=-5mA
-0.6
-0.4
-0.2
0
0
-0.4
-0.8
-1.2
-1.6
-1
20
-80
-0.8
-20
-40
=-
2V
0
-16
-200
-2.0
-2.4
-2.8
0
-2
-4
-6
-8
COLLECTOR EMITTER
VOLTAGE V
CE
(V)
COLLECTOR CURRENT I
C
(A)
V
CE
- I
C
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
-1.0
-5m
A
V
CE
- I
C
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
-1.2
-1.0
-20
-1.2
COMMON EMITTER
Ta=100 C
-20
COMMON EMITTER
Ta=-55 C
-30
-40
I
B
=
-0.8
-0.6
-0.4
-0.2
0
-60
-80
-1
20
-0.8
I
B
=-5mA
-60
-30
0
-16
0
-18
-200
-40
-0.6
-0.4
-0.2
0
0
-16
-200
0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
-2.8
0
-0.4
-0.8
-1.2
-1.6
-2.0
-1
20
-80
-2.4
-2.8
COLLECTOR CURRENT I
C
(A)
COLLECTOR CURRENT I
C
(A)
h
FE
- I
C
1k
DC CURRENT GAIN h
FE
500
300
Ta=100 C
Ta=25 C
COMMON EMITTER
V
CE
=-2V
100
50
30
Ta=-55 C
10
-0.01
-0.03
-0.1
-0.3
-1
-3
COLLECTOR CURRENT I
C
(A)
2003. 7. 24
Revision No : 3
2/3
KTA1715
V
CE(sat)
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
-1
-0.5
-0.3
BASE-TMITTER SATURATION
VOLTAGE V
BE(sat)
(V)
COMMON EMITTER
I
C
/I
B
=20
V
BE(sat)
- I
C
-1
-0.5
-0.3
COMMON EMITTER
I
C
/I
B
=20
-0.1
-0.05
-0.03
100
Ta=
C
-0.1
-0.05
-0.03
Ta=-55 C
Ta=25 C
Ta=-55 C
Ta=25 C
Ta=100 C
-0.01
-0.001
-0.03
-0.1
-0.3
-1
-3
-0.01
-0.001
-0.03
-0.1
-0.3
-1
-3
COLLECTOR CURRENT I
C
(A)
COLLECTOR CURRENT I
C
(A)
I
C
- V
BE
COLLECTOR CURRENT I
C
(A)
COMMON EMITTER
V
CE
=-2V
SAFE OPERATING AREA
COLLECTOR CURRENT I
C
(A)
-5
I MAX.(PULSED) *
-3
C
-1
-0.5
-0.3
-0.1
-0.05
-0.03
10
I
C
MAX.(CONTINUOUS)
m
10
S
1s
0m
*
D
S
*
OP C
*
ER
AT
IO
N
Ta
=2
5
C
* SINGLE
NONREPETITIVE
PULSE Ta=25 C
CURVES MUST BE
DERATED LINEARLY WITH
INCREASE IN TEMPERATURE
-2.0
S
1m
-1.5
Ta=100
C
*
-1.0
Ta=25 C
Ta=-55 C
-0.5
0
0
-0.4
-0.8
-1.2
-1.6
-2.0
-0.01
-0.2
-0.5
-1
-3
-10
-30
BASE-EMITTER VOLTAGE V
BE
(V)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
Pc - Ta
COLLECTOR POWER DISSIPATION
P
C
(W)
12
10
8
6
4
2
0
0
40
80
120
160
200
AMBIENT TEMPERATURE Ta ( C)
2003. 7. 24
Revision No : 3
V
CEO
MAX.
-100
3/3
Talking
京公网安备 11010802033920号
EEWORLD
