MT16HTS25664HY-667A1 datasheet, PDF

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MT16HTS25664HY-667A1: Descriptionmodule ddr2 2gb 200sodimm; Categorystorage; File Size278KB，16 Pages; ManufacturerMicron; Websitehttp://www.micron.com/; Environmental Compliance

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MT16HTS25664HY-667A1 Overview

module ddr2 2gb 200sodimm

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2GB: (x64, DR) 200-Pin DDR2 SDRAM SODIMM

Features

DDR2 SDRAM SODIMM

MT16HTS25664H – 2GB

For component specifications, refer to Micron’s Web site:

www.micron.com/products/ddr2sdram

Features

• 200-pin, small outline, dual in-line memory module

(SODIMM)

• Fast data transfer rates: PC2-3200, PC2-4200, or PC2-

5300

• 2GB (256 Meg x 64)

• V

= V

Q = +1.8V

• V

DDSPD

= +1.7V to +3.6V

• JEDEC standard 1.8V I/O (SSTL_18-compatible)

• Differential data strobe (DQS, DQS#) option

• Four-bit prefetch architecture

• DLL to align DQ and DQS transitions with CK

• Multiple internal device banks for concurrent

operation

• Programmable CAS latency (CL)

• Posted CAS additive latency (AL)

• WRITE latency = READ latency - 1

• Programmable burst lengths: 4 or 8

• Adjustable data-output drive strength

• 64ms, 8,192-cycle refresh

• On-die termination (ODT)

• Serial presence detect (SPD) with EEPROM

• Gold edge contacts

• Dual rank

Figure 1:

200-pin SODIMM (MO-224 R/C “B”)

Options

• Package

–

200-pin SODIMM (lead-free)

• Frequency/CAS latency

–

3ns @ CL = 5 (DDR2-667)

–

3.75ns @ CL = 4 (DDR2-533)

–

5.0ns @ CL = 3 (DDR2-400)

• PCB height

–

1.18in (29.97mm)

Marking

-667

-53E

-40E

Notes: 1. CL = CAS (READ) Latency.

2. Contact Micron for product availability.

PDF: 09005aef821e5bf3/Source: 09005aef82198d54

HTS16C256x64H.fm - Rev. A 4/06 EN

Micron Technology, Inc., reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

MT16HTS25664HY-667A1 Related Products

	MT16HTS25664HY-667A1	MT16HTS25664HY-53EA1
Description	module ddr2 2gb 200sodimm	module ddr2 2gb 200sodimm

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