Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
FEATURES
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
PBYR20100CT, PBYR20100CTB series
SYMBOL
QUICK REFERENCE DATA
V
R
= 60 V/ 80 V/ 100 V
I
O(AV)
= 20 A
V
F
≤
0.7 V
a1
1
k 2
a2
3
GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a conventional leaded plastic package and a surface mounting
plastic package. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The PBYR20100CT series is supplied in the SOT78 conventional leaded package.
The PBYR20100CTB series is supplied in the SOT404 surface mounting package.
PINNING
PIN
1
2
3
tab
DESCRIPTION
anode 1 (a)
cathode (k)
1
anode 2 (a)
cathode (k)
SOT78 (TO220AB)
tab
SOT404
tab
2
1 23
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
PBYR20
PBYR20
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified output
current (both diodes
conducting)
Repetitive peak forward
current per diode
Non-repetitive peak forward
current per diode
Peak repetitive reverse
surge current per diode
Operating junction
temperature
Storage temperature
-
-
T
mb
≤
139 ˚C
square wave;
δ
= 0.5;
T
mb
≤
133 ˚C
square wave;
δ
= 0.5;
T
mb
≤
133 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; T
j
= 125 ˚C prior to
surge; with reapplied V
RRM(max)
pulse width and repetition rate
limited by T
j max
-
-
-
-
-
-
-
- 65
MIN.
MAX.
60CT 80CT 100CT
60CTB 80CTB 100CTB
60
80
100
60
60
80
80
20
20
135
150
1
150
175
100
100
UNIT
V
V
V
A
A
A
A
A
˚C
˚C
I
RRM
T
j
T
stg
1. It is not possible to make connection to pin 2 of the SOT404 package.
November 1998
1
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
R
th j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
PBYR20100CT, PBYR20100CTB series
MIN.
-
-
-
-
TYP. MAX. UNIT
-
-
60
50
2
1
-
-
K/W
K/W
K/W
K/W
per diode
both diodes
SOT78 package in free air
SOT404 package, pcb mounted, minimum
footprint, FR4 board
ELECTRICAL CHARACTERISTICS
All characteristics are per diode at T
j
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER
V
F
I
R
C
d
Forward voltage
Reverse current
Junction capacitance
CONDITIONS
I
F
= 10 A; T
j
= 125˚C
I
F
= 20 A; T
j
= 125˚C
I
F
= 20 A
V
R
= V
RWM
V
R
= V
RWM
; T
j
= 125˚C
V
R
= 5 V; f = 1 MHz, T
j
= 25˚C to 125˚C
MIN.
-
-
-
-
-
-
TYP. MAX. UNIT
0.61
0.74
0.88
5
5
420
0.7
0.85
0.95
150
15
-
V
V
V
µA
mA
pF
November 1998
2
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR20100CT, PBYR20100CTB series
15
PF / W
Vo = 0.550 V
Rs = 0.015 Ohms
PBYR10100
Tmb / C
120
100
IR / mA
PBYR10100
D = 1.0
10
0.5
0.2
0.1
5
I
t
p
D=
t
p
T
t
10 150 C
130
125 C
1 100 C
140
0.1
0.01
75 C
Tj = 50 C
0
0
T
5
IF(AV) / A
10
150
15
0
50
VR/ V
100
Fig.1. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
√
D.
PBYR10100
Tmb / C
130
a = 1.57
2.2
6
4
4
142
2.8
1.9
Fig.4. Typical reverse leakage current per diode;
I
R
= f(V
R
); parameter T
j
10
PF / W
Vo = 0.550 V
Rs = 0.015 Ohms
Cd/ pF
10000
PBYR20100CT
8
134
1000
138
100
2
146
0
0
2
4
6
IF(AV) / A
8
150
10
10
1
10
VR/ V
100
Fig.2. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
IF / A
50
Tj = 25 C
40
Tj = 125 C
PBYR10100
Fig.5. Typical junction capacitance per diode;
C
d
= f(V
R
); f = 1 MHz; T
j
= 25˚C to 125 ˚C.
10
Transient thermal impedance, Zth j-mb (K/W)
1
Typ
30
Max
0.1
20
0.01
P
D
t
p
D=
t
p
T
t
10
T
0
0
0.5
1
VF / V
1.5
2
0.001
1us
10us
100us 1ms
10ms 100ms
1s
10s
pulse width, tp (s)
PBYR20100CT
Fig.3. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.6. Transient thermal impedance per diode;
Z
th j-mb
= f(t
p
).
November 1998
3
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
PBYR20100CT, PBYR20100CTB series
4,5
max
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max
1 2 3
(2x)
2,54 2,54
0,9 max (3x)
0,6
2,4
Fig.7. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
November 1998
4
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
10.3 max
PBYR20100CT, PBYR20100CTB series
4.5 max
1.4 max
11 max
15.4
2.5
0.85 max
(x2)
2.54 (x2)
0.5
Fig.8. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5
2.0
3.8
5.08
Fig.9. SOT404 : soldering pattern for surface mounting.
Notes
1. Epoxy meets UL94 V0 at 1/8".
November 1998
5
Rev 1.300
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