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EMG9

Description
Emitter common (dual digital transistors)
CategoryDiscrete semiconductor    The transistor   
File Size64KB,2 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

EMG9 Overview

Emitter common (dual digital transistors)

EMG9 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerROHM Semiconductor
package instruction,
Reach Compliance Codecompli
Maximum collector current (IC)0.1 A
JESD-609 codee2
Number of components2
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.15 W
surface mountYES
Terminal surfaceTin/Copper (Sn/Cu)
EMG9 / UMG9N / FMG9A
Transistors
Emitter common
(dual digital transistors)
EMG9 / UMG9N / FMG9A
!
Features
1) Two DTC114E in a EMT or UMT or SMT package.
2) Mounting cost and area can be cut in half.
!
External dimensions
(Units : mm)
EMG9
0.22
(4)
(3)
(2)
(5)
!
Structure
Epitaxial planar type
NPN silicon transistor
(Built-in resistor type)
0.13
1.2
1.6
(1)
Each lead has same dimensions
ROHM : EMT5
Abbreviated symbol : G9
0.65 0.65
1.3
1.1
2.9
0.9
0.2
(6)
1.25
2.1
0.7
!
Equivalent circuit
EMG9 / UMG9N
(3)
R
1
DTr
2
(4)
R
2
(2)
R
2
(1)
R
1
=10kΩ
R
1
R
2
=10kΩ
DTr
1
0.15
0.1Min.
FMG9A
(3)
R
1
DTr
2
(2)
R
2
(4)
R
2
(5)
R
1
=10kΩ
R
1
R
2
=10kΩ
DTr
1
(1)
0to0.1
ROHM : UMT5
EIAJ : SC-88A
Abbreviated symbol : G9
(5)/(6)
FMG9A
0.95 0.95
1.9
0.3
(2)
(3)
(1)
1.6
0.15
!
Absolute maximum ratings
(Ta = 25°C)
Parameter
Supply voltage
Input voltage
Symbol
V
CC
V
IN
I
O
I
C (Max.)
Pd
Tj
Tstg
Limits
50
40
−10
50
100
150 (TOTAL)
300 (TOTAL)
150
−55∼+150
˚C
˚C
Unit
V
V
2.8
0.8
0.3to0.6
0to0.1
Each lead has same dimensions
ROHM : SMT5
EIAJ : SC-74A
Abbreviated symbol : G9
Output current
EMG9, UMG9N
Power
dissipation FMG9A
Junction temperature
Storage temperature
mA
mW
1
2
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
(5)
(4)
(1)
Each lead has same dimensions
2.0
(2)
The following characteristics apply to both the DTr
1
and
DTr
2
.
UMG9N
(4)
(3)
0.5
0.5 0.5
1.0
1.6

EMG9 Related Products

EMG9 FMG9A UMG9N
Description Emitter common (dual digital transistors) Emitter common (dual digital transistors) Emitter common (dual digital transistors)
Is it Rohs certified? conform to conform to conform to
Maker ROHM Semiconductor ROHM Semiconductor ROHM Semiconductor
Reach Compliance Code compli compli compli
Maximum collector current (IC) 0.1 A 0.05 A 0.05 A
JESD-609 code e2 e1 e2
Number of components 2 2 2
Polarity/channel type NPN NPN NPN
surface mount YES YES YES
Terminal surface Tin/Copper (Sn/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Copper (Sn/Cu)
Maximum power dissipation(Abs) 0.15 W 0.3 W -
Minimum DC current gain (hFE) - 30 30
Transistor component materials - SILICON SILICON
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