K9F2808U0C
K9F2816U0C
FLASH MEMORY
Document Title
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
Revision History
Revision No. History
0.0
1.0
Initial issue.
TBGA PKG Dimension Change
48-Ball, 6.0mm x 8.5mm --> 63-Ball, 9.0mm x 11.0mm
1.A3 Pin assignment of TBGA Package is changed.(Page 4)
(before) NC --> (after) Vss
2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 32)
3. Add the data protection Vcc guidence for 1.8V device - below about
1.1V. (Page 33)
The min. Vcc value 1.8V devices is changed.
K9F28XXQ0C : Vcc 1.65V~1.95V --> 1.70V~1.95V
2.2
Pb-free Package is added.
K9F2808U0C-FCB0,FIB0
K9F2808Q0C-HCB0,HIB0
K9F2816U0C-HCB0,HIB0
K9F2816U0C-PCB0,PIB0
K9F2816Q0C-HCB0,HIB0
K9F2808U0C-HCB0,HIB0
K9F2808U0C-PCB0,PIB0
Some AC parameters are changed(K9F28XXQ0C).
tWC tWH tWP tRC tREH tRP tREA tCEA
Before
After
2.4
45
60
15
20
25
40
50
60
15
20
25
40
30
40
45
55
Draft Date
Apr. 15th 2002
Sep. 5th 2002
Remark
Advance
Advance
2.0
Dec.10th 2002
Preliminary
2.1
Mar. 6th 2003
Mar. 13rd 2003
2.3
Mar. 26th 2003
1. New definition of the number of invalid blocks is added.
(Minimum 502 valid blocks are guaranteed for each contiguous 64Mb
memory space)
2.
Note is added.
(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for
durations of 20 ns or less.)
May. 24th 2003
2.5
2.6
1. K9F2808U(Q)0C-DC(I)B0,K9F2816U(Q)0C-DC(I)B0 is deleted.
2. tWC is changed.
45ns(Before) ---> 50ns(After)
3. Minimum valid block number is changed.
1004(Before) --> 1009(After)
1. Minimum valid block number is changed.
1009(Before) --> 1004(After)
Oct. 10th 2003
Note : For more detailed features and specifications including FAQ, please refer to Samsung’ Flash web site.
s
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
1
Package Dimensions
Document Title
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
FLASH MEMORY
Revision History
Revision No. History
2.7
1. Add the Protrusion/Burr value in WSOP1 PKG Diagram
2. PKG(TSOP1, WSOP1) Dimension Change
Draft Date
May 21th 2004
Note : For more detailed features and specifications including FAQ, please refer to Samsung’ Flash web site.
s
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
2
K9F2808U0C
K9F2816U0C
FLASH MEMORY
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
PRODUCT LIST
Part Number
K9F2808U0C-Y,P
K9F2808U0C-V,F
K9F2816U0C-Y,P
2.7 ~ 3.6V
Vcc Range
Organization
X8
X16
PKG Type
TSOP1
WSOP1
TSOP1
FEATURES
•
Voltage Supply : 2.7 ~ 3.6 V
•
Organization
- Memory Cell Array
- X8 device(K9F2808U0C) : (16M + 512K)bit x 8bit
- X16 device(K9F2816U0C) : (8M + 256K)bit x 16bit
- Data Register
- X8 device(K9F2808U0C) : (512 + 16)bit x 8bit
- X16 device(K9F2816U0C) : (256 + 8)bit x16bit
•
Automatic Program and Erase
- Page Program
- X8 device(K9F2808U0C) : (512 + 16)Byte
- X16 device(K9F2816U0C) : (256 + 8)Word
- Block Erase :
- X8 device(K9F2808U0C) : (16K + 512)Byte
- X16 device(K9F2816U0C) : ( 8K + 256)Word
•
Page Read Operation
- Page Size
- X8 device(K9F2808U0C) : (512 + 16)Byte
- X16 device(K9F2816U0C) : (256 + 8)Word
- Random Access
: 10µs(Max.)
- Serial Page Access : 50ns(Min.)
•
Fast Write Cycle Time
- Program time : 200µs(Typ.)
- Block Erase Time : 2ms(Typ.)
