PC3Q510NIP
PC3Q510NIP
∗
1-channel package type is also available.
(model No.
PC3H510NIP)
Mini-flat Half Pitch 4-channel Package
Darlington Phototransistor Output,
Low Input Current Photocoupler
■
Description
PC3Q510NIP
contains a IRED optically coupled to a
phototransistor.
It is packaged in a 4 channel Mini-flat package, Half
pitch type.
Input-output isolation voltage(rms) is 2.5kV.
CTR is MIN. 600% at input current of 0.5mA.
■
Agency approvals/Compliance
1. Recognized by UL1577 (Double protection isolation),
file No. E64380 (as model No.
PC3Q51)
2. Package resin : UL flammability grade (94V-0)
■
Applications
1. Programmable controllers
2. Facsimiles
3. Telephones
■
Features
1. 4-channel Mini-flat Half pitch package (Lead pitch :
1.27mm)
2. Double transfer mold package (Ideal for Flow Solder-
ing)
3. Low input current type (I
F
=0.5mA)
4. Darlington phototransistor output (CTR : MIN. 600%
at I
F
=0.5mA,V
CE
=2V)
5. Isolation voltage (V
iso(rms)
:
2.5kV)
Notice The content of data sheet is subject to change without prior notice.
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
1
Sheet No.: D2-A02401EN
Date Sep. 30. 2003
© SHARP Corporation
PC3Q510NIP
■
Absolute Maximum Ratings
Parameter
Symbol
Forward current
I
F
*1
Peak forward current
I
FM
Reverse voltage
V
R
Power dissipation
P
Collector-emitter voltage V
CEO
Emitter-collector voltage V
ECO
I
C
Collector current
Collector power dissipation
P
C
P
tot
Total power dissipation
T
opr
Operating temperature
T
stg
Storage temperature
*2
Isolation voltage
V
iso (rms)
*3
Soldering temperature
T
sol
(T
a
=25˚C)
Rating
Unit
10
mA
200
mA
V
6
15
mW
V
35
6
V
80
mA
150
mW
170
mW
−30
to
+100
˚C
−40
to
+125
˚C
2.5
kV
260
˚C
*1 Pulse width≤100µs, Duty ratio : 0.001
*2 40 to 60%RH, AC for 1 minute, f=60Hz
*3 For 10s
■
Electro-optical Characteristics
Parameter
Symbol
Forward voltage
V
F
I
R
Reverse current
Terminal capacitance
C
t
Collector dark current
I
CEO
Collector-emitter breakdown voltage BV
CEO
Emitter-collector breakdown voltage BV
ECO
Current transfer ratio
I
C
Collector-emitter saturation voltage V
CE (sat)
Isolation resistance
R
ISO
Floating capacitance
C
f
Rise time
t
r
Response time
Fall time
t
f
Conditions
I
F
=5mA
V
R
=4V
V=0, f=1kHz
V
CE
=10V,
I
F
=0
I
C
=0.1mA,
I
F
=0
I
E
=10µA,
I
F
=0
I
F
=0.5mA,
V
CE
=2V
I
F
=1mA,
I
C
=2mA
DC500V, 40 to 60%RH
V=0, f=1MHz
Output
Input
Input
Output
Transfer
charac-
teristics
V
CE
=2V,
I
C
=10mA,
R
L
=100Ω
MIN.
−
−
−
−
35
6
3
−
5×10
10
−
−
−
TYP.
1.2
−
30
−
−
−
14
−
1×10
11
0.6
60
53
MAX.
1.4
10
250
1000
−
−
60
1.0
−
1.0
300
250
(T
a
=25˚C)
Unit
V
µA
pF
nA
V
V
mA
V
Ω
pF
µs
µs
Sheet No.: D2-A02401EN
4
PC3Q510NIP
Fig.1 Forward Current vs. Ambient
Temperature
Fig.2 Diode Power Dissipation vs. Ambient
Temperature
10
Diode power dissipation P (mW)
15
Forward current I
F
(mA)
10
5
5
0
−30
0
25
50
75
100
125
0
−30
0
25
50
75
100
125
Ambient temperature T
a
(˚C)
Ambient temperature T
a
(˚C)
Fig.3 Collector Power Dissipation vs.
Ambient Temperature
Collector power dissipation P
C
(mW)
Fig.4 Total Power Dissipation vs. Ambient
Temperature
Total power dissipation P
tot
(mW)
0
25
50
75
100
125
200
200
170
150
150
100
100
50
50
0
−30
0
−30
0
25
50
75
100
125
Ambient temperature T
a
(˚C)
Ambient temperature T
a
(˚C)
Fig.5 Peak Forward Current vs. Duty Ratio
2 000
Peak forward current I
FM
(mA)
1 000
500
Pulse width≤100µs
T
a
=25˚C
Fig.6 Forward Current vs. Forward Voltage
100
Forward current I
F
(mA)
10
T
a
=100˚C
T
a
=75˚C
50˚C
25˚C
0˚C
−25˚C
200
100
50
1
20
10
5
10
−3
2
5
10
−2
2
5
10
−1
0.1
2
5
1
0
0.5
1.0
1.5
2.0
Duty ratio
Forward voltage V
F
(V)
Sheet No.: D2-A02401EN
5
Embedded System
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