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IRHN4150

Description
34 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size285KB,12 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

IRHN4150 Overview

34 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET

IRHN4150 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionCHIP CARRIER, R-CBCC-N3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)500 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)34 A
Maximum drain current (ID)34 A
Maximum drain-source on-resistance0.07 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-CBCC-N3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)150 W
Maximum pulsed drain current (IDM)136 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD - 90720C
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-1)
Product Summary
Part Number
IRHN7150
IRHN3150
IRHN4150
IRHN8150
Radiation Level R
DS(on)
100K Rads (Si) 0.065Ω
300K Rads (Si) 0.065Ω
600K Rads (Si) 0.065Ω
1000K Rads (Si) 0.065Ω
HEXFET
®
I
D
34A
34A
34A
34A
IRHN7150
JANSR2N7268U
100V, N-CHANNEL
REF: MIL-PRF-19500/603
®
RAD Hard HEXFET
TECHNOLOGY
QPL Part Number
JANSR2N7268U
JANSF2N7268U
JANSG2N7268U
JANSH2N7268U
SMD-1
International Rectifier’s RADHard
technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
PCKG. Mounting Surface Temp.
Weight
For footnotes refer to the last page
34
21
136
150
1.2
±20
500
34
15
5.5
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 ( for 5s)
2.6 (Typical )
g
www.irf.com
1
02/01/01

IRHN4150 Related Products

IRHN4150 IRHN3150 JANSF2N7268U JANSG2N7268U JANSH2N7268U JANSR2N7268U
Description 34 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET 34 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET 34 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET 34 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET 34 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET 34 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
Is it lead-free? Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon )
package instruction CHIP CARRIER, R-CBCC-N3 CHIP CARRIER, R-CBCC-N3 CHIP CARRIER, R-CBCC-N3 CHIP CARRIER, R-CBCC-N3 CHIP CARRIER, R-CBCC-N3 CHIP CARRIER, R-CBCC-N3
Contacts 3 3 3 3 3 3
Reach Compliance Code compli unknow compli compli compliant unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 500 mJ 500 mJ 500 mJ 500 mJ 500 mJ 500 mJ
Shell connection DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 100 V 100 V 100 V 100 V 100 V 100 V
Maximum drain current (ID) 34 A 34 A 34 A 34 A 34 A 34 A
Maximum drain-source on-resistance 0.07 Ω 0.07 Ω 0.07 Ω 0.07 Ω 0.07 Ω 0.07 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-CBCC-N3 R-CBCC-N3 R-CBCC-N3 R-CBCC-N3 R-CBCC-N3 R-CBCC-N3
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form CHIP CARRIER CHIP CARRIER CHIP CARRIER CHIP CARRIER CHIP CARRIER CHIP CARRIER
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 136 A 136 A 136 A 136 A 136 A 136 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Is it Rohs certified? incompatible - incompatible incompatible incompatible -
JESD-609 code e0 - e0 e0 e0 -
Terminal surface Tin/Lead (Sn/Pb) - TIN LEAD TIN LEAD Tin/Lead (Sn/Pb) -
Other features - - RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED
Guideline - - MIL-19500/603 MIL-19500/603 MIL-19500/603 MIL-19500/603
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