Please note that for reliable operation, the evaluation board will have to be mounted to a much
larger heat sink during operation and in laboratory environments to dissipate the power
consumed by the device. The use of a convection fan is also recommended in laboratory
environments.
2.
The area around the module underneath the PCB should not contain any soldermask in order to
maintain good RF grounding.
3.
For proper and safe operation in the laboratory, the power-on sequencing is recommended.
Evaluation Board Bias Procedure
Following bias procedure is recommended to ensure proper functionality of AP561 in a laboratory environment. The sequencing is not
required in the final system application.
Bias.
Vcc
Vpd
Voltage (V)
+12
+5
Turn-on Sequence:
1.
2.
3.
4.
1.
2.
3.
Attach input and output loads onto the evaluation board.
Turn on power supply Vcc = +12V.
Turn on power supply Vpd = +5V.
Turn on RF power.
Turn off RF power.
Turn off power supply Vpd = +5V.
Turn off power supply Vcc = +12V.
Turn-off Sequence:
Specifications and information are subject to change without notice
TriQuint Semiconductor Inc
•
Phone +1-503-615-9000
•
FAX: +1-503-615-8900
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
Page 2 of 15 April 2010
AP561
40
0.7-2.9 GHz 8W Power Amplifier
S-Parameters (V
CC
= +12 V, I
CC
= 300 mA, 25
°C,
unmatched 50 ohm system)
S(1,1)
AP561
Typical Device Data
S11
1.0
6
0.
0.8
0
6
0.
Swp Max
6GHz
2.
0.8
1.0
Gain / Maximum Stable Gain
S22
S(2,2)
AP561
Swp Max
6GHz
2.
0
0
3.
0
3.
20
Gain (dB)
0.2
0
4.
5.0
0.2
10.0
10.0
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
0
0
-20
2
-0.
-40
0
2
Frequency (GHz)
4
6
-0
.4
.4
-0
.0
-2
-0
.6
-0.8
-0
.6
Swp Min
0.05GHz
-0.8
-2
.0
Swp Min
0.05GHz
-1.0
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that
actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the red line.
S-Parameters (V
CC
= +12 V, I
CQ
= 300 mA, 25
°C,
unmatched 50 ohm system, calibrated to device leads)
Freq (MHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
50
100
300
500
700
900
1100
1300
1500
1700
1900
2100
2300
2500
2700
2900
3100
3300
3500
3700
3900
4100
4300
4500
-0.83
-0.43
-0.35
-0.32
-0.34
-0.40
-0.47
-0.53
-0.59
-0.87
-1.14
-1.58
-2.07
-2.11
-1.52
-0.93
-0.60
-0.44
-0.30
-0.20
-0.16
-0.14
-0.15
-0.13
-174.19
-177.42
179.26
177.35
175.28
173.11
170.97
168.26
165.56
161.87
158.99
157.33
158.08
161.67
163.86
162.94
161.26
159.75
157.96
156.27
154.67
152.82
150.80
148.32
27.09
22.26
14.06
9.81
7.08
5.19
3.82
2.80
2.18
2.75
2.84
3.04
3.08
2.27
0.21
-2.57
-5.57
-8.55
-11.15
-13.44
-15.57
-17.53
-19.35
-21.11
122.75
106.35
89.18
79.93
71.64
63.88
55.72
47.12
37.92
25.71
12.58
-4.10
-26.45
-53.16
-79.14
-100.12
-115.90
-127.57
-136.15
-143.55
-150.57
-157.27
-163.61
-170.25
-43.35
-43.10
-41.21
-40.63
-40.35
-40.26
-40.09
-39.83
-39.58
-38.56
-37.79
-37.20
-36.71
-36.83
-37.65
-38.71
-39.66
-40.18
-40.26
-40.26
-39.83
-39.91
-39.49
-39.09
29.12
8.71
1.08
0.69
3.54
-3.79
-9.55
-16.44
-23.59
-35.47
-49.59
-69.96
-98.60
-134.34
-170.26
157.51
133.27
115.97
102.36
94.11
85.11
78.44
72.37
66.71
-1.38
-1.82
-2.02
-2.10
-2.09
-1.99
-1.86
-1.78
-1.68
-1.67
-1.45
-1.07
-0.57
-0.20
-0.18
-0.38
-0.55
-0.68
-0.77
-0.84
-0.87
-0.87
-0.86
-0.89
-1.0
-106.01
-138.64
-164.78
-172.01
-176.13
-177.89
-178.93
-179.77
179.34
177.40
176.17
174.50
171.36
166.20
160.52
155.92
152.79
150.56
148.63
147.06
145.70
144.40
143.38
142.13
Device S-parameters are available for download off of the website at: http://www.tqs.com
Specifications and information are subject to change without notice
TriQuint Semiconductor Inc
•
Phone +1-503-615-9000
•
FAX: +1-503-615-8900
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
Page 3 of 15 April 2010
-4
.0
DB(GMax())
AP561
DB(|S(2,1)|)
AP561
.0
-5.
