Date:- 1
st
August, 2015
Data Sheet Issue:- P1
Medium Voltage Thyristor
Types K1670HA600 and K1670HA650
Absolute Maximum Ratings
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
6000-6500
6000-6500
6000-6500
6100-6600
UNITS
V
V
V
V
OTHER RATINGS
I
T(AV)
I
T(AV)
I
T(AV)
I
T(RMS)
I
T(d.c.)
I
TSM
I
TSM2
I
2
t
I
2
t
di
T
/dt
V
RGM
P
G(AV)
P
GM
V
GD
T
HS
T
stg
Mean on-state current. T
sink
=55°C, (note 2)
Mean on-state current. T
sink
=85°C, (note 2)
Mean on-state current. T
sink
=85°C, (note 3)
Nominal RMS on-state current. T
sink
=25°C, (note 2)
D.C. on-state current. T
sink
=25°C, (note 4)
Peak non-repetitive surge t
p
=10ms, V
RM
=0.6V
RRM
, (note 5)
Peak non-repetitive surge t
p
=10ms, V
RM
10V,
(note 5)
I
2
t capacity for fusing t
p
=10ms, V
RM
=0.6V
RRM
, (note 5)
I
2
t capacity for fusing t
p
=10ms, V
RM
10V,
(note 5)
Maximum rate of rise of on-state current (repetitive), (Note 6)
Maximum rate of rise of on-state current (non-repetitive), (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Non-trigger gate voltage, (Note 7)
Operating temperature range
Storage temperature range
MAXIMUM
LIMITS
1670
1170
835
3255
2920
21.8
23.9
2.38×10
6
2.86×10
6
200
1000
5
3
40
0.25
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
kA
kA
A
2
s
A
2
s
A/µs
A/µs
V
W
W
V
°C
°C
Notes: -
1)
De-rating factor of 0.13% per °C is applicable for T
j
below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Cathode side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 125°C T
j
initial.
6)
V
D
=67% V
DRM
, I
TM
=3300A, I
FG
=2A, t
r
0.5µs,
T
case
=125°C.
7)
Rated V
DRM
.
Data Sheet. Types K1670HA600 and K1670HA650 Issue P1.
Page 1 of 10
August, 2015
Medium Voltage Thyristor Types K1670HA600 and K1670HA650
Characteristics
PARAMETER
V
TM
V
T0
r
T
Maximum peak on-state voltage
Threshold voltage
Slope resistance
MIN.
-
-
-
1000
-
-
-
-
-
-
-
-
-
-
-
850
TYP.
-
-
-
-
-
-
-
-
-
1.0
5.8
9000
3550
165
43
-
MAX. TEST CONDITIONS
(Note 1)
2.40
1.496
0.606
-
200
200
3.0
300
1000
2.0
8.0
9900
-
175
-
1100
I
TM
=1500A, t
p
=1000µs, di/dt=10A/µs,
V
r
=100V, V
dr
=80%V
DRM
, dV
dr
/dt=20V/µs
(Note 2)
I
TM
=1500A, t
p
=1000µs, di/dt=10A/µs,
V
r
=100V, V
dr
=80%V
DRM
, dV
dr
/dt=200V/µs
(Note 2)
I
TM
=1500A, t
p
=1000µs, di/dt=10A/µs,
V
r
=100V
V
D
=80% V
DRM
, Linear ramp, gate o/c
Rated V
DRM
Rated V
RRM
T
j
=25°C, V
D
=10V, I
T
=3A
T
j
=25°C
I
FG
=2A, t
r
=0.5µs, V
D
=67%V
DRM
,
I
TM
=1700A, di/dt=10A/µs, T
j
=25°C
I
TM
=1500A
UNITS
V
V
m
V/s
mA
mA
V
mA
mA
µs
µC
µC
A
µs
dv/dt Critical rate of rise of off-state voltage
I
DRM
I
RRM
V
GT
I
GT
I
H
t
gd
t
gt
Q
rr
Q
ra
I
rm
t
rr
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Holding current
Gate controlled turn-on delay time
Turn-on time
Recovered Charge
Recovered Charge, 50% chord
Reverse recovery current
Reverse recovery time, 50% chord
t
q
Turn-off time
1200
-
-
-
-
-
-
890
1500
µs
0.0105 Double side cooled
0.0272 Cathode side cooled
0.0175 Anode side cooled
40
-
(Note 3)
K/W
K/W
K/W
kN
g
R
thJK
Thermal resistance, junction to
heatsink
Mounting force
Weight
-
-
F
W
t
32
-
Notes: -
1) Unless otherwise stated T
j
=125°C.
