R1W V3216R Series
32Mb superSRAM (2M wordx16bit)
REJ03C0215-0100Z
Rev.1.00
2004.4.13
Description
The R1WV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2097152-words by 16-bit,
fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
The R1WV3216R Series is suitable for memory applications where a simple interfacing , battery operating and
battery backup are the important design objectives.
The R1WV3216R Series is made by stacked-micro-package technology and two chips of 16Mbit superSRAMs
are assembled in one package.
The R1WV3216R Series is packaged in a 52pin micro thin small outline mount device[
µ
TSOP / 10.79mm x
10.49mm with the pin-pitch of 0.4mm] or a 48balls fine pitch ball grid array [f-BGA / 7.5mmx8.5mm with the ball-pitch
of 0.75mm and 6x8 array] . It gives the best solution for a compaction of mounting area as well as flexibility of wiring
pattern of printed circuit boards.
Features
• Single 2.7-3.6V power supply
• Small stand-by current:4
µ
A (3.0V, typ.)
• Data retention supply voltage =2.0V
• No clocks, No refresh
• All inputs and outputs are TTL compatible.
• Easy memory expansion by CS1#, CS2, LB# and UB#
• Common Data I/O
• Three-state outputs: OR-tie capability
• OE# prevents data contention on the I/O bus
• Process technology: 0.15um CMOS
Rev.1.00
2004.4.13
page 1 of 16
R1W V3216R Series
Ordering Information
Type No.
R1WV3216RSD-7S%
R1WV3216RSD-8S%
R1WV3216RBG-7S%
R1WV3216RBG-8S%
Access time
70 ns
85 ns
70 ns
7.5mmx8.5mm f-BGA 0.75mm pitch 48ball
85 ns
% - Temperature version; see table below
%
R
W
I
Temperature Range
0 ~ +70 ºC
-20 ~ +85 ºC
-40 ~ +85 ºC
Package
350-mil 52-pin plastic µ - TSOP(II)
(normal-bend type) (52PTG)
Rev.1.00
2004.4.13
page 2 of 16
R1W V3216R Series
Operating Table
CS1#
H
X
X
L
L
L
L
L
L
L
L
L
CS2
X
L
X
H
H
H
H
H
H
H
H
H
BYTE#
X
X
H
H
H
X
H
H
H
H
L
L
LB#
X
X
H
L
L
X
H
H
L
L
L
L
UB#
X
X
H
H
H
X
L
L
L
L
L
L
WE#
X
X
X
L
H
H
L
H
L
H
L
H
OE#
X
X
X
X
L
H
X
L
X
L
X
L
DQ0-7
High-Z
High-Z
High-Z
Din
Dout
High-Z
High-Z
High-Z
Din
Dout
Din
Dout
DQ8-14
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
Din
Dout
Din
Dout
High-Z
High-Z
DQ15
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
Din
Dout
Din
Dout
A-1
A-1
Operation
Stand by
Stand by
Stand by
Write in lower byte
Read from lower byte
Output disable
Write in upper byte
Read from upper byte
Write
Read
Write
Read
Note 1. H:VIH L:VIL X: VIH or VIL
2. BYTE# pin supported by only TSOP type. When apply BYTE# =“L” , please assign LB#=UB#=“L”.
Absolute Maximum Ratings
Parameter
Power supply voltage relative to Vss
Terminal voltage on any pin relation toVss
Power dissipation
Symbol
Vcc
V
T
P
T
R ver.
Value
-0.5 to +4.6
-0.5*
1
to Vcc+0.3*
2
0.7
0 to +70
-20 to +85
-40 to +85
-65 to +150
R ver.
0 to +70
-20 to +85
-40 to +85
Unit
V
V
W
ºC
ºC
ºC
ºC
ºC
ºC
ºC
Operation temperature
Topr
W ver.
I ver.
Storage temperature
Tstg
Storage temperature range under bias
Tbias
W ver.
I ver.
Note 1: -2.0V in case of AC (Pulse width
≤
30ns)
2:Maximum voltage is +4.6V
Rev.1.00
2004.4.13
page 5 of 16
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