0402YK110F4STR datasheet, PDF - EEWORLD Datasheet

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0402YK110F4STR: DescriptionFilm Capacitor, Silicon Dioxide And Oxynitride, 16V, 1% +Tol, 1% -Tol, 60ppm/Cel TC, 0.000011uF, Surface Mount, 0402, CHIP; CategoryPassive components capacitor; File Size1MB，18 Pages; ManufacturerAVX

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0402YK110F4STR Overview

Film Capacitor, Silicon Dioxide And Oxynitride, 16V, 1% +Tol, 1% -Tol, 60ppm/Cel TC, 0.000011uF, Surface Mount, 0402, CHIP

0402YK110F4STR Parametric

Parameter Name	Attribute value
Objectid	145071025957
package instruction	, 0402
Reach Compliance Code	compliant
ECCN code	EAR99
YTEOL	6.5
Other features	ESR IS MEASURED AT 2400MHZ, PACKING METHOD : TR, 7 INCH : 5000
capacitance	0.000011 µF
Capacitor type	FILM CAPACITOR
dielectric materials	SILICON DIOXIDE AND OXYNITRIDE
ESR	49 mΩ
high	0.4 mm
length	1 mm
Installation features	SURFACE MOUNT
multi-layer	No
negative tolerance	1%
Number of terminals	2
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
Package form	SMT
method of packing	TR, 13 INCH
positive tolerance	1%
Rated (DC) voltage (URdc)	16 V
size code	0402
surface mount	YES
Temperature Coefficient	60ppm/Cel ppm/°C
Terminal shape	WRAPAROUND
width	0.55 mm

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Automotive Grade Accu-P

Thin-Film Technology

THE IDEAL CAPACITOR

The non-ideal characteristics of a real capacitor can be

ignored at low frequencies. Physical size imparts inductance

to the capacitor and dielectric and metal electrodes result in

resistive losses, but these often are of negligible effect on the

circuit. At the very high frequencies of radio communication

(>100MHz) and satellite systems (>1GHz), these effects

become important. Recognizing that a real capacitor will

exhibit inductive and resistive impedances in addition to

capacitance, the ideal capacitor for these high frequencies is

an ultra low loss component which can be fully characterized

in all parameters with total repeatability from unit to unit.

Until recently, most high frequency/microwave capacitors

were based on fired-ceramic (porcelain) technology. Layers

of ceramic dielectric material and metal alloy electrode paste

are interleaved and then sintered in a high temperature oven.

This technology exhibits component variability in dielectric

quality (losses, dielectric constant and insulation resistance),

variability in electrode conductivity and variability in physical

size (affecting inductance). An alternate thin-film technology

has been developed which virtually eliminates these vari-

ances. It is this technology which has been fully incorporated

into Accu-P

and Accu-P

to provide high frequency capaci-

tors exhibiting truly ideal characteristics.

The main features of Accu-P

may be summarized as follows:

• High purity of electrodes for very low and repeatable

ESR.

• Highly pure, low-K dielectric for high breakdown field,

high insulation resistance and low losses to frequencies

above 40GHz.

• Very tight dimensional control for uniform inductance,

unit to unit.

• Very tight capacitance tolerances for high frequency

signal applications.

This accuracy sets apart these Thin-Film capacitors from

ceramic capacitors so that the term Accu has been

employed as the designation for this series of devices, an

abbreviation for “accurate.”

THIN-FILM TECHNOLOGY

Thin-film technology is commonly used in producing semi-

conductor devices. In the last two decades, this technology

has developed tremendously, both in performance and in

process control. Today’s techniques enable line definitions of

below 1μm, and the controlling of thickness of layers at 100Å

(10

-2

μm). Applying this technology to the manufacture of

capacitors has enabled the development of components

where both electrical and physical properties can be tightly

controlled.

The thin-film production facilities at AVX consist of:

• Class 1000 clean rooms, with working areas under

laminar-flow hoods of class 100, (below 100 particles

per cubic foot larger than 0.5μm).

• High vacuum metal deposition systems for high-purity

electrode construction.

• Photolithography equipment for line definition down to

2.0μm accuracy.

• Plasma-enhanced CVD for various dielectric deposi-

tions (CVD=Chemical Vapor Deposition).

• High accuracy, microprocessor-controlled dicing saws

for chip separation.

• High speed, high accuracy sorting to ensure strict

tolerance adherence.

Orientation Marking

Alumina (Al

)

Seal

(SiNO)

Dielectric (SiO

/ SiNO)

Electrode

Alumina (Al

)

Terminations

ACCU-P

CAPACITOR STRUCTURE

011717

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