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2N6573

Description
Power Bipolar Transistor, 10A I(C), NPN
CategoryDiscrete semiconductor    The transistor   
File Size157KB,1 Pages
ManufacturerSemiconductor Technology Inc
Download Datasheet Parametric View All

2N6573 Overview

Power Bipolar Transistor, 10A I(C), NPN

2N6573 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codecompliant
Maximum collector current (IC)10 A
ConfigurationSingle
Minimum DC current gain (hFE)7
Maximum operating temperature175 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)125 W
surface mountNO
Nominal transition frequency (fT)5 MHz
Base Number Matches1
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