5962R9570801TJC datasheet, PDF

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5962R9570801TJC: Description2KX8 OTPROM, CDIP24; Categorystorage storage; File Size94KB，3 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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5962R9570801TJC Overview

2KX8 OTPROM, CDIP24

5962R9570801TJC Parametric

Parameter Name	Attribute value
Parts packaging code	DIP
package instruction	DIP, DIP24,.6
Contacts	24
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	100 ns
JESD-30 code	R-CDIP-T24
JESD-609 code	e4
memory density	16384 bit
Memory IC Type	OTP ROM
memory width	8
Number of functions	1
Number of terminals	24
word count	2048 words
character code	2000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	2KX8
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Encapsulate equivalent code	DIP24,.6
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Filter level	MIL-PRF-38535 Class T
Maximum seat height	5.08 mm
Maximum standby current	0.0002 A
Maximum slew rate	0.025 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5.5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	GOLD
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
total dose	100k Rad(Si) V
width	7.62 mm
Base Number Matches	1

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HS-6617RH-T

Data Sheet

July 1999

File Number

4608.1

Radiation Hardened 2K x 8 CMOS PROM

Intersil’s Satellite Applications Flow

(SAF) devices are fully

tested and guaranteed to 100kRAD total dose. These QML

Class T devices are processed to a standard ﬂow intended

to meet the cost and shorter lead-time needs of large

volume satellite manufacturers, while maintaining a high

level of reliability.

The Intersil HS-6617RH-T is a radiation hardened 16k

CMOS PROM, organized in a 2K word by 8-bit format. The

chip is manufactured using a radiation hardened CMOS

process, and is designed to be functionally equivalent to the

HM-6617. Synchronous circuit design techniques combine

with CMOS processing to give this device high speed

performance with very low power dissipation.

On chip address latches are provided, allowing easy

interfacing with recent generation microprocessors that use

multiplexed address/data bus structure, such as the

HS-80C86RH. The output enable control (G) simpliﬁes

microprocessor system interfacing by allowing output data

bus control, in addition to, the chip enable control.

Synchronous operation of the HS-6617RH-T is ideal for high

speed pipe-lined architecture systems and also in

synchronous logic replacement functions.

Features

• QML Class T, Per MIL-PRF-38535

• Radiation Performance

- Gamma Dose (γ) 1 x 10

RAD(Si)

- SEU LET 16MeV/mg/cm

- SEL LET 100MeV/mg/cm

• Field Programmable Nicrome Fuse Links

• Low Standby Power 1.1mW Max

• Low Operating Power 137.5mW/MHz Max

• Fast Access Time 100ns Max

• TTL Compatible Inputs/Outputs

• Synchronous Operation

• On Chip Address Latches, Three-State Outputs

Pinouts

HS1-6617RH-T (SBDIP), CDIP2-T24

TOP VIEW

24 V

23 A8

22 A9

21 P

20 G

19 A10

18 E

17 Q7

16 Q6

15 Q5

14 Q4

13 Q3

Speciﬁcations

Speciﬁcations for Rad Hard QML devices are controlled by

the Defense Supply Center in Columbus (DSCC). The SMD

numbers listed below must be used when ordering.

Detailed Electrical Speciﬁcations for the HS-6617RH-T

are contained in SMD 5962-95708.

A “hot-link” is provided

from our website for downloading.

www.intersil.com/spacedefense/newsafclasst.asp

Intersil’s Quality Management Plan (QM Plan), listing all

Class T screening operations, is also available on our

website.

www.intersil.com/quality/manuals.asp

Q1 10

Q2 11

GND 12

HS9-6617RH-T (FLATPACK), CDFP4-F24

TOP VIEW

GND

†

A10

Ordering Information

ORDERING

NUMBER

5962R9570801TJC

HS1-6617RH/Proto

5962R9570801TXC

HS9-6617RH/Proto

PART NUMBER

HS1-6617RH-T

HS1-6617RH/Proto

HS9-6617RH-T

HS9-6617RH/Proto

TEMP.

RANGE

(

-55 to 125

NOTE:

Minimum order quantity for -T is 150 units through

distribution, or 450 units direct.

†

P must be hardwired at all times to V

, except during

programming.

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

www.intersil.com or 407-727-9207

Intersil Corporation 1999

Satellite Applications Flow™ (SAF) is a trademark of Intersil Corporation.

5962R9570801TJC Related Products

	5962R9570801TJC	5962R9570801TXC	HS1-6617RH-T	HS9-6617RH-T
Description	2KX8 OTPROM, CDIP24	2KX8 OTPROM, 100ns, CDFP24, CERAMIC, DFP-24	2KX8 OTPROM, CDIP24	2KX8 OTPROM, 100ns, CDFP24, CERAMIC, DFP-24
Parts packaging code	DIP	DFP	DIP	DFP
package instruction	DIP, DIP24,.6	DFP, FL24,.4	DIP, DIP24,.6	DFP, FL24,.4
Contacts	24	24	24	24
Reach Compliance Code	unknown	unknown	not_compliant	not_compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
Maximum access time	100 ns	100 ns	100 ns	100 ns
JESD-30 code	R-CDIP-T24	R-CDFP-F24	R-CDIP-T24	R-CDFP-F24
JESD-609 code	e4	e4	e0	e0
memory density	16384 bit	16384 bit	16384 bit	16384 bit
Memory IC Type	OTP ROM	OTP ROM	OTP ROM	OTP ROM
memory width	8	8	8	8
Number of functions	1	1	1	1
Number of terminals	24	24	24	24
word count	2048 words	2048 words	2048 words	2048 words
character code	2000	2000	2000	2000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C
organize	2KX8	2KX8	2KX8	2KX8
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP	DFP	DIP	DFP
Encapsulate equivalent code	DIP24,.6	FL24,.4	DIP24,.6	FL24,.4
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	FLATPACK	IN-LINE	FLATPACK
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL
power supply	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Filter level	MIL-PRF-38535 Class T	MIL-PRF-38535 Class T	MIL-PRF-38535 Class T	MIL-PRF-38535 Class T
Maximum seat height	5.08 mm	2.92 mm	5.08 mm	2.92 mm
Maximum standby current	0.0002 A	0.0002 A	0.0002 A	0.0002 A
Maximum slew rate	0.025 mA	0.025 mA	0.025 mA	0.025 mA
Nominal supply voltage (Vsup)	5.5 V	5 V	5.5 V	5 V
surface mount	NO	YES	NO	YES
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	MILITARY	MILITARY	MILITARY
Terminal surface	GOLD	GOLD	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	FLAT	THROUGH-HOLE	FLAT
Terminal pitch	2.54 mm	1.27 mm	2.54 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL
total dose	100k Rad(Si) V	100k Rad(Si) V	100k Rad(Si) V	100k Rad(Si) V
width	7.62 mm	9.905 mm	7.62 mm	9.905 mm

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