FDP6030BL/FDB6030BL
July 2000
FDP6030BL/FDB6030BL
N-Channel Logic Level PowerTrench
MOSFET
General Description
This N-Channel Logic Level MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R
DS(on)
specifications resulting in DC/DC power supply designs
with higher overall efficiency.
Features
• 40 A, 30 V. R
DS(ON)
= 0.018
Ω
@ V
GS
= 10 V
R
DS(ON)
= 0.024
Ω
@ V
GS
= 4.5 V.
• Critical DC electrical parameters specified at elevated
temperature.
• Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient suppressor.
• High performance trench technology for
extremely low R
DS(ON)
.
• 175°C maximum junction temperature rating.
D
D
G
G
D
S
TO-220
FDP Series
G
S
T
C
= 25°C unless otherwise noted
TO-263AB
FDB Series
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
R
θ
JC
R
θ
JA
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current
Parameter
FDP6030BL
FDB6030BL
30
±
20
Units
V
V
A
W
W/
°
C
°
C
°
C/W
°
C/W
- Continuous
- Pulsed
(Note 1)
40
120
60
0.36
-65 to +175
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
Operating and Storage Junction Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
2.5
62.5
Package Marking and Ordering Information
Device Marking
FDB6030BL
FDP6030BL
Device
FDB6030BL
FDP6030BL
Reel Size
13’’
Tube
Tape Width
24mm
N/A
Quantity
800
45
200
Fairchild Semiconductor International
FDP6030BL/FDB6030BL Rev.C
FDP6030BL/FDB6030BL
Electrical Characteristics
Symbol
W
DSS
I
AR
T
C
= 25°C unless otherwise noted
Parameter
Test Conditions
(Note 1)
Min
Typ
Max
150
40
Units
mJ
A
DRAIN-SOURCE AVALANCHE RATINGS
Single Pulse Drain-Source
V
DD
= 15 V, I
D
= 40 A
Avalanche Energy
Maximum Drain-Source Avalnche Current
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= 250
µ
A
Breakdown Voltage Temperature I
D
= 250
µ
A, Referenced to 25
°
C
Coefficient
Zero Gate Voltage Drain Current V
DS
= 24 V, V
GS
= 0 V
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
(Note 1)
Off Characteristics
BV
DSS
∆
BV
DSS
∆
T
J
I
DSS
I
GSSF
I
GSSR
30
23
1
100
-100
V
mV/
°
C
µ
A
nA
nA
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
On Characteristics
V
GS(th)
∆
V
GS(th)
∆
T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
µ
A
I
D
= 250
µ
A, Referenced to 25
°
C
V
GS
= 10 V, I
D
= 20 A,
V
GS
= 10 V, I
D
= 20 A, T
J
= 125
°
C
V
GS
= 4.5 V,I
D
= 17 A
V
GS
= 10 V, V
DS
= 10 V
V
DS
= 5 V, I
D
= 20 A
1
1.6
-4.5
0.015
0.021
0.019
3
V
mV/
°
C
Ω
0.018
0.030
0.024
I
D(on)
g
FS
40
30
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 1)
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
1160
250
100
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
Ω
9
11
23
8
17
20
37
16
17
ns
ns
ns
ns
nC
nC
nC
V
DS
= 15 V,
I
D
= 20 A, V
GS
= 5 V
12
3.2
3.7
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 20 A
(Note 1)
(Note 1)
40
0.95
1.2
A
V
Note:
1.
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
FDP6030BL/FDB6030BL Rev.C
FDP6030BL/FDB6030BL
Typical Characteristics
80
I
D
, DRAIN-SOURCE CURRENT (A)
70
60
50
40
30
20
10
0
0
1
2
3
4
5
3.5V
2 .6
R
DS(ON)
, N O R M A LIZ ED
D R A IN -SO U RC E O N -R E SISTA N C E
2 .4
2 .2
2
1 .8
1 .6
1 .4
1 .2
1
0 .8
0
10
20
30
40
50
3 .5 V
4 .0 V
4 .5 V
5 .0 V
7 .0 V
10V
V
GS
= 3 .0 V
V
GS
= 10V
6.0V
5.0V
4.5V
4.0V
3.0V
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, D R AIN C U R R EN T (A )
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.06
R
DS(ON)
, ON-RESISTANCE (OHM)
1 .8
R
DS(ON)
, N O R M A LIZE D
D RA IN -S O U RC E O N -R ES ISTA N C E
1 .6
1 .4
1 .2
1
0 .8
0 .6
-5 0
-2 5
0
25
50
75
1 00
o
I
D
= 2 0A
V
GS
= 1 0V
I
D
= 10 A
0.05
0.04
0.03
T
A
= 125 C
0.02
0.01
0
T
A
= 25 C
o
o
1 25
1 50
2
4
6
8
10
T
J
, JUN C TIO N TE M P ER A TU RE ( C )
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
50
V
DS
= 5V
I
D
, DRAIN CURRENT (A)
40
25 C
125 C
30
o
o
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
I
S
, REVERSE DRAIN CURRENT (A)
V
GS
= 0V
10
T
A
= 125 C
1
25 C
0.1
0.01
0.001
0.0001
-55 C
o
o
o
T
A
= -55 C
o
20
10
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDP6030BL/FDB6030BL Rev.C
FDP6030BL/FDB6030BL
Typical Characteristics
10
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 20A
8
(continued)
1600
V
DS
= 5V
15V
10V
CAPACITANCE (pF)
1400
1200
1000
800
600
400
200
0
C
OSS
C
RSS
0
5
10
15
20
C
ISS
f = 1 MHz
V
GS
= 0 V
6
4
2
0
0
5
10
15
20
25
25
30
Q
g
, GATE CHARGE (nC)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate-Charge Characteristics.
