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AT-41400-GP2

Description
RF Small Signal Bipolar Transistor, 0.06A I(C), 1-Element, C Band, Silicon, NPN
CategoryDiscrete semiconductor    The transistor   
File Size86KB,3 Pages
ManufacturerHewlett Packard Co.
Download Datasheet Parametric Compare View All

AT-41400-GP2 Overview

RF Small Signal Bipolar Transistor, 0.06A I(C), 1-Element, C Band, Silicon, NPN

AT-41400-GP2 Parametric

Parameter NameAttribute value
MakerHewlett Packard Co.
package instructionUNCASED CHIP, S-XUUC-N2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.06 A
Collector-emitter maximum voltage12 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
highest frequency bandC BAND
JESD-30 codeS-XUUC-N2
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formUNCASED CHIP
Polarity/channel typeNPN
Maximum power consumption environment0.5 W
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)9000 MHz
Base Number Matches1

AT-41400-GP2 Related Products

AT-41400-GP2 AT-41400-GP6
Description RF Small Signal Bipolar Transistor, 0.06A I(C), 1-Element, C Band, Silicon, NPN RF Small Signal Bipolar Transistor, 0.06A I(C), 1-Element, C Band, Silicon, NPN
Maker Hewlett Packard Co. Hewlett Packard Co.
package instruction UNCASED CHIP, S-XUUC-N2 UNCASED CHIP, S-XUUC-N2
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Other features LOW NOISE LOW NOISE
Maximum collector current (IC) 0.06 A 0.06 A
Collector-emitter maximum voltage 12 V 12 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 30 30
highest frequency band C BAND C BAND
JESD-30 code S-XUUC-N2 S-XUUC-N2
Number of components 1 1
Number of terminals 2 2
Maximum operating temperature 200 °C 200 °C
Package body material UNSPECIFIED UNSPECIFIED
Package shape SQUARE SQUARE
Package form UNCASED CHIP UNCASED CHIP
Polarity/channel type NPN NPN
Maximum power consumption environment 0.5 W 0.5 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form NO LEAD NO LEAD
Terminal location UPPER UPPER
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 9000 MHz 9000 MHz
Base Number Matches 1 1

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