DISCRETE SEMICONDUCTORS
DATA SHEET
BUT12F; BUT12AF
Silicon diffused power transistors
Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06
1997 Aug 13
Philips Semiconductors
Product specification
Silicon diffused power transistors
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT186 plastic
package.
APPLICATIONS
•
Converters
•
Inverters
•
Switching regulators
•
Motor control systems.
handbook, halfpage
BUT12F; BUT12AF
PINNING
PIN
1
2
3
mb
base
collector
emitter
mounting base; electrically isolated from all pins
DESCRIPTION
handbook, halfpage
2
1
MBB008
3
1 2 3
MBK109
Fig.1 Simplified outline (SOT186) and symbol.
QUICK REFERENCE DATA
SYMBOL
V
CESM
BUT12F
BUT12AF
V
CEO
collector-emitter voltage
BUT12F
BUT12AF
V
CEsat
I
Csat
collector-emitter saturation voltage
collector saturation current
BUT12F
BUT12AF
I
C
I
CM
P
tot
t
f
collector current (DC)
collector current (peak value)
total power dissipation
fall time
see Figs 2 and 4
see Fig.2
T
h
≤
25
°C;
see Fig.3
resistive load; see Figs 11 and 12
6
5
8
20
23
0.8
A
A
A
A
W
µs
see Figs 7 and 9
open base
400
450
1.5
V
V
V
PARAMETER
collector-emitter peak voltage
V
BE
= 0
850
1000
V
V
CONDITIONS
MAX.
UNIT
1997 Aug 13
1
Philips Semiconductors
Product specification
Silicon diffused power transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-h
R
th j-a
Notes
1. Mounted
without
heatsink compound and 30
±5
N force on centre of package.
2. Mounted
with
heatsink compound and 30
±5
N force on centre of package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CESM
PARAMETER
collector-emitter peak voltage
BUT12F
BUT12AF
V
CEO
collector-emitter voltage
BUT12F
BUT12AF
I
Csat
collector saturation current
BUT12F
BUT12AF
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Note
1. Mounted
without
heatsink compound and 30
±5
N force on centre of package.
ISOLATION CHARACTERISTICS
SYMBOL
V
isolM
C
isol
PARAMETER
isolation voltage from all terminals to external heatsink (peak value)
isolation capacitance from collector to external heatsink
collector current (DC)
collector current (peak value)
base current (DC)
base current (peak value)
total power dissipation
storage temperature
junction temperature
T
h
≤
25
°C;
see Fig.3; note 1
see Figs 2 and 4
see Fig.2
open base
V
BE
= 0
CONDITIONS
PARAMETER
thermal resistance from junction to external heatsink note 1
note 2
thermal resistance from junction to ambient
BUT12F; BUT12AF
CONDITIONS
VALUE
5.5
3.9
55
UNIT
K/W
K/W
K/W
MIN.
−
−
−
−
−
−
−
−
−
−
−
−65
−
MAX.
850
1000
400
450
6
5
8
20
4
6
23
+150
150
V
V
V
V
A
A
A
A
A
A
UNIT
W
°C
°C
TYP.
−
−
MAX.
1500
12
V
UNIT
pF
1997 Aug 13
2
Philips Semiconductors
Product specification
Silicon diffused power transistors
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
CEOsust
PARAMETER
CONDITIONS
BUT12F; BUT12AF
MIN.
400
450
TYP.
−
−
−
−
MAX.
−
−
1.5
1.5
UNIT
V
V
V
V
collector-emitter sustaining voltage I
C
= 100 mA; I
Boff
= 0; L = 25 mH;
see Figs 5 and 6
BUT12F
BUT12AF
collector-emitter saturation voltage
BUT12F
BUT12AF
I
C
= 6 A; I
B
= 1.2 A; see
Figs 7 and 9
I
C
= 5 A; I
B
= 1 A; see
Figs 7 and 9
I
C
= 6 A; I
B
= 1.2 A; see Fig.7
I
C
= 5 A; I
B
= 1 A; see Fig.7
V
CE
= V
CESMmax
; V
BE
= 0; note 1
V
CE
= V
CESMmax
; V
BE
= 0;
T
j
= 125
°C;
note 1
V
CEsat
−
−
V
BEsat
base-emitter saturation voltage
BUT12F
BUT12AF
−
−
−
−
−
10
−
−
−
−
−
18
20
1.5
1.5
1
3
10
35
35
V
V
mA
mA
mA
I
CES
collector-emitter cut-off current
I
EBO
h
FE
emitter-base cut-off current
DC current gain
V
EB
= 9 V; I
C
= 0
V
CE
= 5 V; I
C
= 1 A; see Fig.10
V
CE
= 5 V; I
C
= 10 mA; see Fig.10 10
Switching times resistive load
(see Fig.12)
t
on
turn-on time
BUT12F
BUT12AF
t
s
storage time
BUT12F
BUT12AF
t
f
fall time
BUT12F
BUT12AF
Switching times inductive load
(see Fig.14)
t
s
storage time
BUT12F
BUT12AF
t
f
fall time
BUT12F
BUT12AF
Note
1. Measured with a half-sinewave voltage (curve tracer).
1997 Aug 13
3
I
Con
= 6 A; I
Bon
= 1.2 A;
V
CL
= 250 V; T
c
= 100
°C
I
Con
= 5 A; I
Bon
= 1 A;
V
CL
= 300 V; T
c
= 100
°C
−
−
200
200
300
300
ns
ns
I
Con
= 6 A; I
Bon
= 1.2 A;
V
CL
= 250 V; T
c
= 100
°C
I
Con
= 5 A; I
Bon
= 1 A;
V
CL
= 300 V; T
c
= 100
°C
−
−
1.9
1.9
2.5
2.5
µs
µs
I
Con
= 6 A; I
Bon
=
−I
Boff
= 1.2 A
I
Con
= 5 A; I
Bon
=
−I
Boff
= 1 A
−
−
−
−
0.8
0.8
µs
µs
I
Con
= 6 A; I
Bon
=
−I
Boff
= 1.2 A
I
Con
= 5 A; I
Bon
=
−I
Boff
= 1 A
−
−
−
−
4
4
µs
µs
I
Con
= 6 A; I
Bon
=
−I
Boff
= 1.2 A
I
Con
= 5 A; I
Bon
=
−I
Boff
= 1 A
−
−
−
−
1
1
µs
µs
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT12F; BUT12AF
handbook, full pagewidth
10
2
IC
(A)
MGB935
ICM max
IC max
10
II
1
I
10
−1
10
−2
DC
10
−3
BUT12F
BUT12AF
10
−4
1
10
10
2
10
3
VCE (V)
10
4
T
mb
< 25
°C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
Fig.2 Forward bias SOAR.
1997 Aug 13
4
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