0
2
-0.
-10.0
-3
.0
0.
4
-10.0
-4
.0
-5.
0
-3
0.
4
4.
0
5.0
10.0
AP561
Frequency (MHz)
Channel Power
Power Gain
Input Return Loss
Output Return Loss
EVM
ACLR
Operating Current, Icc
Collector Efficiency
Output P1dB
Quiescent Current Icq
Reference Current Iref
Vpd
Vcc
0.7-2.9 GHz 8W Power Amplifier
776-787 MHz Reference Design
Typical O-FDMA Performance at 25°C
776 780
+28 +28
16.1 16.2
11
12
11
11
0.68 0.64
-51 -51
405 404
13
13
37.8 37.9
300
10
+5
+12
787 Units
+28 dBm
16.2
dB
13
dB
11
dB
0.57
%
-52
dBc
402
mA
12.9
%
38
dBm
mA
mA
V
V
Notes:
1.
The primary RF microstrip line is 50
Ω.
2.
Do not exceed 5.5V on Vpd or damage to D1 will occur.
3.
Do not exceed 13V on Vcc or damage to D2 will occur.
4.
Components shown on the silkscreen but not on the schematic are not used.
5.
The edge of C26 is placed at 35mil from edge of AP561. (1.2
o
@ 780 MHz)
6.
The edge of L1 is placed 60mil from the edge of C26. (2
o
@ 780 MHz)
7.
The edge of C27 is placed next to the edge of L1.
8.
The edge of C20 is placed 380mil from the edge of C27. (12.9
o
@ 780 MHz)
9.
The edge of R5 is placed at 115mil from edge of AP561. (3.9
o
@ 780 MHz)
10. The edge of C28 is placed 230mil from the edge of R5. (7.8
o
@ 780 MHz)
11. The edge of C1 is placed 180mil from the edge of C28. (6.1
o
@ 780 MHz)
12. 0
Ω
jumpers can be replaced with copper trace in target application.
