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FMG9A

Description
Emitter common (dual digital transistors)
CategoryDiscrete semiconductor    The transistor   
File Size64KB,2 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

FMG9A Overview

Emitter common (dual digital transistors)

FMG9A Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G5
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresDIGITAL, BUILT IN BIAS RESISTOR
Maximum collector current (IC)0.05 A
Collector-emitter maximum voltage50 V
ConfigurationCOMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)30
JESD-30 codeR-PDSO-G5
JESD-609 codee1
Number of components2
Number of terminals5
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
EMG9 / UMG9N / FMG9A
Transistors
Emitter common
(dual digital transistors)
EMG9 / UMG9N / FMG9A
!
Features
1) Two DTC114E in a EMT or UMT or SMT package.
2) Mounting cost and area can be cut in half.
!
External dimensions
(Units : mm)
EMG9
0.22
(4)
(3)
(2)
(5)
!
Structure
Epitaxial planar type
NPN silicon transistor
(Built-in resistor type)
0.13
1.2
1.6
(1)
Each lead has same dimensions
ROHM : EMT5
Abbreviated symbol : G9
0.65 0.65
1.3
1.1
2.9
0.9
0.2
(6)
1.25
2.1
0.7
!
Equivalent circuit
EMG9 / UMG9N
(3)
R
1
DTr
2
(4)
R
2
(2)
R
2
(1)
R
1
=10kΩ
R
1
R
2
=10kΩ
DTr
1
0.15
0.1Min.
FMG9A
(3)
R
1
DTr
2
(2)
R
2
(4)
R
2
(5)
R
1
=10kΩ
R
1
R
2
=10kΩ
DTr
1
(1)
0to0.1
ROHM : UMT5
EIAJ : SC-88A
Abbreviated symbol : G9
(5)/(6)
FMG9A
0.95 0.95
1.9
0.3
(2)
(3)
(1)
1.6
0.15
!
Absolute maximum ratings
(Ta = 25°C)
Parameter
Supply voltage
Input voltage
Symbol
V
CC
V
IN
I
O
I
C (Max.)
Pd
Tj
Tstg
Limits
50
40
−10
50
100
150 (TOTAL)
300 (TOTAL)
150
−55∼+150
˚C
˚C
Unit
V
V
2.8
0.8
0.3to0.6
0to0.1
Each lead has same dimensions
ROHM : SMT5
EIAJ : SC-74A
Abbreviated symbol : G9
Output current
EMG9, UMG9N
Power
dissipation FMG9A
Junction temperature
Storage temperature
mA
mW
1
2
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
(5)
(4)
(1)
Each lead has same dimensions
2.0
(2)
The following characteristics apply to both the DTr
1
and
DTr
2
.
UMG9N
(4)
(3)
0.5
0.5 0.5
1.0
1.6

FMG9A Related Products

FMG9A EMG9 UMG9N
Description Emitter common (dual digital transistors) Emitter common (dual digital transistors) Emitter common (dual digital transistors)
Is it Rohs certified? conform to conform to conform to
Maker ROHM Semiconductor ROHM Semiconductor ROHM Semiconductor
Reach Compliance Code compli compli compli
Maximum collector current (IC) 0.05 A 0.1 A 0.05 A
JESD-609 code e1 e2 e2
Number of components 2 2 2
Polarity/channel type NPN NPN NPN
surface mount YES YES YES
Terminal surface Tin/Silver/Copper (Sn/Ag/Cu) Tin/Copper (Sn/Cu) Tin/Copper (Sn/Cu)
Minimum DC current gain (hFE) 30 - 30
Maximum power dissipation(Abs) 0.3 W 0.15 W -
Transistor component materials SILICON - SILICON

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Index Files: 1069  1063  1991  543  507  22  41  11  28  46 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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