PHOTONIC
DETECTORS INC.
High-Power GaAIAs Infrared Emitters
Peak Wavelength, 880 nm,Type
PDI-E806
INDUSTRY EQUIVALENTS
SFH485 & LTE-5238
Ø0.228 [5.80]
0.020 [0.51] SQ
2 PLACES
1.04 [26.5]
C
L
0.100 [2.54]
C
L
CATHODE
ANODE
BLUE PLASTIC
0.300 [7.62]
0.338 [8.60]
BEAM
ANGLE 40°
Ø0.195 [4.95]
PACKAGE DIMENSIONS
inch (mm)
0.98 [25.0]
0.169 [4.29]
CHIP POSITION
BLUE TINT T 1
3
/
4
PACKAGE
40
O
HALF INTENSITYBEAM ANGLE
Pd
I
FP
I
FP
V
R
To & Ts
TS
Power Dissipation
Continuous Forward Current
Peak Forward Current (10µs, 10Hz)
Reverse voltage
Storage & Operating Temperature
Soldering Temperature*
-55
160
100
2.5
5
+100
+240
mW
mA
A
V
o
C
o
C
*1/16 inch from case for 3 secs max
RELATIVE POWER OUTPUT (%)
DESCRIPTION:
The
PDI-E806
infrared emitting
FEATURES
diode uses high reliability liquid phase epitaxially
High output power
grown GaAlAS. Optimized for high power, high
High reliablity
efficiency. This 880 nm I.R. emitter is packaged in
Medium emission angle
a low cost T 1
3
/
4
[5 mm diameter]
package.
ABSOLUTE MAXIMUM RATING
(TA=25
O
C unless otherwise noted)
SYMBOL
PARAMETER
MIN
MAX
UNITS
APPLICATIONS
Photoelectric switches
Infrared sources
Automatic controls
TYPICAL RADIATION PATTERN
ELECTRO-OPTICAL CHARACTERISTICS
(TA=25
O
C unless otherwise noted)
SYMBOL CHARACTERISTIC
TEST CONDITIONS
MIN
TYP
I
E
V
F
V
R
D
λ
BEAM ANGLE,
θ
(deg)
MAX
2.0
886
UNITS
mW/Sr
V
V
nm
nm
pF
µ
S
m
S
λ
P
C
t
t
r
t
f
Radiant Intensity
Forward Voltage
Reverse Breakdown Voltage
Peak Wavelength
Spectral Halfwidth
Terminal Capacitance
Rise Time
Fall Time
RELATIVE POWER OUTPUT (%)
I
F
= 50 mA
I
F
= 100 mA
I
F
= 100
µA
I
F
= 50 mA
I
F
= 50 mA
V
R
= 0 V,f = 1 MHz
I
F
= 100 mA
I
F
= 50 mA
TYPICAL POWER OUTPUT
DEGRADATION CURVE
30
5
883
50
1.6
30
880
70
20
1.5
0.8
RELATIVE POWER OUTPUT (&)
POWER OUTPUT vs
FORWARD CURRENT
POWER OUTPUT, P
O
(mW)
SPECTRAL OUTPUT
FORWARD CURRENT, I
F
(mA)
STRESS TIME (hrs)
WAVELENGTH,
λ
(nm)
Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications
are subject to change without notice. Optical power and radiant intensity measured using uncapped dimpled TO-46 into integrating sphere.
[FORM NO. 100-PDI-E806 REV A]
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