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PHP2N40E

Description
PowerMOS transistor
CategoryDiscrete semiconductor    The transistor   
File Size16KB,4 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric View All

PHP2N40E Overview

PowerMOS transistor

PHP2N40E Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)2.5 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)50 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Philips Semiconductors
Objective specification
PowerMOS transistor
PHP2N40E
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic envelope featuring high
avalanche energy capability, stable
blocking voltage, fast switching and
high thermal cycling performance
with low thermal resistance. Intended
for use in Switched Mode Power
Supplies (SMPS), motor control
circuits and general purpose
switching applications.
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
tot
R
DS(ON)
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state resistance
MAX.
400
2.5
50
3.5
UNIT
V
A
W
PINNING - TO220AB
PIN
1
2
3
tab
gate
drain
source
drain
DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
d
g
1 23
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DS
V
DGR
±V
GS
I
D
I
DM
I
DR
I
DRM
P
tot
T
stg
T
j
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (pulse peak
value)
Source-drain diode current
(DC)
Source-drain diode current
(pulse peak value)
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
R
GS
= 20 kΩ
T
mb
= 25 ˚C
T
mb
= 100 ˚C
T
mb
= 25 ˚C
T
mb
= 25 ˚C
T
mb
= 25 ˚C
T
mb
= 25 ˚C
MIN.
-
-
-
-
-
-
-
-
-
-55
-
MAX.
400
400
30
2.5
1.6
10
2.5
10
50
150
150
UNIT
V
V
V
A
A
A
A
A
W
˚C
˚C
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER
W
DSS
CONDITIONS
MIN.
MAX.
UNIT
Drain-source non-repetitive I
D
= 2.5 A ; V
DD
50 V ; V
GS
= 10 V ;
unclamped inductive turn-off R
GS
= 50
energy
T
j
= 25˚C prior to surge
T
j
= 100˚C prior to surge
Drain-source repetitive
I
D
= 2.5 A ; V
DD
50 V ;
unclamped inductive turn-off V
GS
= 10 V ; R
GS
= 50
; T
j
150 ˚C
energy
W
DSR1
-
-
-
120
20
3.6
mJ
mJ
mJ
1. Pulse width and frequency limited by T
j(max)
October 1996
1
Rev 1.000
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