AT-41400-GP6 datasheet, PDF - EEWORLD Datasheet

AT-41400-GP6: DescriptionRF Small Signal Bipolar Transistor, 0.06A I(C), 1-Element, C Band, Silicon, NPN; CategoryDiscrete semiconductor The transistor; File Size86KB，3 Pages; ManufacturerHewlett Packard Co.

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AT-41400-GP6 Overview

RF Small Signal Bipolar Transistor, 0.06A I(C), 1-Element, C Band, Silicon, NPN

Parameter Name	Attribute value
Maker	Hewlett Packard Co.
package instruction	UNCASED CHIP, S-XUUC-N2
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.06 A
Collector-emitter maximum voltage	12 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
highest frequency band	C BAND
JESD-30 code	S-XUUC-N2
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Package body material	UNSPECIFIED
Package shape	SQUARE
Package form	UNCASED CHIP
Polarity/channel type	NPN
Maximum power consumption environment	0.5 W
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	9000 MHz
Base Number Matches	1

	AT-41400-GP6	AT-41400-GP2
Description	RF Small Signal Bipolar Transistor, 0.06A I(C), 1-Element, C Band, Silicon, NPN	RF Small Signal Bipolar Transistor, 0.06A I(C), 1-Element, C Band, Silicon, NPN
Maker	Hewlett Packard Co.	Hewlett Packard Co.
package instruction	UNCASED CHIP, S-XUUC-N2	UNCASED CHIP, S-XUUC-N2
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE
Maximum collector current (IC)	0.06 A	0.06 A
Collector-emitter maximum voltage	12 V	12 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	30	30
highest frequency band	C BAND	C BAND
JESD-30 code	S-XUUC-N2	S-XUUC-N2
Number of components	1	1
Number of terminals	2	2
Maximum operating temperature	200 °C	200 °C
Package body material	UNSPECIFIED	UNSPECIFIED
Package shape	SQUARE	SQUARE
Package form	UNCASED CHIP	UNCASED CHIP
Polarity/channel type	NPN	NPN
Maximum power consumption environment	0.5 W	0.5 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	NO LEAD	NO LEAD
Terminal location	UPPER	UPPER
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	9000 MHz	9000 MHz
Base Number Matches	1	1

Shortcut: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

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