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BSV52D87Z

Description
Small Signal Bipolar Transistor, 0.2A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size85KB,7 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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BSV52D87Z Overview

Small Signal Bipolar Transistor, 0.2A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon

BSV52D87Z Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage12 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.225 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)400 MHz
Maximum off time (toff)18 ns
Maximum opening time (tons)12 ns
Base Number Matches1
BSV52
BSV52
C
E
SOT-23
Mark: B2
B
NPN Switching Transistor
This device is designed for high speed saturated switching at
collector currents of 10 mA to 100 mA. Sourced from Process 21.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CES
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
12
20
5.0
200
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Max
*BSV52
225
1.8
556
Units
mW
mW/°C
°C/W
*
Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
1997
Fairchild Semiconductor Corporation

BSV52D87Z Related Products

BSV52D87Z BSV52_D87Z BSV52L99Z BSV52S62Z
Description Small Signal Bipolar Transistor, 0.2A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon transistor npn 12v 200ma sot-23 Small Signal Bipolar Transistor, 0.2A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.2A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon
package instruction SMALL OUTLINE, R-PDSO-G3 - SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compliant - unknown unknown
ECCN code EAR99 - EAR99 EAR99
Maximum collector current (IC) 0.2 A - 0.2 A 0.2 A
Collector-emitter maximum voltage 12 V - 12 V 12 V
Configuration SINGLE - SINGLE SINGLE
Minimum DC current gain (hFE) 25 - 25 25
JESD-30 code R-PDSO-G3 - R-PDSO-G3 R-PDSO-G3
Number of components 1 - 1 1
Number of terminals 3 - 3 3
Maximum operating temperature 150 °C - 150 °C 150 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN - NPN NPN
Certification status Not Qualified - Not Qualified Not Qualified
surface mount YES - YES YES
Terminal form GULL WING - GULL WING GULL WING
Terminal location DUAL - DUAL DUAL
transistor applications SWITCHING - SWITCHING SWITCHING
Transistor component materials SILICON - SILICON SILICON
Nominal transition frequency (fT) 400 MHz - 400 MHz 400 MHz
Maximum off time (toff) 18 ns - 18 ns 18 ns
Maximum opening time (tons) 12 ns - 12 ns 12 ns
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