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FRK9150D

Description
Power Field-Effect Transistor, 26A I(D), 100V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE
CategoryDiscrete semiconductor    The transistor   
File Size87KB,8 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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FRK9150D Overview

Power Field-Effect Transistor, 26A I(D), 100V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE

FRK9150D Parametric

Parameter NameAttribute value
Objectid1544044682
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)26 A
Maximum drain-source on-resistance0.125 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-204AE
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)78 A
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
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