•
Command/Address/Data Multiplexed I/O Port
•
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
•
Reliable CMOS Floating-Gate Technology
- Endurance
: 100K Program/Erase Cycles
- Data Retention : 10 Years
•
Command Register Operation
•
Unique ID for Copyright Protection
•
Package
- K9F28XXU0C-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F28XXU0C-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - Pb-free Package
- K9F2808U0C-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
- K9F2808U0C-FCB0/FIB0
48 - Pin WSOP I (12X17X0.7mm) - Pb-free Package
* K9F2808U0C-V/F(WSOPI ) is the same device as
K9F2808U0C-Y/P(TSOP1) except package type.
GENERAL DESCRIPTION
Offered in 16Mx8bit or 8Mx16bit, the K9F28XXU0C is 128M bit with spare 4M bit capacity. The device is offered in 3.3V Vcc. Its
NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed
in typical 200µs on the 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in typical 2ms
on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns cycle time per word(X8 device) or
word(X16 device). The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write con-
trol automates all program and erase functions including pulse repetition, where required, and internal verification and margining of
data. Even the write-intensive systems can take advantage of the K9F28XXU0C’ extended reliability of 100K program/erase cycles
s
by providing ECC(Error Correcting Code) with real time mapping-out algorithm.
The K9F28XXU0C is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.
3
K9F2808U0C
K9F2816U0C
PIN CONFIGURATION (TSOP1)
K9F28XXU0C-YCB0,PCB0/YIB0,PIB0
X16
N.C
N.C
N.C
N.C
N.C
GND
R/B
RE
CE
N.C
N.C
Vcc
Vss
N.C
N.C
CLE
ALE
WE
WP
N.C
N.C
N.C
N.C
N.C
FLASH MEMORY
X8
N.C
N.C
N.C
N.C
N.C
GND
R/B
RE
CE
N.C
N.C
Vcc
Vss
N.C
N.C
CLE
ALE
WE
WP
N.C
N.C
N.C
N.C
N.C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
X8
N.C
N.C
N.C
N.C
I/O7
I/O6
I/O5
I/O4
N.C
N.C
N.C
Vcc
Vss
N.C
N.C
N.C
I/O3
I/O2
I/O1
I/O0
N.C
N.C
N.C
N.C
X16
Vss
I/O15
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
N.C
N.C
Vcc
N.C
N.C
N.C
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
Vss
PACKAGE DIMENSIONS
48-PIN LEAD/LEAD FREE PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(I)
48 - TSOP1 - 1220F
Unit :mm/Inch
0.10
MAX
0.004
#48
( 0.25 )
0.010
12.40
0.488 MAX
#24
#25
1.00
±0.05
0.039
±0.002
0.25
0.010 TYP
18.40
±0.10
0.724
±0.004
+0.075
20.00
±0.20
0.787
±0.008
0.20
-0.03
+0.07
#1
0.008
-0.001
0.16
-0.03
+0.07
+0.003
0.50
0.0197
12.00
0.472
0.05
0.002 MIN
0.125
0.035
0~8°
0.45~0.75
0.018~0.030
( 0.50 )
0.020
4
0.005
-0.001
+0.003
1.20
0.047MAX
K9F2808U0C
K9F2816U0C
PIN CONFIGURATION (WSOP1)
K9F2808U0C-VCB0,FCB0/VIB0,FIB0
N.C
N.C
DNU
N.C
N.C
N.C
R/B
RE
CE
DNU
N.C
Vcc
Vss
N.C
DNU
CLE
ALE
WE
WP
N.C
N.C
DNU
N.C
N.C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
N.C
N.C
DNU
N.C
I/O7
I/O6
I/O5
I/O4
N.C
DNU
N.C
Vcc
Vss
N.C
DNU
N.C
I/O3
I/O2
I/O1
I/O0
N.C
DNU
N.C
N.C
FLASH MEMORY
PACKAGE DIMENSIONS
48-PIN LEAD PLASTIC VERY VERY THIN SMALL OUT-LINE PACKAGE TYPE (I)
48 - WSOP1 - 1217F
Unit :mm
0.70 MAX
15.40
±0.10
0.58
±0.04
#1
+0.07
-0.03
#48
+0.07
-0.03
0.16
12.40MAX
12.00
±0.10
0.50TYP
(0.50
±
0.06)
0.20
#24
#25
(0.01Min)
0.10
+0.075
-0.035
8
°
0
°
~
0.45~0.75
17.00
±0.20
5
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