DL4006 datasheet, PDF - EEWORLD Datasheet

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DL4006: DescriptionRectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, MELF-2; CategoryDiscrete semiconductor diode; File Size35KB，3 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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DL4006 Overview

Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, MELF-2

DL4006 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Microsemi
Parts packaging code	MELF
package instruction	O-LELF-R2
Contacts	2
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	METALLURGICALLY BONDED
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JESD-30 code	O-LELF-R2
JESD-609 code	e0
Maximum non-repetitive peak forward current	30 A
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	1 A
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	800 V
Maximum reverse recovery time	2 µs
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WRAP AROUND
Terminal location	END
Base Number Matches	1

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21201 Itasca St.

Chatsworth, Ca 91311

Phone: (818) 701-4933

Fax: (818) 701-4939

DL4001

thru

DL4007

1 Amp Glass

Passivated Rectifier

50 - 1000 Volts

MELF

Cathode Mark

Features

•

Glass Passivated Junction

Low Current Leakage

Metalurgically Bonded Construction

Surface Mount Applications

Maximum Ratings

•

Operating Temperature: -65°C to +175°C

Storage Temperature: -65°C to +175°C

Maximum Thermal Resistance; 20°C/W Junction To Lead

Maximum

Recurrent

Peak

Reverse

Voltage

50V

100V

200V

400V

600V

800V

1000V

Maximum

DC

Blocking

Voltage

50V

100V

200V

400V

600V

800V

1000V

DIM

A

B

C

INCHES

MIN

.190

---

.095

Microsemi

Part Number

Device

Marking

Maximum

RMS

Voltage

35V

70V

140V

280V

420V

560V

700V

C

DL4001

DL4002

DL4003

DL4004

DL4005

DL4006

DL4007

None

B

A

DIMENSIONS

MM

MIN

4.80

---

2.40

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

I

F(AV)

1.0A

T

A

= 75°C

Current

Peak Forward Surge

I

FSM

30A

8.3ms, half sine

Current

Maximum

Instantaneous

V

F

1.1V

I

FM

= 1.0A;

Forward Voltage

T

J

= 25°C*

Maximum DC

Reverse Current At

I

R

5.0µA

T

J

= 25°C

Rated DC Blocking

50µA

T

J

= 125°C

Voltage

Typical Junction

C

J

15pF

Measured at

Capacitance

1.0MHz, V

R

=4.0V

*Pulse test: Pulse width 300

µsec,

Duty cycle 2%

MAX

.205

.022

.105

MAX

5.20

.55

2.67

NOTE

Nominal

∅

SUGGESTED SOLDER

PAD LAYOUT

.210”

.110”

.035”

þ

Santa Ana: (714) 979-8220

þ

Scottsdale: (602) 941-6300

þ

Colorado: (303) 469-2161

þ

Watertown: (617) 926-0404

þ

Chatsworth: (818) 701-4933

þ

Sertech Labs: (617) 924-9280

þ

Ireland: (353) 65-40044

þ

Bombay: (91) 22-832-002

þ

Hong Kong: (852) 2692-1202

MSC0166.PDF

DL4006 Related Products

	DL4006	DL4007	DL4002	DL4004
Description	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, MELF-2	Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, MELF-2	Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, MELF-2	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, MELF-2
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Parts packaging code	MELF	MELF	MELF	MELF
package instruction	O-LELF-R2	O-LELF-R2	MELF-2	MELF-2
Contacts	2	2	2	2
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
Other features	METALLURGICALLY BONDED	METALLURGICALLY BONDED	METALLURGICALLY BONDED	METALLURGICALLY BONDED
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V	1.1 V	1.1 V	1.1 V
JESD-30 code	O-LELF-R2	O-LELF-R2	O-LELF-R2	O-LELF-R2
JESD-609 code	e0	e0	e0	e0
Maximum non-repetitive peak forward current	30 A	30 A	30 A	30 A
Number of components	1	1	1	1
Number of terminals	2	2	2	2
Maximum operating temperature	175 °C	150 °C	175 °C	175 °C
Maximum output current	1 A	1 A	1 A	1 A
Package body material	GLASS	GLASS	GLASS	GLASS
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	800 V	1000 V	100 V	400 V
Maximum reverse recovery time	2 µs	2 µs	2 µs	2 µs
surface mount	YES	YES	YES	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WRAP AROUND	WRAP AROUND	WRAP AROUND	WRAP AROUND
Terminal location	END	END	END	END
Maker	Microsemi	-	Microsemi	Microsemi

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