2) Standard test condition for tq dV
dr
/dt=20V/µs. For other dV
dr
/dt values please consult factory.
3) For other clamp forces please consult factory.
Data Sheet. Types K1670HA600 and K1670HA650 Issue P1.
Page 2 of 10
August, 2015
Medium Voltage Thyristor Types K1670HA600 and K1670HA650
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
60
65
V
DRM
V
DSM
V
RRM
V
6000
6500
V
RSM
V
6100
6600
V
D
V
R
DC V
3320
3600
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T
j
below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Computer Modelling Parameters
5.1 Device Dissipation Calculations
I
AV
V
0
V
0
4
ff
r
s
W
AV
½
2
ff
r
s
W
AV
½
and:
T
R
th
T
½
T
j max
T
Hs
Where V
T0
=1.496V, r
T
=0.606m
R
th
= Supplementary thermal impedance, see table below.
ff
= Form factor, see table below.
Supplementary Thermal Impedance
Conduction Angle
Square wave Double Side Cooled
Square wave Anode Side Cooled
Square wave Cathode Side Cooled
Sine wave Double Side Cooled
Sine wave Anode Side Cooled
Sine wave Cathode Side Cooled
30°
0.0178
0.0187
0.0284
0.0116
0.0186
0.0283
60°
0.0116
0.0185
0.0283
0.0114
0.0184
0.0281
90°
0.0114
0.0184
0.0281
0.0113
0.0183
0.0280
120°
0.0113
0.0183
0.0280
0.0111
0.0181
0.0279
180°
0.0111
0.0181
0.0278
0.0107
0.0178
0.0275
270°
0.0107
0.0178
0.0275
d.c.
0.0105
0.0175
0.0272
Conduction Angle
Square wave
Sine wave
30°
3.46
3.98
Form Factors
60°
90°
2.45
2
2.78
2.22
120°
1.73
1.88
180°
1.41
1.57
270°
1.15
d.c.
1
Data Sheet. Types K1670HA600 and K1670HA650 Issue P1.
Page 3 of 10
August, 2015
Medium Voltage Thyristor Types K1670HA600 and K1670HA650
5.2 Calculating V
T
using ABCD Coefficients
The on-state characteristic I
T
vs. V
T
, on page 5 is represented in two ways;
(i)
the well established V
o
and r
s
tangent used for rating purposes and
(ii)
a set of constants A, B, C, D, forming the coefficients of the representative equation for V
T
in
terms of I
T
given below:
V
T
½
A
B
ln
I
T
C
I
T
D
I
T
The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The
resulting values for V
T
agree with the true device characteristic over a current range, which is limited to
that plotted.
25°C Coefficients
A
B
C
D
1.493364931
0.3085604
6.95051×10
-4
-0.05357941
A
B
C
D
125°C Coefficients
2.433351931
-0.2504477
4.17184×10
-4
0.03027257
5.3 D.C. Thermal Impedance Calculation
t
r
t
½
r
p
1
e
p
p
½
1
p
½
n
Where
p = 1
to
n, n
is the number of terms in the series and:
t
r
t
r
p
p
Term
=
=
=
=
Duration of heating pulse in seconds.
Thermal resistance at time t.
Amplitude of p
th
term.
Time Constant of r
th
term.
D.C. Double Side Cooled
1
5.256470×10
-3
0.8751027
2
2.273835×10
-3
0.2971197
3
2.490946×10
-3
0.07823192
4
4.976157×10
-4
7.166327×10
-3
r
p
p
D.C. Anode Side Cooled
Term
1
9.699639×10
-3
5.886331
2
4.158251×10
-3
0.4894769
3
2.826510×10
-3
0.1049519
4
8.413660×10
-4
0.01154035
r
p
p
D.C. Cathode Side Cooled
Term
1
0.02176617
5.037093
2
4.445979×10
-3
0.1622964
3
1.050424×10
-3
0.01320346
r
p
p
Data Sheet. Types K1670HA600 and K1670HA650 Issue P1.
Page 4 of 10
August, 2015
Medium Voltage Thyristor Types K1670HA600 and K1670HA650
Curves
Figure 1 - On-state characteristics of Limit device
Figure 2 - Transient Thermal Impedance
Figure 3 - Gate Characteristics - Trigger Limits
Figure 4 - Gate Characteristics - Power Curves
Data Sheet. Types K1670HA600 and K1670HA650 Issue P1.
Page 5 of 10
August, 2015
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