DISCRETE SEMICONDUCTORS
DATA SHEET
M3D425
PDTC114EEF
NPN resistor-equipped transistor
Product specification
Supersedes data of 1998 Nov 11
1999 May 31
Philips Semiconductors
Product specification
NPN resistor-equipped transistor
FEATURES
•
Power dissipation comparable to
SOT23
•
Built-in bias resistors R1 and R2
(typ. 10 kΩ each)
•
Simplification of circuit design
•
Reduces number of components
and board space.
APPLICATIONS
•
Especially suitable for space
reduction in interface and driver
circuits
•
Inverter circuit configurations
without use of external resistors.
DESCRIPTION
NPN resistor-equipped transistor
encapsulated in an ultra small plastic
SMD SC-89 (SOT490) package.
PNP complement: PDTA114EEF.
PINNING
PIN
1
2
3
DESCRIPTION
base/input
emitter/ground
collector/output
1
2
MGA893 - 1
PDTC114EEF
handbook, halfpage
3
R1
1
R2
3
1
Top view
2
MAM412
2
Fig.1 Simplified outline (SC-89; SOT490) and symbol.
MARKING
TYPE
NUMBER
PDTC114EEF
MARKING
CODE
09
3
Fig.2
Equivalent inverter
symbol.
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
O
I
CM
P
tot
h
FE
R1
R2
------
-
R1
PARAMETER
collector-emitter voltage
output current (DC)
peak collector current
total power dissipation
DC current gain
input resistor
resistor ratio
T
amb
≤
25
°C
I
C
= 5 mA; V
CE
= 5 V
CONDITIONS
open base
−
−
−
−
30
7
0.8
MIN.
−
−
−
−
−
10
1
TYP.
MAX.
50
100
100
250
−
13
1.2
kΩ
UNIT
V
mA
mA
mW
1999 May 31
2
Philips Semiconductors
Product specification
NPN resistor-equipped transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
V
I
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
I
O
I
CM
P
tot
T
stg
T
j
T
amb
Note
1. Refer to SC-89 (SOT490) standard mounting conditions.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SC-89 (SOT490) standard mounting conditions.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R1
R2
------
-
R1
C
c
PARAMETER
collector cut-off current
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
CONDITIONS
I
E
= 0; V
CB
= 50 V
I
B
= 0; V
CE
= 30 V
I
B
= 0; V
CE
= 30 V; T
j
= 150
°C
I
C
= 0; V
EB
= 5 V
I
C
= 5 mA; V
CE
= 5 V
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100
µA;
V
CE
= 5 V
I
C
= 10 mA; V
CE
= 0.3 V
MIN.
−
−
−
−
30
−
−
2.5
7
0.8
−
PARAMETER
CONDITIONS
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
−
−
−
−
−
−65
−
−65
CONDITIONS
open emitter
open base
open collector
−
−
−
MIN.
PDTC114EEF
MAX.
50
50
10
+40
−10
100
100
250
+150
250
+150
V
V
V
V
V
UNIT
mA
mA
mW
°C
°C
°C
MAX.
500
UNIT
K/W
thermal resistance from junction to ambient in free air; note 1
TYP.
−
−
−
−
−
−
1.1
1.8
10
1
−
MAX.
100
1
50
400
−
150
0.8
−
13
1.2
2.5
UNIT
nA
µA
µA
µA
mV
V
V
kΩ
pF
1999 May 31
3
Philips Semiconductors
Product specification
NPN resistor-equipped transistor
PDTC114EEF
handbook, halfpage
10
3
MGM898
handbook, halfpage
1
MGM897
hFE
(2)
(1)
VCEsat
(V)
10
2
(3)
10
−1
(1)
(2)
(3)
10
1
10
−1
1
10
IC (mA)
10
2
10
−2
1
10
IC (mA)
10
2
V
CE
= 5 V.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−40 °C.
I
C
/I
B
= 20.
(1) T
amb
= 100
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−40 °C.
Fig.3
DC current gain as a function of collector
current; typical values.
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
handbook, halfpage
10
MGM900
10
2
handbook, halfpage
Vi(on)
MGM899
Vi(off)
(V)
(V)
10
(1)
(2)
(3)
(1) (2) (3)
1
1
10
−1
10
−2
10
−1
1
IC (mA)
10
10
−1
10
−1
1
10
IC (mA)
10
2
V
CE
= 5 V.
(1) T
amb
=
−40 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 100
°C.
V
CE
= 0.3 V.
(1) T
amb
=
−40 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 100
°C.
Fig.5
Input-off voltage as a function of collector
current; typical values.
Fig.6
Input-on voltage as a function of collector
current; typical values.
1999 May 31
4
Philips Semiconductors
Product specification
NPN resistor-equipped transistor
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
PDTC114EEF
SOT490
D
B
E
A
X
HE
v
M
A
3
A
1
e1
e
bp
2
w
M
B
Lp
detail X
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
0.8
0.6
b
p
0.33
0.23
c
0.2
0.1
D
1.7
1.5
E
0.95
0.75
e
1.0
e
1
0.5
H
E
1.7
1.5
L
p
0.5
0.3
v
0.1
w
0.1
OUTLINE
VERSION
SOT490
REFERENCES
IEC
JEDEC
EIAJ
SC-89
EUROPEAN
PROJECTION
ISSUE DATE
98-10-23
1999 May 31
5
京公网安备 11010802033920号
EEWORLD
