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BLF378

Description
vhf push-pull power mos transistor
CategoryDiscrete semiconductor    The transistor   
File Size136KB,16 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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vhf push-pull power mos transistor

BLF378 Parametric

Parameter NameAttribute value
MakerNXP
Parts packaging codeSOT
package instructionFLANGE MOUNT, R-CDFM-F4
Contacts4
Manufacturer packaging codeSOT262A1
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionSOURCE
ConfigurationCOMMON SOURCE, 2 ELEMENTS
Minimum drain-source breakdown voltage110 V
Maximum drain current (ID)18 A
Maximum drain-source on-resistance0.3 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeR-CDFM-F4
Number of components2
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment500 W
Minimum power gain (Gp)14 dB
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D091
BLF378
VHF push-pull power MOS
transistor
Product specification
Supersedes data of 1996 Oct 17
1998 Jul 29
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