PHOTONIC
DETECTORS INC.
High-Power GaAIAs Infrared Emitter Chip
Peak Wavelength, 880 nm,Type
PDI-E800
INDUSTRY EQUIVALENT
OPC226
0.013 [0.33] SQ
PACKAGE DIMENSIONS
inch (mm)
Ø0.005 [Ø0.13]
BOND PAD
CATHODE
GOLD CONTACT
CATHODE
0.008 [0.20]
GOLD CONTACT
ANODE
Pd
I
FP
I
FP
V
R
To & Ts
TS
Power Dissipation
Continuous Forward Current
Peak Forward Current (10µs, 10Hz)
Reverse voltage
Light Current
Soldering Temperature*
-35
160
100
2.5
5
+100
+240
mW
mA
A
V
o
C
o
C
*1/16 inch from case for 3 secs max
RELATIVE POWER OUTPUT (%)
DESCRIPTION:
The
PDI-E800
infrared emitting
FEATURES
diode uses high reliability liquid phase epitaxi-
High output power
ally grown GaAlAs. They are optimized for high
Low degradation
power, high efficiency, and low degradation.
High reliability
ABSOLUTE MAXIMUM RATING
(TA=25
O
C unless otherwise noted)
SYMBOL
PARAMETER
MIN
MAX
UNITS
APPLICATIONS
Photoelectric switches
Solid state switches
Infrared sources
SPECTRAL OUTPUT
ELECTRO-OPTICAL CHARACTERISTICS
(TA=25
O
C unless otherwise noted)
SYMBOL CHARACTERISTIC
TEST CONDITIONS
MIN
TYP
P
O
V
F
V
R
Output Power
Forward Voltage
Reverse Breakdown Voltage
Peak Wavelength
Spectral Halfwidth
Terminal Capacitance
Rise Time
Fall Time
RELATIVE POWER OUTPUT (%)
WAVELENGTH,
λ(nm)
MAX
1.90
895
UNITS
mW
V
V
nm
nm
pF
µ
S
m
S
λ
P
D
λ
D
C
t
t
r
t
f
POWER OUTPUT, P
O
(mW)
I
F
= 100 mA
I
F
= 100 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 50 mA
V
R
= 0 V,f = 1 MHz
I
F
= 100 mA
I
F
= 100 mA
TYPICAL POWER OUTPUT
DEGRADATION CURVE
20
5
865
24
1.50
30
880
50
30
0.6
0.5
RELATIVE POWER OUTPUT
POWER OUTPUT vs
FORWARD CURRENT
POWER OUTPUT
vs TEMPERATURE
FORWARD CURRENT, I
F
(mA)
STRESS TIME (hrs)
AMBIENT TEMPERATURE (
o
C)
Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications
are subject to change without notice.
Analog electronics
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