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3N163-2

Description
mosfet P-CH 40v 50ma TO-72
CategoryDiscrete semiconductor    The transistor   
File Size58KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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3N163-2 Overview

mosfet P-CH 40v 50ma TO-72

3N163-2 Parametric

Parameter NameAttribute value
MakerVishay
package instructionCYLINDRICAL, O-MBCY-W4
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionSUBSTRATE
ConfigurationSINGLE
Minimum drain-source breakdown voltage40 V
Maximum drain current (ID)0.05 A
Maximum drain-source on-resistance300 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)0.7 pF
JEDEC-95 codeTO-206AF
JESD-30 codeO-MBCY-W4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
Transistor component materialsSILICON
Base Number Matches1
3N163/3N164
P-Channel Enhancement-Mode MOSFET Transistors
Product Summary
Part
Number
3N163
3N164
V
(BR)DSS
Min
(V)
–40
–30
V
GS(th)
(V)
–2 to –5
–2 to –5
r
DS(on)
Max
(W)
250
300
I
D(on)
Min
(mA)
–5
–3
C
rss
Max
(pF)
0.7
0.7
t
ON
Typ
(ns)
18
18
Features
Benefits
Applications
D
Ultra-High Input Impedance Amplifier
D
Ultra-Low Input Leakage: 0.02 pA Typ.
D
High Input Impedance Isolation
D
High Gate Breakdown Voltage:
"125
V
D
Minimize Handling ESD Problems
D
Smoke Detectors
D
High Off Isolation without Power
D
Electrometers
D
Normally Off
D
Analog Switching
D
Digital Switching
Description
The 3N163/164 are lateral p-channel MOSFETs designed
for analog switch and preamplifier applications where
high speed and low parasitic capacitances are required.
The hermetic TO-206AF package is compatible with
military processing per military standards (see Military
information).
TO-206AF
(TO-72)
D
1
4
S
2
G
Top View
3
Case
Substrate
Absolute Maximum Ratings (T
A
= 25_C Unless Otherwise Noted)
Drain Source Voltage
(3N163) . . . . . . . . . . . . . . . . . . . . .
–40
V
(3N164) . . . . . . . . . . . . . . . . . . . . . -30 V
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
"30
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 mA
Lead Temperature (
1
/
16
” from case for 10 seconds) . . . . . . . . . 300_C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . –55 to 150_C
Power Dissipation
a
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375 mW
Notes:
a. Derate 3 mW/_C above 25_C
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70228.
Siliconix
P-37404—Rev. D, 04-Jul-94
1

3N163-2 Related Products

3N163-2 3N164 3N163 3N163-E3
Description mosfet P-CH 40v 50ma TO-72 mosfet 30v 3ma 375mw mosfet 40v 5ma 375mw mosfet 40v 5ma 375mw
Reach Compliance Code unknown unknow unknow unknow
Configuration SINGLE Single Single SINGLE
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 200 °C 200 °C 150 °C
Polarity/channel type P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL
surface mount NO NO NO NO
Base Number Matches 1 1 - 1
Parts packaging code - BCY BCY BCY
Contacts - 8 8 8
Maximum drain current (Abs) (ID) - 0.05 A 0.05 A 0.05 A
Maximum power dissipation(Abs) - 0.375 W 0.375 W 0.375 W
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