BSP315P
SIPMOS
®
Small-Signal-Transistor
Features
•
P-Channel
•
Enhancement mode
Product Summary
Drain source voltage
V
DS
-60
0.8
-1.17
V
Ω
A
•
Avalanche rated
•
Logic Level
•
dv/dt rated
Drain-Source on-state resistance
R
DS(on)
Continuous drain current
I
D
4
Pin 1
Pin2/4
PIN 3
•
Qualified according to AEC Q101
•
Halogenfree according to IEC61249221
G
D
S
2
1
3
VPS05163
Type
BSP315P
Package
PG-SOT223
Tape and Reel Information
H6327:
1000 pcs/reel
Marking
BSP315P
Value
-1.17
-0.94
Packaging
Non dry
Unit
A
Maximum Ratings,at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
I
D
T
A
= 25 °C
T
A
= 70 °C
Pulsed drain current
I
D puls
-4.68
24
0.18
6
kV/µs
T
A
= 25 °C
Avalanche energy, single pulse
E
AS
mJ
I
D
= -1.17 A ,
V
DD
= -25 V,
R
GS
= 25
Ω
Avalanche energy, periodic limited by
T
jmax
Reverse diode dv/dt
E
AR
dv/dt
I
S
= -1.17 A,
V
DS
= -48 V, di/dt = 200 A/µs,
T
jmax
= 150 °C
Gate source voltage
Power dissipation
V
GS
±20
1.8
-55...+150
55/150/56
Class 0
V
W
°C
P
tot
T
A
= 25 °C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T
j ,
T
stg
ESD Class; JESD22-A114-HBM
Rev.1.7
Page 1
2012-11-26
BSP315P
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
(Pin 4)
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
Symbol
min.
Values
typ.
-
max.
25
K/W
K/W
-
-
-
-
115
70
Unit
R
thJS
R
thJA
-
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Static Characteristics
Drain- source breakdown voltage
Symbol
min.
Values
typ.
-
-1.5
max.
-
-2
µA
-
-
-0.1
-10
-10
0.8
0.5
-1
-100
-100
1.4
0.8
nA
Ω
Ω
V
Unit
V
(BR)DSS
V
GS(th)
I
DSS
-60
-1
V
GS
= 0 V,
I
D
= -250 µA
Gate threshold voltage,
V
GS
=
V
DS
I
D
= -160 µA
Zero gate voltage drain current
V
DS
= -60 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= -60 V,
V
GS
= 0 V,
T
j
= 125 °C
Gate-source leakage current
I
GSS
R
DS(on)
R
DS(on)
-
-
-
V
GS
= -20 V,
V
DS
= 0 V
Drain-Source on-state resistance
V
GS
= -4.5 V,
I
D
= -0.89 A
Drain-Source on-state resistance
V
GS
= -10 V,
I
D
= -1.17 A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev.1.7
Page
2
2012-11-26
BSP315P
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
Dynamic Characteristics
Transconductance
typ.
max.
Unit
g
fs
C
iss
C
oss
C
rss
t
d(on)
0.7
-
-
-
-
1.4
130
40
17
24
-
160
50
21
36
S
pF
V
DS
≤2*
I
D
*
R
DS(on)max
,
I
D
= -0.89 A
Input capacitance
V
GS
= 0 V,
V
DS
= -25 V,
f
= 1 MHz
Output capacitance
V
GS
= 0 V,
V
DS
= -25 V,
f
= 1 MHz
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= -25 V,
f
= 1 MHz
Turn-on delay time
ns
V
DD
= -30 V,
V
GS
= -4.5 V,
I
D
= -0.89 A,
R
G
= 18
Ω
Rise time
t
r
-
9
14
V
DD
= -30 V,
V
GS
= -4.5 V,
I
D
= -0.89 A,
R
G
= 18
Ω
Turn-off delay time
t
d(off)
-
32
48
V
DD
= -30 V,
V
GS
= -4.5 V,
I
D
= -0.89 A,
R
G
= 18
Ω
Fall time
t
f
-
19
28
V
DD
= -30 V,
V
GS
= -4.5 V,
I
D
= -0.89 A,
R
G
= 18
Ω
Rev.1.7
Page
3
2012-11-26
BSP315P
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
Dynamic Characteristics
Gate to source charge
typ.
max.
Unit
Q
gs
Q
gd
Q
g
V
(plateau)
-
-
-
-
0.7
1.8
5.2
-3.14
1.1
2.6
7.8
-
nC
V
DD
= -48 V,
I
D
= -1.17 A
Gate to drain charge
V
DD
= -48 V,
I
D
= -1.17 A
Gate charge total
V
DD
= -48 V,
I
D
= -1.17 A,
V
GS
= 0 to -10 V
Gate plateau voltage
V
V
DD
= -48 V,
I
D
= -1.17 A
Parameter
Reverse Diode
Inverse diode continuous forward current
Symbol
min.
Values
typ.
-
-
-0.97
30.5
36
max.
-1.17
-4.68
-1.3
46
54
Unit
I
S
I
SM
V
SD
t
rr
Q
rr
-
-
-
-
-
A
T
A
= 25 °C
Inverse diode direct current,pulsed
T
A
= 25 °C
Inverse diode forward voltage
V
ns
µC
V
GS
= 0 V,
I
F
= -1.17 A
Reverse recovery time
V
R
= -30 V,
I
F
=
I
S
, di
F
/dt = 100 A/µs
Reverse recovery charge
V
R
= -30 V,
I
F=
l
S
, di
F
/dt = 100 A/µs
Rev.1.7
Page
4
2012-11-26
BSP315P
Power Dissipation
Drain current
P
tot
=
f
(T
A
)
BSP 315 P
I
D
=
f(T
A
)
parameter :V
GS
≥ −10V
BSP 315 P
1.9
-1.3
W
1.6
1.4
A
-1.1
-1.0
-0.9
P
tot
I
D
°C
1.2
1.0
0.8
-0.8
-0.7
-0.6
-0.5
0.6
0.4
0.2
0.0
0
-0.4
-0.3
-0.2
-0.1
20
40
60
80
100
120
160
0.0
0
20
40
60
80
100
120
°C
160
T
A
T
A
Safe operating area
Transient thermal impedance
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
A
= 25 °C
-10
1
BSP 315 P
tp
= 280.0µs
Z
thJC
=
f
(t
p
)
parameter :
D
=
t
p
/T
10
2
BSP 315 P
K/W
A
1 ms
DS
/I
10
1
D
-10
0
DS
(
R
10 ms
Z
thJC
10
0
D = 0.50
0.20
I
D
-10
-1
10
-1
single pulse
DC
on
)
=
V
0.10
0.05
0.02
0.01
-10
-2 -1
-10
-10
0
-10
1
V
-10
2
10
-2 -5
-4
-3
-2
-1
0
1
2
10 10 10 10 10 10 10 10
s
10
4
V
DS
Rev.1.7
Page
5
t
p
2012-11-26
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