PC3Q71xNIP Series
PC3Q71xNIP
Series
∗
Mini-flat Half Pitch 4-channel
Package, High CMR,
Low Input Current Photocoupler
1-channel package type is also available.
(model No.
PC3H71xNIP Series)
■
Description
PC3Q71xNIP Series
contains a IRED optically cou-
pled to a phototransistor.
It is packaged in a 4 channel mini-flat, half pitch
type.
Input-output isolation voltage(rms) is 2.5kV.
Collector-emitter voltage is 80V
(∗)
, CTR is 100% to
600% at input current of 0.5mA and CMR : MIN.
10kV/µs.
■
Agency approvals/Compliance
1. Recognized by UL1577 (Double protection isolation),
file No. E64380 (as model No.
PC3Q71)
2. Package resin : UL flammability grade (94V-0)
■
Applications
1. Programmable controllers
2. Facsimiles
3. Telephones
■
Features
1. 4ch Mini-flat Half pitch package (Lead pitch : 1.27mm)
2. Double transfer mold package (Ideal for Flow Solder-
ing)
3. Low input current type (I
F
=0.5mA)
4. High collector-emitter voltage (V
CEO
: 80V
(∗)
)
5. High noise immunity due to high common mode re-
jection voltage (CMR : MIN. 10kV/µs)
6. Isolation voltage between input and output (V
iso(rms)
:
2.5kV)
(*) Up to Date code "P9" (September 2002) V
CEO
: 70V.
Notice The content of data sheet is subject to change without prior notice.
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
1
Sheet No.: D2-A02601EN
Date Sep. 30. 2003
© SHARP Corporation
PC3Q71xNIP Series
■
Absolute Maximum Ratings
Parameter
Symbol
Forward current
I
F
*1
Peak forward current
I
FM
Reverse voltage
V
R
Power dissipation
P
Collector-emitter voltage V
CEO
Emitter-collector voltage V
ECO
I
C
Collector current
Collector power dissipation
P
C
P
tot
Total power dissipation
T
opr
Operating temperature
T
stg
Storage temperature
*2
Isolation voltage
V
iso (rms)
*3
Soldering temperature
T
sol
(T
a
=25˚C)
Rating
Unit
10
mA
200
mA
V
6
15
mW
*4
V
80
6
V
50
mA
mW
150
mW
170
−30
to
+100
˚C
−40
to
+125
˚C
2.5
kV
˚C
260
*1 Pulse width≤100µs, Duty ratio : 0.001
*2 40 to 60%RH, AC for 1 minute, f=60Hz
*3 For 10s
*4 Up to Date code "P9" (September2002) V
CEO
: 70V
■
Electro-optical Characteristics
Parameter
Symbol
Forward voltage
V
F
I
R
Reverse current
Terminal capacitance
C
t
Collector dark current
I
CEO
Collector-emitter breakdown voltage BV
CEO
Emitter-collector breakdown voltage BV
ECO
Collector current
I
C
Collector-emitter saturation voltage V
CE (sat)
Isolation resistance
R
ISO
C
f
Floating capacitance
t
r
Rise time
Response time
Fall time
t
f
Common mode rejection voltage
CMR
Conditions
I
F
=10mA
V
R
=4V
V=0, f=1kHz
V
CE
=50V,
I
F
=0
I
C
=0.1mA,
I
F
=0
I
E
=10µA,
I
F
=0
I
F
=0.5mA,
V
CE
=5V
I
F
=10mA,
I
C
=1mA
DC500V, 40 to 60%RH
V=0, f=1MHz
Output
Input
Input
Output
Transfer
charac-
teristics
V
CE
=2V,
I
C
=2mA,
R
L
=100Ω
T
a
=25˚C,
R
L
=470Ω,
V
CM
=1.5kV(peak)
I
F
=0,
V
CC
=9V,
V
np
=100mV
MIN.
−
−
−
−
*5
80
6
0.5
−
5×10
10
−
−
−
10
TYP.
1.2
−
30
−
−
−
−
−
1×10
11
0.6
4
3
−
MAX.
1.4
10
250
100
−
−
3.0
0.2
−
1.0
18
18
−
(T
a
=25˚C)
Unit
V
µA
pF
nA
V
V
mA
V
Ω
pF
µs
µs
kV/µs
*5 Up to Date code "P9" (September 2002) BV
CEO
≥70V.
Sheet No.: D2-A02601EN
4
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