776-787 MHz Application Circuit Performance Plots
802.16-2004 O-FDMA, 64QAM-1/2, 1024-FFT, 20 symbols and 30 subchannels. 9.5 dB PAR @ 0.01%, 5 MHz Carrier BW
Gain vs. Frequency
18
T=25°C
Return Loss
0
T=25°C
Efficiency vs Output Average Power vs. Frequency
25
Collector Efficiency (%)
T=25°C
17
-5
20
S11, S22 (dB)
Gain (dB)
16
-10
15
15
-15
10
776 MHz
5
780 MHz
787 MHz
30
31
32
S11
14
0.75
0.77
0.79
0.81
0.83
0.85
S22
0.85
-20
0.75
0.77
Frequency (GHz)
Current vs Output Average Power vs. Frequency
600
Collector Current (mA)
T=25°C
0.79
0.81
Frequency (GHz)
0.83
24
25
26
27
28
29
Output Power (dBm)
EVM vs. Output Average Power vs. Frequency
5
T=25°C
ACLR vs. Output Average Power vs. Frequency
T=25°C
-30
787 MHz
776 MHz
780 MHz
787 MHz
550
500
776 MHz
4
780 MHz
-35
ACLR (dBc)
-40
-45
-50
-55
-60
W-CDMA 3GPP Test Model 1+64
DPCH, no clipping, PAR = 10.2 dB @
0.01% Probability, 3.84 MHz BW
450
400
350
776 MHz
300
24
25
26
27
28
29
Output Power (dBm)
30
31
32
780 MHz
787 MHz
EVM (%)
3
2
1
0
24
25
26
27
28
29
Output Power (dBm)
30
31
32
24
25
26
27
28
29
30
Output Power (dBm)
31
32
Specifications and information are subject to change without notice
TriQuint Semiconductor Inc
•
Phone +1-503-615-9000
•
FAX: +1-503-615-8900
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
Page 4 of 15 April 2010
AP561
Frequency (MHz)
Channel Power
Power Gain
Input Return Loss
Output Return Loss
ACLR
Operating Current, Icc
Collector Efficiency
Output P1dB
Quiescent Current Icq
Reference Current Iref
Vpd
Vcc
0.7-2.9 GHz 8W Power Amplifier
869-894 MHz Reference Design (AP561-PCB900)
Typical W-CDMA Performance at 25°C
869
+28
15.7
14
9.8
-53
475
11
39.1
880
+28
15.8
15
10
-52
470
11.2
39
300
10
+5
+12
894 Units
+28 dBm
15.7
dB
15
dB
11
dB
-52
dBc
460
mA
11.4
%
38.8 dBm
mA
mA
V
V
Notes:
1.
The primary RF microstrip line is 50
Ω.
2.
Do not exceed 5.5V on Vpd or damage to D1 will occur.
3.
Do not exceed 13V on Vcc or damage to D2 will occur.
4.
Components shown on the silkscreen but not on the schematic are not used.
5.
The edge of C26 is placed at 40mil from edge of AP561. (1.5
o
@ 880 MHz)
6.
The edge of L1 is placed 60mil from the edge of C26. (2.3
o
@ 880 MHz)
7.
The edge of C27 is placed 43 mil from the edge of L1. (1.6
o
@ 880 MHz)
8.
The edge of C20 is placed 380mil from the edge of C27. (14.6
o
@ 880 MHz)
9.
The edge of R5 is placed at 105mil from edge of AP561. (4
o
@ 880 MHz)
10. The edge of C28 is placed 200mil from the edge of R5. (7.7
o
@ 880 MHz)
11. 0
Ω
jumpers can be replaced with copper trace in target application.
869-894 MHz Application Circuit Performance Plots
W-CDMA 3GPP Test Model 1+64 DPCH, no clipping, PAR = 10.2 dB @ 0.01% Probability, 3.84 MHz BW
Gain vs. Frequency
18
T=25°C
Return Loss
0
-5
T=25°C
Current vs Output Average Power vs. Frequency
800
Collector Current (mA)
T=25°C
17
700
600
500
400
869 MHz
300
880 MHz
894 MHz
31
32
S11, S22 (dB)
Gain (dB)
-10
-15
-20
-25
16
15
S11
14
0.86
0.87
0.88
0.89
0.90
S22
0.90
-30
0.86
0.87
Frequency (GHz)
ACLR vs. Output Average Power vs. Frequency
-40
-45
T=25°C
0.88
Frequency (GHz)
T=25°C
0.89
24
25
26
27
28
29
30
Output Power (dBm)
T=25°C
Output Average Power vs. Input Average Power
40
39
Output Power (dBm)
Gain vs. Output Average Power
20
19
18
Gain (dB)
38
37
36
35
34
33
32
869 MHz
880 MHz
894 MHz
ACLR (dBc)
-50
-55
-60
-65
869 MHz
-70
24
25
26
27
28
29
Output Power (dBm)
30
31
32
880 MHz
894 MHz
17
16
15
14
13
869 MHz
880 MHz
894 MHz
12
23
24
30
31
32
33 34 35 36 37
Output Power (dBm)
38
39
40
16
17
18
19
20
21
Input Power (dBm)
22
Specifications and information are subject to change without notice
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