KSP12
KSP12
Darlington Transistor
• Collector-Emitter Voltage: V
CES
=20V
• Collector Power Dissipation: P
C
(max)=625mW
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CES
V
EBO
P
C
T
J
T
STG
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
20
10
625
150
-55 ~ 150
Units
V
V
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CES
I
CBO
I
CES
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
Parameter
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Test Condition
I
C
=100µA, I
B
=0
V
CB
=15V, I
E
=0
V
CE
=15V, I
B
=0
V
EC
=10V, I
C
=0
V
CE
=5V, I
C
=10mA
I
C
=10mA, I
B
=0.01mA
V
CE
=5V, I
C
=10mA
20K
1
1.4
V
V
Min.
20
Typ.
.
Max.
100
100
100
Units
V
nA
nA
nA
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSP12
Typical Characteristics
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
1M
10
V
CE
= 5V
I
C
= 1000 I
B
h
FE
, DC CURRENT GAIN
100k
V
BE
(sat)
1
V
CE
(sat)
10k
1k
1
10
100
1000
0.1
10
100
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
f
T
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
1000
V
CE
= 5V
100
V
CE
= 5V
I
C
[mA], COLLECTOR CURRENT
100
10
1
0.0
0.4
0.8
1.2
1.6
2.0
2.4
10
1
10
100
V
BE
[V], BASE-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter On Voltage
Figure 4. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1
stm32/stm8
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