1000
V
GS
= 10V
SINGLE PULSE
I
D
, DRAIN CURRENT (A)
R
θ
JC
= 2.5 C/W
100
T
C
= 25 C
R
DS(ON)
LIMIT
10
10ms
100ms
DC
o
o
Figure 8. Capacitance Characteristics.
2500
2000
POWER (W)
10
µ
s
100
µ
s
1ms
SINGLE PULSE
R
θ
JC
=2.5°C/W
T
C
= 25°C
1500
1000
500
1
0.1
1
10
100
0
0.01
0.1
1
10
100
1,000
SINGLE PULSE TIME (mSEC)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
0.5
0.3
0.2
0.1
0.2
D = 0.5
R
θ
JC
(t) = r(t) * R
θ
JC
R
θ
JC
= 2.5 °C/W
P(pk)
0.1
0.05
0.05
0.02
Single Pulse
t
1
0.03
0.01
0.02
0.01
0.01
t
2
T
J
- T
C
= P * R
θ
JC (t)
Duty Cycle, D = t
1
/t
2
0.1
1
t
1
,TIME (ms)
10
100
1000
Figure 11. Transient Thermal Response Curve.
FDP6030BL/FDB6030BL Rev.C
TO-220 Tape and Reel Data and Package Dimensions
TO-220 Tube Packing
Configuration:
Figur e 1.0
Packaging Description:
TO-220 parts are ship ped normally in tube. The tube is
made of PVC plastic treated with anti -stati c agent.These
tubes in standard option are placed inside a dissipative
plastic bag, barcode labeled, and placed inside a box
made of recyclable corrugated pa per. One box contains
two ba gs maximum (see fig. 1.0). And one or several o f
these boxes are placed inside a labeled shipp ing bo x
whic h c omes in different sizes dependi ng on the nu mber
of parts ship ped. The other option comes in bulk as
described in the Packagin g Information table. The unit s in
this option are placed inside a small box laid w ith anti-
static bubble sheet. These smaller boxes are individually
labeled and placed ins ide a larger box (see fig. 3.0).
These larger or intermediate boxes then will b e placed
finally inside a labeled shipping box whic h still comes in
different sizes depending on the number of units shipped.
45 unit s per Tube
12 Tubes per Bag
530mm x 130mm x 83mm
Intermediate box
2 bag s per Box
Conduct ive Plasti c B ag
TO-220 Packaging
Information:
Figure 2.0
TO-220 Packaging Information
Packaging Option
Packaging type
Qty per Tube/Box
Box Dimension (mm)
Max qty per Box
Weight per unit (gm)
Note/Comments
Standard
(no f l ow code )
FSCINT Labe l samp le
FAIRCHILD SEMICONDUCTOR CORPORATION
1080 uni ts maxi mum
quant it y per bo x
S62Z
BULK
300
LOT:
CBVK741B019
QTY:
HTB:B
1080
NSID:
FDP7060
SPEC:
Rail/Tube
45
530x130x83
1,080
1.4378
D/C1:
D9842
SPEC REV:
QA REV:
B2
114x102x51
1,500
1.4378
FSCINT Label
(FSCINT)
TO-220 bulk Packing
Configuration:
Figure 3.0
FSCINT Label
An ti-stati c
Bubbl e Sheet s
530mm x 130mm x 83mm
Intermediate box
1500 uni ts maxi mum
quant it y per intermediate box
300 units per
EO70 box
114mm x 102mm x 51mm
EO70 Immed iate Box
5 EO70 boxe s per per
Interm ediate Bo x
FSCINT Label
TO-220 Tube
Configuration:
Figure 4.0
Note: All dim ensions are in inches
0.123
+0.001
-0.003
0.165
0.080
0.450
±.030
1.300
±.015
0.032
±.003
0.275
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
F
9852
NDP4060L
0.160
20.000
+0.031
-0.065
0.800
0.275
August 1999, Rev. B
RF/Wirelessly
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