F5D1/2/3
AlGaAs INFRARED EMITTING DIODE
PACKAGE DIMENSIONS
0.209 (5.31)
0.184 (4.67)
DESCRIPTION
• The F5D series is a 880 nm LED in a
narrow angle, TO-46 package.
0.030 (0.76)
NOM
0.255 (6.48)
FEATURES
1.00 (25.4)
MIN
• Good optical to mechanical alignment
ANODE
(CASE)
• Mechanically and wavelength matched
to the TO-18 series phototransistor
• Hermetically sealed package
• High irradiance level
SCHEMATIC
ANODE
(Connected
To Case)
CATHODE
3
0.100 (2.54)
0.050 (1.27)
1
1
0.040 (1.02)
0.040 (1.02)
45°
3
Ø0.020 (0.51) 2X
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 13.0 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning
agents.
5. Soldering iron tip
1/16”
(1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension
7. Total power output, P
O
, is the total power radiated by the device into
a solid angle of 2
!
steradians.
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
(3,4,5 and 6)
Soldering Temperature (Flow)
(3,4 and 6)
Continuous Forward Current
Forward Current (pw, 10µs; 100Hz)
Forward Current (pw, 1µs; 200Hz)
Reverse Voltage
Power Dissipation (T
A
= 25°C)
(1)
Power Dissipation (T
C
= 25°C)
(2)
(T
A
= 25°C unless otherwise specified)
Symbol
T
OPR
T
STG
T
SOL-I
T
SOL-F
I
F
I
F
I
F
V
R
P
D
P
D
Rating
-65 to +125
-65 to +150
240 for 5 sec
260 for 10 sec
100
3
10
3
170
1.3
Unit
°C
°C
°C
°C
mA
A
A
V
mW
W
ELECTRICAL / OPTICAL CHARACTERISTICS
PARAMETER
TEST CONDITIONS
(T
A
=25°C) (All measurements made under pulse conditions)
MIN
TYP
MAX
UNITS
SYMBOL
Peak Emission Wavelength
Emission Angle at 1/2 Power
Forward Voltage
Reverse Leakage Current
Total Power F5D1
(7)
Total Power F5D2
(7)
Total Power F5D3
(7)
Rise Time 0-90% of output
Fall Time 100-10% of output
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
V
R
= 3 V
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
"
P
#
V
F
I
R
P
O
P
O
P
O
t
r
t
f
—
—
—
—
12.0
9.0
10.5
—
—
880
±8
—
—
—
—
—
1.5
1.5
—
—
1.7
10
—
—
—
—
—
nm
Deg.
V
µA
mW
mW
mW
µs
µs
2001 Fairchild Semiconductor Corporation
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4/24/01
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F5D1/2/3
AlGaAs INFRARED EMITTING DIODE
Figure 1. Power Output vs. Input Current
10
P
O
, NORMALIZED POWER OUTPUT
P
O
, NORMALIZED POWER OUTPUT
20
10
8
6
4
2
I
F
= 100 mA
1
0.8
0.6
0.4
0.2
0.1
-25
NORMALIZED TO
I
F
= 100 mA, T
A
= 25°C
P
W
= 80
µsec,
f = 30 Hz
0
25
50
75
,
100
125
150
Figure 2. Power Output vs. Temperature
I
F
= 1 A
1.0
0.1
NORMALIZED TO
I
F
= 100 mA
T
A
= 25°C
PULSED INPUTS
P
W
= 80
µsec
RR = 30 Hz
10
100
1000
0.01
0.001
1
I
F
, INPUT CURRENT (mA)
T
A
, AMBIENT TEMPERATURE (°C)
Figure 3. Forward Voltage vs. Temperature
4
I
F
= 1 A
P
W
= 80
µsec
F = 30 Hz
P
O
, RELATIVE OUTPUT (%)
100
Figure 4. Typical Radiation Pattern
V
F
, FORWARD VOLTAGE (volts)
3
80
F5D
60
I
F
= 0.5 A
2
I
F
= 100 mA
I
F
= 10 mA
40
20
1
-25
0
25
50
75
100
125
150
0
-80
-60
-40
-20
0
20
40
60
80
100
T
A
, AMBIENT TEMPERATURE (°C)
θ,
DISPLACEMENT FROM OPTICAL AXIS (DEGREES)
Figure 5. Output vs. Input with L14G Detector
100
I
F
I
L
L14G
5V
F5D1
Figure 6. Output vs. Wavelength
120
100
P
O
, RELATIVE OUTPUT (%)
80
60
40
20
I
F
= 100 mA
T
A
= 25°C
I
L
, OUTPUT CURRENT (mA)
10
1.0
TYPICAL OUPUTS
AT A DISTANCE OF
10 CM PULSED
INPUTS, P
W
= 80
µsec
RR = 30 Hz
TYPICAL SPECTRAL
RESPONSE OF SILICON
PHOTOSENSORS
F5D
0.1
0.01
10
100
I
F
, INPUT CURRENT (mA)
1000
700
800
900
1000
λ,
WAVE LENGTH (nm)
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F5D1/2/3
AlGaAs INFRARED EMITTING DIODE
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HERE-
IN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
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Embedded System
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